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UPD5902T7KのメーカーはRenesasです、この部品の機能は「CMOS Integrated Circuits High Power SPDT Switch」です。 |
部品番号 | UPD5902T7K |
| |
部品説明 | CMOS Integrated Circuits High Power SPDT Switch | ||
メーカ | Renesas | ||
ロゴ | |||
このページの下部にプレビューとUPD5902T7Kダウンロード(pdfファイル)リンクがあります。 Total 14 pages
Preliminary Data Sheet
μPD5902T7K
CMOS Integrated Circuits High Power SPDT Switch
R09DS0046EJ0200
Rev.2.00
Nov 19, 2012
DESCRIPTION
The μPD5902T7K is a CMOS MMIC SPDT (Single Pole Double Throw) switch for GSM and UMTS/LTE main
Antenna switching and other High Power RF switching applications up to +35 dBm.
This device can operate frequency from 0.05 to 6.0 GHz, having low insertion loss and high isolation.
This device is housed in a 12-pin plastic QFN (Quad Flat Non-Leaded) (T7K) package.
FEATURES
• Low control voltage
: Vcont = 1.3 V MIN., VDD = 2.3 V MIN.
• Low insertion loss
: Lins = 0.35/0.40 dB TYP. @ f = 1.0/2.0 GHz
• High isolation
: ISL = 45/37 dB TYP. @ f = 1.0/2.0 GHz
• High Handling power
: Pin (0.1dB) = +38 dBm TYP. @f = 0.9/2.0 GHz
• High-density surface mounting : 12-pin plastic QFN (T7K) package (2.0 × 2.0 × 0.6 mm)
• No DC blocking capacitors required.
APPLICATIONS
• GSM and UMTS/LTE main Antenna switching etc.
• Other RF switching Applications.
• Antenna tuning Applications.
ORDERING INFORMATION
Part Number
Order Number
Package Marking
Supplying Form
μPD5902T7K-E2
μPD5902T7K-E2-A
12-pin plastic
QFN (T7K)
(Pb-Free)
5902
• Embossed tape 8 mm wide
• Pin 10, 11 and 12 face the perforation side
of the tape
• Qty 3 kpcs/reel
Remark To order evaluation samples, please contact your nearby sales office.
Part number for sample order: μPD5902T7K-A
CAUTION
Although this device is designed to be as robust as possible, ESD (Electrostatic Discharge) can damage this
device. This device must be protected at all times from ESD. Static charges may easily produce potentials of
several kilovolts on the human body or equipment, which can discharge without detection. Industry-standard
ESD precautions must be employed at all times.
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
R09DS0046EJ0200 Rev.2.00
Nov 19, 2012
Page 1 of 12
Free Datasheet http://www.datasheet4u.com/
1 Page μPD5902T7K
ELECTRICAL CHARACTERISTICS
(TA = +25°C, VDD = 2.5 V, Vcont (H) = 1.8 V, Vcont (L) = 0 V, Z0 = 50 Ω, unless otherwise
specified)
Parameter
Insertion Loss
<R> Isolation
(RFC − RF1,2)
Return Loss
(RFC)
Return Loss
(RF1,2)
0.1 dB Loss
Compression
Input Power
Symbol
Lins1
Lins2
Lins3
Lins4
Lins5
Lins6
ISL1
ISL2
ISL3
ISL4
ISL5
ISL6
RL1
RL2
RL1
RL2
Pin(0.1dB)1
Pin(0.1dB)2
Test Conditions
f = 0.05 to 0.5 GHz, Pin = 0 dBm
f = 0.5 to 1.0 GHz
f = 1.0 to 2.0 GHz
f = 2.0 to 2.7 GHz
f = 2.7 to 3.8 GHz
f = 3.8 to 6.0 GHz
f = 0.05 to 0.5 GHz, Pin = 0 dBm
f = 0.5 to 1.0 GHz
f = 1.0 to 2.0 GHz
f = 2.0 to 2.7 GHz
f = 2.7 to 3.8 GHz
f = 3.8 to 6.0 GHz
f = 0.05 to 3.8 GHz
f = 3.8 to 6.0 GHz
f = 0.05 to 3.8 GHz
f = 3.8 to 6.0 GHz
f = 0.9 GHz
f = 2.0 GHz
MIN.
