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PDF IRF7799L2TR1PBF Data sheet ( Hoja de datos )
| Número de pieza | IRF7799L2TR1PBF | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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l RoHS Compliant, Halogen Free
l Lead-Free (Qualified up to 260°C Reflow)
l Ideal for High Performance Isolated Converter
Primary Switch Socket
l Optimized for Synchronous Rectification
l Low Conduction Losses
l High Cdv/dt Immunity
l Low Profile (<0.7mm)
l Dual Sided Cooling Compatible
l Compatible with existing Surface Mount Techniques
l Industrial Qualified
PD - 96266
IRF7799L2TRPbF
IRF7799L2TR1PbF
DirectFET Power MOSFET
Typical values (unless otherwise specified)
VDSS
VGS
250V min ± 30V max
Qg tot
Qgd
110nC
39nC
RDS(on)
32mΩ@ 10V
Vgs(th)
4.0V
S
S
D GS
S
S
S
SD
S
Applicable DirectFET Outline and Substrate Outline
SB SC
M2
M4
L8 DirectFET ISOMETRIC
L4 L6 L8
Description
The IRF7799L2TR/TR1PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to
achieve the lowest on-state resistance in a package that has a footprint smaller than a D2PAK and only 0.7 mm profile. The DirectFET package
is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection
soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package
allows dual sided cooling to maximize thermal transfer in power systems.
The IRF7799L2TR/TR1PbF is optimized for high frequency switching and synchronous rectification applications. The reduced total losses
in the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system
reliability improvements, and makes this device ideal for high performance power converters.
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TA = 25°C
ID @ TC = 25°C
IDM
EAS
IAR
Gate-to-Source Voltage
fContinuous Drain Current, VGS @ 10V (Silicon Limited)
fContinuous Drain Current, VGS @ 10V (Silicon Limited)
eContinuous Drain Current, VGS @ 10V (Silicon Limited)
fContinuous Drain Current, VGS @ 10V (Package Limited)
gPulsed Drain Current
hSingle Pulse Avalanche Energy
ÃgAvalanche Current
Max.
250
±30
35
25
6.6
375
140
325
21
Units
V
A
mJ
A
200
180 ID = 21A
160
140
120
60
55 Vgs = 7.0V
Vgs = 8.0V
50
Vgs = 10V
Vgs = 15V
45
TJ = 25°C
100 40
80
TJ = 125°C
60
40
20
4
TJ = 25°C
8 12 16 20
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
Notes:
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
www.irf.com
35
30
25
0
20 40 60 80 100
ID, Drain Current (A)
Fig 2. Typical On-Resistance vs. Drain Current
TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 1.42mH, RG = 25Ω, IAS = 21A.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
1
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1000
100
10
TJ = 175°C
TJ = 25°C
TJ = -40°C
1
VGS = 0V
0.1
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
1
VSD, Source-to-Drain Voltage (V)
Fig 10. Typical Source-Drain Diode Forward Voltage
40
IRF7799L2TR/TR1PbF
1000
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
10
DC
100µsec
1msec
1 10msec
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1 10
100 1000
VDS, Drain-to-Source Voltage (V)
Fig11. Maximum Safe Operating Area
6.0
5.0
30
4.0
20
3.0
ID = 250µA
10
ID = 1.0mA
2.0 ID = 1.0A
0
25
50 75 100 125 150
TC , Case Temperature (°C)
175
Fig 12. Maximum Drain Current vs. Case Temperature
1400
1200
1000
1.0
-75 -50 -25 0 25 50 75 100 125 150 175
TJ , Temperature ( °C )
Fig 13. Typical Threshold Voltage vs.
Junction Temperature
ID
TOP
1.33A
2.53A
BOTTOM 21A
800
600
400
200
www.irf.com
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Fig 14. Maximum Avalanche Energy Vs. Drain Current
5
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IRF7799L2TR/TR1PbF
Part number
IRF7799L2TRPbF
IRF7799L2TR1PbF
Package Type
DirectFET2 Large Can
DirectFET2 Large Can
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
1000
Note
"TR" suffix
"TR1" suffix
Qualification Information†
Qualification level
Industrial ††
(per JEDEC JESD47F††† guidelines)
Comments: This family of products has passed JEDEC’s Industrial
qualification. IR’s Consumer qualification level is granted by extension of the
higher Industrial level.
Moisture Sensitivity Level
RoHS Compliant
DFET2
MSL1
(per JEDEC J-STD-020D†††)
Yes
Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/product-info/reliability
Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
Applicable version of JEDEC standard at the time of product release.
Data and specifications subject to change without notice.
This product has been designed and qualified to MSL1 rating for the Industrial market.
Additional storage requirement details for DirectFET products can be found in application note AN1035 on IRs Web site.
Qualification Standards can be found on IR’s Web site.
www.irf.com
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.08/2009
11
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