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BVSS123LT1GのメーカーはON Semiconductorです、この部品の機能は「Power MOSFET ( Transistor )」です。 |
部品番号 | BVSS123LT1G |
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部品説明 | Power MOSFET ( Transistor ) | ||
メーカ | ON Semiconductor | ||
ロゴ | |||
このページの下部にプレビューとBVSS123LT1Gダウンロード(pdfファイル)リンクがあります。 Total 5 pages
BSS123LT1G,
BVSS123LT1G
Power MOSFET
170 mAmps, 100 Volts
N−Channel SOT−23
Features
• AEC−Q101 Qualified and PPAP Capable − BVSS123LT1G
• These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Drain−Source Voltage
VDSS 100 Vdc
Gate−Source Voltage
− Continuous
− Non−repetitive (tp ≤ 50 ms)
VGS
VGSM
± 20
± 40
Vdc
Vpk
Drain Current
− Continuous (Note 1)
− Pulsed (Note 2)
Adc
ID 0.17
IDM 0.68
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR−5 Board
(Note 3) TA = 25°C
Derate above 25°C
PD 225 mW
1.8 mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA
556 °C/W
Junction and Storage Temperature
TJ, Tstg −55 to +150 °C
1. The Power Dissipation of the package may result in a lower continuous drain
current.
2. Pulse Width v 300 ms, Duty Cycle v 2.0%.
3. FR−5 = 1.0 0.75 0.062 in.
http://onsemi.com
170 mAMPS
100 VOLTS
RDS(on) = 6 W
N−Channel
3
1
2
MARKING DIAGRAM
& PIN ASSIGNMENT
3 Drain
3
1
2
SOT−23
CASE 318
STYLE 21
SA MG
G
12
Gate Source
SA = Device Code
M = Date Code
G = Pb−Free Package
(*Note: Microdot may be in either location)
*Date Code orientation and/or position may
vary depending upon manufacturing location.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2011
October, 2011 − Rev. 6
1
Publication Order Number:
BSS123LT1/D
Free Datasheet http://www.datasheet4u.com/
1 Page BSS123LT1G, BVSS123LT1G
TYPICAL ELECTRICAL CHARACTERISTICS
2.0
1.8 TA = 25°C
1.6
1.4
VGS = 10 V
9V
1.2 8 V
1.0
7V
0.8
0.6 6 V
0.4 5 V
0.2 4 V
3V
0
0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10
VDS, DRAN SOURCE VOLTAGE (VOLTS)
Figure 1. Ohmic Region
1.0
VDS = 10 V
0.8
0.6
0.4
0.2
- 55°C
25°C
125°C
0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10
VGS, GATE SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
2.4
2.2
2.0 VGS = 10 V
ID = 200 mA
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
- 60
- 20 + 20 + 60 + 100
T, TEMPERATURE (°C)
Figure 3. Temperature versus Static
Drain−Source On−Resistance
+ 140
1.2
1.05
1.1
1.10
1.0
0.95
0.9
0.85
0.8
0.75
0.7
- 60
1
0.1
VDS = VGS
ID = 1.0 mA
- 20 + 20 + 60 + 100
T, TEMPERATURE (°C)
Figure 4. Temperature versus Gate
Threshold Voltage
+ 140
100 ms
10 ms
1 ms
0.01
0.0010.1
VGS = 20 V
SINGLE PULSE
TC = 25°C
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
dc
1 10 100 1000
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. Maximum Rated Forward Biased
Safe Operating Area
http://onsemi.com
3
Free Datasheet http://www.datasheet4u.com/
3Pages | |||
ページ | 合計 : 5 ページ | ||
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PDF ダウンロード | [ BVSS123LT1G データシート.PDF ] |
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部品番号 | 部品説明 | メーカ |
BVSS123LT1G | Power MOSFET ( Transistor ) | ON Semiconductor |