−
−
−
−
−
−
45
40
32
30
25
−
15
−
15
−
+36.0
+36.0
TYP.
0.30
0.35
0.40
0.45
0.50
0.60
50
45
37
35
30
23
18
15
18
15
+38.0
Note
+38.0
Note
MAX.
0.45
0.50
0.55
0.75
0.80
0.95
−
−
−
−
−
−
−
−
−
−
−
−
Unit
dB
dBm
Harmonics
2f0 f = 0.9 GHz, Pin = +35 dBm
3f0
2f0 f = 2.0 GHz, Pin = +33 dBm
3f0
2nd Order Inter
Modulation
Distortion
3rd Order Inter
Modulation
Distortion
Input 3rd order
Intercept Point
Switch Control
Speed
IMD2
IMD3
IIP3
Tsw
f = 835 MHz, Pin = +20 dBm
f = 45 MHz, Pin = –15 dBm
f = 1 950 MHz, Pin = +20 dBm
f = 190MHz, Pin = –15 dBm
f = 835 MHz, Pin = +20 dBm
f = 790 MHz, Pin = –15 dBm
f = 1 950 MHz, Pin = +20 dBm
f = 1 760 MHz, Pin = –15 dBm
f = 2 500 MHz, Pin = +20 dBm
f = 2 501 MHz, Pin = +20 dBm
50% CTL to 90/10%
Supply Current
IDD Active Mode No RF
Control Current
Icont(H)
Vcont : High No RF
Icont(L)
Vcont : Low No RF
Note: Absolute Maximum Ratings
75 80
70 75
75 85
70 80
−
−
dBc
−
−
− −98 −93
− −105 −100
dBm
− −110 −105
− −110 −105
65 70
− dBm
− 2.0 5.0 μsec
− 130 250
− − 1 μA
−−1
R09DS0046EJ0200 Rev.2.00
Nov 19, 2012
Page 3 of 12
Free Datasheet http://www.datasheet4u.com/
3Pages μPD5902T7K
RFC-RF1/RF2
INSERTION LOSS vs. FREQUENCY
0.00
−0.20
−0.40
−0.60
−0.80
−1.00
−1.20
−1.40
0.0
VDD = 2.5 V VDD = 3.3 V
VDD = 2.3 V
1.0 2.0 3.0 4.0 5.0 6.0
Frequency f (GHz)
RFC
RETURN LOSS vs. FREQUENCY
0
−5
−10
−15
−20 VDD = 2.3 V
−25
−30
−35 VDD = 2.5 V
−40 VDD = 3.3 V
−45
−50
0.0
1.0 2.0 3.0 4.0 5.0 6.0
Frequency f (GHz)
Remark The graphs indicate nominal characteristics.
RFC-RF1/RF2
ISOLATION vs. FREQUENCY
0
−5
−10
−15
−20
−25
−30 VDD = 2.5 V
−35 VDD = 2.3 V
−40
−45
−50
0.0
VDD = 3.3 V
1.0 2.0 3.0 4.0 5.0
Frequency f (GHz)
6.0
RF1/RF2
RETURN LOSS vs. FREQUENCY
0
−5
−10
−15
−20 VDD = 2.3 V
−25
−30
−35 VDD = 2.5 V
−40 VDD = 3.3 V
−45
−50
0.0 1.0 2.0 3.0 4.0 5.0
6.0
Frequency f (GHz)
R09DS0046EJ0200 Rev.2.00
Nov 19, 2012
Page 6 of 12
Free Datasheet http://www.datasheet4u.com/
6 Page | |||
ページ | 合計 : 14 ページ | ||
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部品番号 | 部品説明 | メーカ |
UPD5902T7K | CMOS Integrated Circuits High Power SPDT Switch | Renesas |