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STP15N05L の電気的特性と機能

STP15N05LのメーカーはSTMicroelectronicsです、この部品の機能は「N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR」です。


製品の詳細 ( Datasheet PDF )

部品番号 STP15N05L
部品説明 N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
メーカ STMicroelectronics
ロゴ STMicroelectronics ロゴ 




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STP15N05L Datasheet, STP15N05L PDF,ピン配置, 機能
STP15N05L
STP15N05LFI
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
TYPE
STP15N05L
STP15N05LFI
VDSS
50 V
50 V
R DS( on)
< 0.15
< 0.15
ID
15 A
10 A
s TYPICAL RDS(on) = 0.115
s AVALANCHE RUGGED TECHNOLOGY
s 100% AVALANCHE TESTED
s REPETITIVE AVALANCHE DATA AT 100oC
s LOW GATE CHARGE
s LOGIC LEVEL COMPATIBLE INPUT
s 175oC OPERATING TEMPERATURE
s APPLICATION ORIENTED
CHARACTERIZATION
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS
s REGULATORS
s DC-DC & DC-AC CONVERTERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
3
2
1
TO-220
3
2
1
ISOWATT220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
P ar amete r
VD S Drain-source Voltage (VGS = 0)
VDG R Drain- gate Voltage (RGS = 20 k)
VGS Gate-source Voltage
ID Drain Current (continuous) at T c = 25 oC
ID Drain Current (continuous) at T c = 100 oC
IDM() Drain Current (pulsed)
Ptot Total Dissipation at Tc = 25 oC
Derating Factor
VISO Insulation Withstand Voltage (DC)
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
() Pulse width limited by safe operating area
November 1996
Val ue
STP15N05L
STP15N05LFI
50
50
± 15
15 10
10 7
60 60
70 35
0. 47
0. 23
2000
-65 to 175
175
Unit
V
V
V
A
A
A
W
W/oC
V
oC
oC
1/10
Free Datasheet http://www.datasheet4u.com/

1 Page





STP15N05L pdf, ピン配列
STP15N05L/FI
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symb ol
td(on)
tr
(di/ d t) o n
Qg
Qgs
Qgd
Parameter
Turn-on Time
Rise Time
Turn-on Current Slope
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Test Conditions
VDD = 25 V ID = 7.5 A
RG = 50
VGS = 5 V
(see test circuit, figure 3)
VDD = 40 V ID = 15 A
RG = 50
VGS = 5 V
(see test circuit, figure 5)
VDD = 40 V ID = 15 A VGS = 5 V
Min.
Typ.
60
190
Max.
90
270
Unit
ns
ns
120 A/µs
12 18 nC
7 nC
4 nC
SWITCHING OFF
Symb ol
tr(Vof f)
tf
tc
Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 40 V ID = 15 A
RG = 50 VGS = 5 V
(see test circuit, figure 5)
Min.
Typ.
40
60
110
Max.
60
90
160
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symb ol
Parameter
Test Conditions
IS D
I SDM()
Source-drain Current
Source-drain Current
(pulsed)
VSD () Forward On Voltage
ISD = 15 A VGS = 0
trr Reverse Recovery
Time
Qrr Reverse Recovery
Charge
ISD = 15 A di/dt = 100 A/µs
VDD = 25 V Tj = 150 oC
(see test circuit, figure 5)
IRRM Reverse Recovery
Current
() Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
() Pulse width limited by safe operating area
Min.
Typ.
Max.
15
60
Unit
A
A
80
0. 18
4.5
1.5
V
ns
µC
A
Safe Operating Areas For TO-220
Safe Operating Areas For ISOWATT220
3/10
Free Datasheet http://www.datasheet4u.com/


3Pages


STP15N05L 電子部品, 半導体
STP15N05L/FI
Turn-on Current Slope
Turn-off Drain-source Voltage Slope
Cross-over Time
Switching Safe Operating Area
Accidental Overload Area
Source-drain Diode Forward Characteristics
6/10
Free Datasheet http://www.datasheet4u.com/

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
STP15N05L

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

STMicroelectronics
STMicroelectronics
STP15N05LFI

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

STMicroelectronics
STMicroelectronics


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