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IRLHS6376PBFのメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET ( Transistor )」です。 |
部品番号 | IRLHS6376PBF |
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部品説明 | Power MOSFET ( Transistor ) | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRLHS6376PBFダウンロード(pdfファイル)リンクがあります。 Total 9 pages
VDS
VGS
RDS(on) max
(@VGS = 4.5V)
RDS(on) max
(@VGS = 2.5V)
ID
(@Tc(Bottom) = 25°C)
30
±12
63
82
d3.4
V
V
mΩ
mΩ
A
PD - 97607A
IRLHS6376PbF
HEXFET® Power MOSFET
D1
G2
S2
D2
D1
S1
G1
D2
2mm x 2mm Dual PQFN
Applications
• Charge and discharge switch for battery application
• Load/System Switch
Features and Benefits
Features
Low RDSon (≤ 63mΩ)
Low Thermal Resistance to PCB (≤ 19°C/W)
Low Profile (≤ 1.0mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
Resulting Benefits
Lower Conduction Losses
Enable better thermal dissipation
results in Increased Power Density
⇒ Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Orderable part number Package Type
IRLHS6376TRPBF
IRLHS6376TR2PBF
PQFN Dual 2mm x 2mm
PQFN Dual 2mm x 2mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
400
Note
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
ID @ TC(Bottom) = 25°C
IDM
PD @TA = 25°C
PD @TC(Bottom) = 25°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
cContinuous Drain Current, VGS @ 4.5V (Package Limited)
Pulsed Drain Current
fPower Dissipation
fPower Dissipation
fLinear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Max.
30
±12
3.6d
2.9
7.6d
4.9d
3.4d
30
1.5
6.6
0.012
-55 to + 150
Units
V
A
W
W/°C
°C
Notes through are on page 2
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1
Free Datasheet 0ht7tp/:1//9w/w1w1.datasheet4u.com/
1 Page IRLHS6376PbF
100
10
1
TOP
BOTTOM
VGS
10V
4.5V
3.0V
2.5V
2.0V
1.8V
1.5V
1.4V
100
10
TOP
BOTTOM
VGS
10V
4.5V
3.0V
2.5V
2.0V
1.8V
1.5V
1.4V
0.1 1.4V
≤60μs PULSE WIDTH
Tj = 25°C
0.01
0.1
1
10 100
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
100
1
1.4V
0.1
0.1
≤60μs PULSE WIDTH
Tj = 150°C
1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.8
ID = 7.6A
1.6 VGS = 4.5V
10 1.4
TJ = 150°C
1 TJ = 25°C
VDS = 15V
≤60μs PULSE WIDTH
0.1
0.0 1.0 2.0 3.0 4.0 5.0
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
1.2
1.0
0.8
0.6
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance vs. Temperature
10000
1000
100
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
Crss
14.0
12.0
10.0
8.0
ID= 3.4A
VDS= 24V
VDS= 15V
VDS= 6.0V
6.0
4.0
2.0
10
1
10 100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
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0.0
012345678
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
3
Free Datasheet http://www.datasheet4u.com/
3Pages IRLHS6376PbF
L
VCC
DUT
0
1K S
Vds
Vgs(th)
Id
Vgs
Fig 17a. Gate Charge Test Circuit
15V
VDS
L
RG
20V
tp
D.U.T
IAS
0.01Ω
DRIVER
+
-
VDD
A
Fig 18a. Unclamped Inductive Test Circuit
Qgs1 Qgs2 Qgd
Qgodr
Fig 17b. Gate Charge Waveform
V(BR)DSS
tp
IAS
Fig 18b. Unclamped Inductive Waveforms
VDS
VGS
RG
RD
D.U.T.
V1G0SV
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1
+-V DD
Fig 19a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 19b. Switching Time Waveforms
6 www.irf.com
Free Datasheet http://www.datasheet4u.com/
6 Page | |||
ページ | 合計 : 9 ページ | ||
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PDF ダウンロード | [ IRLHS6376PBF データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
IRLHS6376PBF | Power MOSFET ( Transistor ) | International Rectifier |