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UPD5759T6JのメーカーはRenesasです、この部品の機能は「Low Noise and High Gain Amplifier IC」です。 |
部品番号 | UPD5759T6J |
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部品説明 | Low Noise and High Gain Amplifier IC | ||
メーカ | Renesas | ||
ロゴ | |||
このページの下部にプレビューとUPD5759T6Jダウンロード(pdfファイル)リンクがあります。 Total 7 pages
μPD5759T6J
Low Noise and High Gain Amplifier IC
for Impedance Converter of Microphone
Preliminary Data Sheet
R09DS0018EJ0100
Rev.1.00
Apr 18, 2011
DESCRIPTION
The μPD5759T6J is a silicon MOS monolithic integrated circuit designed as high gain impedance converter for electret
condenser microphone. This device exhibits low noise and high voltage gain characteristics.
The package is a 3-pin thin-type lead-less minimold, suitable for high-density surface mounting.
FEATURES
• Low noise
: NV = −98 dBV TYP. @VDD = 2.0 V, Cin = 3 pF, RL = 2.2 kΩ
: NV = −99 dBV TYP. @VDD = 2.0 V, Cin = 5 pF, RL = 2.2 kΩ
• High gain
: GV = +9.0 dB TYP. @VDD = 2.0 V, Cin = 3 pF, RL = 2.2 kΩ
: GV = +11.0 dB TYP. @VDD = 2.0 V, Cin = 5 pF, RL = 2.2 kΩ
• Low input capacitance
: Cinput = 2.0 pF TYP. @VDD = 2.0 V, RL = 2.2 kΩ
• Low consumption current
: IDD = 310 μA TYP. @VDD = 2.0 V, RL = 2.2 kΩ
• High-density surface mounting : 3-pin thin-type lead-less minimold (1.2 × 1.0 × 0.33 mm)
• Built-in the capacitor for RF noise immunity
• High ESD voltage
APPLICATIONS
• Microphone, Sensor etc.
ORDERING INFORMATION
Part Number
Order Number
Package
Marking
μPD5759T6J-E4 μPD5759T6J-E4-A 3-pin thin-type
6Z •
lead-less minimold
•
(Pb-Free)
•
Remark To order evaluation samples, please contact your nearby sales office.
Part number for sample order: μPD5759T6J
Supplying Form
Embossed tape 8 mm wide
Pin 3 face the perforation side of the tape
Qty 10 kpcs/reel
CAUTION
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
R09DS0018EJ0100 Rev.1.00
Apr 18, 2011
Page 1 of 5
Free Datasheet http://www.datasheet4u.com/
1 Page μPD5759T6J
TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)
CIRCUIT CURRENT vs. SUPPLY VOLTAGE
600
RL = 2.2 kΩ
VOLTAGE GAIN vs. SUPPLY VOLTAGE
12
500 10
400 8
300 6
200
100
0
0
1234
Supply Voltage VDD (V)
5
VOLTAGE GAIN vs. FREQUENCY
12
4
Cin = 3 pF
2
RL = 2.2 kΩ
Vin = 10 mVrms
f = 1 kHz
0
012 3 45
Supply Voltage VDD (V)
TOTAL HARMONIC DISTORTION
vs. OUTPUT VOLTAGE
10
10
8
61
4
VDD = 2 V
2
Cin = 3 pF
RL = 2.2 kΩ
Vin = 10 mVrms
0
10 100 1 000 10 000 100 000
Frequency f (Hz)
VOLTAGE GAIN vs.
INPUT CAPACITANCE
12
10
8
6
0.1
10
−95
VDD = 2 V
Cin = 3 pF
RL = 2.2 kΩ
f = 1 kHz
100 1 000
Output Voltage Vout (mVrms)
OUTPUT NOISE VOLTAGE
vs. INPUT CAPACITANCE
VDD = 2 V
RL = 2.2 kΩ
Vin = 0 Vrms
−100
4
VDD = 2 V
2 RL = 2.2 kΩ
Vin = 10 mVrms
f = 1 kHz
0
123 4 56
Input Capacitance Cin (pF)
−105
1
23 4 5
Input Capacitance Cin (pF)
6
Remark The graphs indicate nominal characteristics.
R09DS0018EJ0100 Rev.1.00
Apr 18, 2011
Page 3 of 5
Free Datasheet http://www.datasheet4u.com/
3Pages Revision History
μPD5759T6J Data Sheet
Rev.
1.00
Date
Apr 18, 2011
Page
−
First edition issued
Description
Summary
All trademarks and registered trademarks are the property of their respective owners.
C-1
Free Datasheet http://www.datasheet4u.com/
6 Page | |||
ページ | 合計 : 7 ページ | ||
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部品番号 | 部品説明 | メーカ |
UPD5759T6J | Low Noise and High Gain Amplifier IC | Renesas |