|
|
PDF IRLHS6242PBF Data sheet ( Hoja de datos )
| Número de pieza | IRLHS6242PBF | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de IRLHS6242PBF (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
|
No Preview Available !
VDS
VGS
RDS(on) max
(@VGS = 4.5V)
RDS(on) max
(@VGS = 2.5V)
ID
(@TC (Bottom) = 25°C)
20
±12
11.7
15.5
12d
V
V
mΩ
mΩ
A
Applications
• Charge and discharge switch for battery application
• System/Load Switch
PD - 97582B
IRLHS6242PbF
HEXFET® Power MOSFET
D
D
DG
D
D
S
2mm x 2mm PQFN
S
Features and Benefits
Features
Low RDSon (≤ 11.7mΩ)
Low Thermal Resistance to PCB (≤ 13°C/W)
Low Profile (≤ 1.0mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
results in
⇒
Resulting Benefits
Lower Conduction Losses
Enable better thermal dissipation
Increased Power Density
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Orderable part number
IRLHS6242TRPBF
IRLHS6242TR2PBF
Package Type
PQFN 2mm x 2mm
PQFN 2mm x 2mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
400
Note
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 70°C
ID @ TC(Bottom) = 25°C
IDM
PD @TA = 25°C
PD @TC(Bottom) = 25°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
iContinuous Drain Current, VGS @ 4.5V
iContinuous Drain Current, VGS @ 4.5V
cContinuous Drain Current, VGS @ 4.5V (Package Limited)
Pulsed Drain Current
gPower Dissipation
gPower Dissipation
gLinear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Max.
20
±12
10
8.3
22d
18d
12d
88
1.98
9.6
0.016
-55 to + 150
Units
V
A
W
W/°C
°C
Notes through are on page 2
www.irf.com
1
Free Datash0ee2t /h2tt3p://2/w0w1w1.datasheet4u.com/
1 page  
25
ID = 8.5A
20
15
TJ = 125°C
10
TJ = 25°C
5
0 2 4 6 8 10 12 14 16
VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance vs. Gate Voltage
70
ID
60 TOP 2.2A
4.3A
50 BOTTOM 8.5A
40
30
20
10
0
25 50 75 100 125 150
Starting TJ , Junction Temperature (°C)
Fig 14. Maximum Avalanche Energy vs. Drain Current
IRLHS6242PbF
35
30
25
20
Vgs = 2.5V
15
Vgs = 4.5V
10
5
0 10 20 30 40 50 60 70
ID, Drain Current (A)
Fig 13. Typical On-Resistance vs. Drain Current
600
500
400
300
200
100
0
1E-5
1E-4
1E-3
1E-2
1E-1
1E+0
Time (sec)
Fig 15. Typical Power vs. Time
D.U.T
+
-
RG
www.irf.com
+
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
Circuit Layout Considerations
• Low Stray Inductance
-
• Ground Plane
• Low Leakage Inductance
Current Transformer
- +
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
• dv/dt controlled by RG
• Driver same type as D.U.T.
VDD +
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
-
Re-Applied
Voltage
Body Diode
Inductor Curent
Forward Drop
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
*VGS=10V
VDD
ISD
5
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IRLHS6242PBF.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| IRLHS6242PBF | Power MOSFET ( Transistor ) | International Rectifier |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |