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IRLHS6342PBFのメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET ( Transistor )」です。 |
部品番号 | IRLHS6342PBF |
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部品説明 | Power MOSFET ( Transistor ) | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRLHS6342PBFダウンロード(pdfファイル)リンクがあります。 Total 9 pages
VDS
VGS
RDS(on) max
(@VGS = 4.5V)
Qg (typical)
ID
(@TC (Bottom) = 25°C)
30
±12
15.5
11
12i
V
V
mΩ
nC
A
Applications
• Charge and discharge switch for battery application
• System/Load Switch
PD - 96339A
IRLHS6342PbF
TOP VIEW
HEXFET® Power MOSFET
D1
D2
G3
6D
D 5D
S 4S
D
D
DG
D
D
S
S
2mm x 2mm PQFN
Features and Benefits
Features
Low RDSon (≤ 15.5mΩ)
Low Thermal Resistance to PCB (≤ 13°C/W)
Low Profile (≤ 1.0 mm)
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Consumer Qualification
Resulting Benefits
Lower Conduction Losses
Enable better thermal dissipation
results in Increased Power Density
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Orderable part number
IRLHS6342TRPBF
IRLHS6342TR2PBF
Package Type
PQFN 2mm x 2mm
PQFN 2mm x 2mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
400
Note
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom)= 70°C
ID @ TC(Bottom) = 25°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V (Wirebond Limited)
Pulsed Drain Current
gPower Dissipation
gPower Dissipation
gLinear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Notes through are on page 2
www.irf.com
Max.
30
±12
8.7
6.9
19hi
15hi
12i
76
2.1
1.3
0.02
-55 to + 150
Units
V
A
W
W/°C
°C
1
Free Datasheet 0ht2tp/:2//5w/w1w1.datasheet4u.com/
1 Page IRLHS6342PbF
100
10
TOP
BOTTOM
VGS
10V
4.5V
3.0V
2.5V
2.0V
1.8V
1.5V
1.4V
100
10
TOP
BOTTOM
VGS
10V
4.5V
3.0V
2.5V
2.0V
1.8V
1.5V
1.4V
1
1.4V
0.1
0.1
≤60µs PULSE WIDTH
Tj = 25°C
1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
100
TJ = 150°C
TJ = 25°C
10
1.4V
≤60µs PULSE WIDTH
Tj = 150°C
1
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.0
ID = 8.5A
1.8 VGS = 4.5V
1.6
1.4
1.2
VDS = 15V
≤60µs PULSE WIDTH
1.0
1.0 1.5 2.0 2.5 3.0
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
10000
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = C gd
Coss = Cds + Cgd
1000
Ciss
3.5
1.0
0.8
0.6
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance vs. Temperature
14.0
12.0
10.0
8.0
ID= 8.5A
VDS= 24V
VDS= 15V
VDS= 6.0V
Coss
100 Crss
6.0
4.0
2.0
10
1
10
VDS, Drain-to-Source Voltage (V)
100
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
www.irf.com
0.0
0
5 10 15 20 25
QG, Total Gate Charge (nC)
30
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
3
Free Datasheet http://www.datasheet4u.com/
3Pages IRLHS6342PbF
L
VCC
DUT
0
1K S
Vds
Vgs(th)
Id
Vgs
Fig 17a. Gate Charge Test Circuit
15V
VDS
L
RG
20V
tp
D.U.T
IAS
0.01Ω
DRIVER
+
-
VDD
A
Fig 18a. Unclamped Inductive Test Circuit
Qgs1 Qgs2 Qgd
Qgodr
Fig 17b. Gate Charge Waveform
V(BR)DSS
tp
IAS
Fig 18b. Unclamped Inductive Waveforms
VDS
VGS
RG
RD
D.U.T.
V1G0SV
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1
+-V D D
Fig 19a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 19b. Switching Time Waveforms
6 www.irf.com
Free Datasheet http://www.datasheet4u.com/
6 Page | |||
ページ | 合計 : 9 ページ | ||
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部品番号 | 部品説明 | メーカ |
IRLHS6342PBF | Power MOSFET ( Transistor ) | International Rectifier |