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UPD5759T6J の電気的特性と機能

UPD5759T6JのメーカーはRenesasです、この部品の機能は「Low Noise and High Gain Amplifier IC」です。


製品の詳細 ( Datasheet PDF )

部品番号 UPD5759T6J
部品説明 Low Noise and High Gain Amplifier IC
メーカ Renesas
ロゴ Renesas ロゴ 




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UPD5759T6J Datasheet, UPD5759T6J PDF,ピン配置, 機能
μPD5759T6J
Low Noise and High Gain Amplifier IC
for Impedance Converter of Microphone
Preliminary Data Sheet
R09DS0018EJ0100
Rev.1.00
Apr 18, 2011
DESCRIPTION
The μPD5759T6J is a silicon MOS monolithic integrated circuit designed as high gain impedance converter for electret
condenser microphone. This device exhibits low noise and high voltage gain characteristics.
The package is a 3-pin thin-type lead-less minimold, suitable for high-density surface mounting.
FEATURES
Low noise
: NV = 98 dBV TYP. @VDD = 2.0 V, Cin = 3 pF, RL = 2.2 kΩ
: NV = 99 dBV TYP. @VDD = 2.0 V, Cin = 5 pF, RL = 2.2 kΩ
High gain
: GV = +9.0 dB TYP. @VDD = 2.0 V, Cin = 3 pF, RL = 2.2 kΩ
: GV = +11.0 dB TYP. @VDD = 2.0 V, Cin = 5 pF, RL = 2.2 kΩ
Low input capacitance
: Cinput = 2.0 pF TYP. @VDD = 2.0 V, RL = 2.2 kΩ
Low consumption current
: IDD = 310 μA TYP. @VDD = 2.0 V, RL = 2.2 kΩ
High-density surface mounting : 3-pin thin-type lead-less minimold (1.2 × 1.0 × 0.33 mm)
Built-in the capacitor for RF noise immunity
High ESD voltage
APPLICATIONS
Microphone, Sensor etc.
ORDERING INFORMATION
Part Number
Order Number
Package
Marking
μPD5759T6J-E4 μPD5759T6J-E4-A 3-pin thin-type
6Z
lead-less minimold
(Pb-Free)
Remark To order evaluation samples, please contact your nearby sales office.
Part number for sample order: μPD5759T6J
Supplying Form
Embossed tape 8 mm wide
Pin 3 face the perforation side of the tape
Qty 10 kpcs/reel
CAUTION
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
R09DS0018EJ0100 Rev.1.00
Apr 18, 2011
Page 1 of 5
Free Datasheet http://www.datasheet4u.com/

1 Page





UPD5759T6J pdf, ピン配列
μPD5759T6J
TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)
CIRCUIT CURRENT vs. SUPPLY VOLTAGE
600
RL = 2.2 kΩ
VOLTAGE GAIN vs. SUPPLY VOLTAGE
12
500 10
400 8
300 6
200
100
0
0
1234
Supply Voltage VDD (V)
5
VOLTAGE GAIN vs. FREQUENCY
12
4
Cin = 3 pF
2
RL = 2.2 kΩ
Vin = 10 mVrms
f = 1 kHz
0
012 3 45
Supply Voltage VDD (V)
TOTAL HARMONIC DISTORTION
vs. OUTPUT VOLTAGE
10
10
8
61
4
VDD = 2 V
2
Cin = 3 pF
RL = 2.2 kΩ
Vin = 10 mVrms
0
10 100 1 000 10 000 100 000
Frequency f (Hz)
VOLTAGE GAIN vs.
INPUT CAPACITANCE
12
10
8
6
0.1
10
95
VDD = 2 V
Cin = 3 pF
RL = 2.2 kΩ
f = 1 kHz
100 1 000
Output Voltage Vout (mVrms)
OUTPUT NOISE VOLTAGE
vs. INPUT CAPACITANCE
VDD = 2 V
RL = 2.2 kΩ
Vin = 0 Vrms
100
4
VDD = 2 V
2 RL = 2.2 kΩ
Vin = 10 mVrms
f = 1 kHz
0
123 4 56
Input Capacitance Cin (pF)
105
1
23 4 5
Input Capacitance Cin (pF)
6
Remark The graphs indicate nominal characteristics.
R09DS0018EJ0100 Rev.1.00
Apr 18, 2011
Page 3 of 5
Free Datasheet http://www.datasheet4u.com/


3Pages


UPD5759T6J 電子部品, 半導体
Revision History
μPD5759T6J Data Sheet
Rev.
1.00
Date
Apr 18, 2011
Page
First edition issued
Description
Summary
All trademarks and registered trademarks are the property of their respective owners.
C-1
Free Datasheet http://www.datasheet4u.com/

6 Page



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部品番号部品説明メーカ
UPD5759T6J

Low Noise and High Gain Amplifier IC

Renesas
Renesas


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