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PDF ISA1399AS1 Data sheet ( Hoja de datos )
| Número de pieza | ISA1399AS1 | |
| Descripción | SMALL-SIGNAL TRANSISTOR | |
| Fabricantes | Isahaya Electronics | |
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〈SMALL-SIGNAL TRANSISTOR〉
ISA1399AS1
FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION
SILICON PNP EPITAXIAL TYPE
DESCRIPTION
ISA1399AS1 is a silicon PNP epitaxial type transistor
designed with High collector current, high voltage.
Complementary with ISA3581AS1.
FEATURE
●High collector current. ICM=600mA
●High gain band width product. fT=150MHz typ
●High VCEO. VCEO=-50V
●Excellent linearity of DC forward current gain.
OUTLINE DRAWING
4.0
0.1
0.45
2.5 2.5
Unit：ｍｍ
APPLICATION
For switching, small type motor drive application.
①②③
.
MAXIMUM RATINGS（Ta=25℃）
Symbol
VCBO
VEBO
VCEO
IC
ICM
Pc
Tj
Tstg
Parameter
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Peak collector current
Collector dissipation
Junction temperature
Storage temperature
Ratings
-55
-4
-50
-400
-600
600
＋150
-55～＋150
Unit
V
V
V
mA
mA
mW
℃
℃
JEITA：
JEDEC：
TERMINAL CONNECTER
①：EMITTER
②：COLLECTOR
③：BASE
ELECTRICAL CHARACTERISTICS（Ta=25℃）
Parameter
Parameter
V(BR)CBO
V(BR)EBO
V(BR)CEO
ICBO
IEBO
hFE※
VCE(sat)
fT
C to B break down voltage
E to B break down voltage
C to E break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
C to E Saturation Voltage
Gain band width product
Test conditions
IC= -10μA , IE = 0
IE= -10μA , IC = 0
IC= -100μA , RBE= ∞
V CB= -25V , I E= 0mA
V EB = -2V , IC= 0mA
V CE = -4V , IC= -100mA
I C= -200mA , I B= -10mA
V CE= -6V , I E= 10mA
Limits
Min Typ Max
-55 -
-
-4 -
-
-50 -
-
- - -1
- - -1
90 - 500
- -0.17 -0.5
- 150 -
Unit
V
V
V
μA
μA
-
V
MHz
※） It shows hFE classification in right table.
Item
hFE item
D
90～180
E
150～300
F
250～500
ISAHAYA ELECTRONICS CORPORATION
Free Datasheet http://www.datasheet4u.com/
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet ISA1399AS1.PDF ] | |
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