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PDF 2N4403 Data sheet ( 特性 )

部品番号 2N4403
部品説明 Si-Epitaxial PlanarTransistors
メーカ Diotec Semiconductor
ロゴ Diotec Semiconductor ロゴ 

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2N4403 Datasheet, 2N4403 PDF,ピン配置, 機能
2N4402, 2N4403
PNP
Version 2004-01-20
Standard Pinning
1=C 2=B 3=E
General Purpose Transistors
Si-Epitaxial PlanarTransistors
PNP
Power dissipation – Verlustleistung
Plastic case
Kunststoffgehäuse
Weight approx. – Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped in ammo pack
Standard Lieferform gegurtet in Ammo-Pack
625 mW
TO-92
(10D3)
0.18 g
Maximum ratings (TA = 25°C)
Collector-Emitter-voltage
B open
Collector-Base-voltage
E open
Emitter-Base-voltage
C open
Power dissipation – Verlustleistung
Collector current – Kollektorstrom (dc)
Junction temp. – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
- VCE0
- VCE0
- VEB0
Ptot
- IC
Tj
TS
Grenzwerte (TA = 25°C)
2N4402, 2N4403
40 V
40 V
5V
625 mW 1)
600 mA
150°C
- 55…+ 150°C
Characteristics (Tj = 25°C)
Collector saturation volt. – Kollektor-Sättigungsspannung
- IC = 150 mA, - IB = 15 mA
- IC = 500 mA, - IB = 50 mA
- VCEsat
- VCEsat
Base saturation voltage – Basis-Sättigungsspannung
- IC = 150 mA, - IB = 15 mA
- IC = 500 mA, - IB = 50 mA
- VBEsat
- VBEsat
Collector cutoff current – Kollektorreststrom
- VCE = 35 V, - VEB = 0.4 V
- ICBV
Emitter cutoff current – Emitterreststrom
- VCE = 35 V, - VEB = 0.4 V
- IEBV
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
– – 400 mV
– – 750 mV
750 mV – 950 mV
– – 1.3 V
– – 100 nA
– – 100 nA
1) Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig, wenn die Anschlußdrähte in 2 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden
36

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