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STU150N3LLH6のメーカーはSTMicroelectronicsです、この部品の機能は「N-channel MOSFET」です。 |
部品番号 | STU150N3LLH6 |
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部品説明 | N-channel MOSFET | ||
メーカ | STMicroelectronics | ||
ロゴ | |||
このページの下部にプレビューとSTU150N3LLH6ダウンロード(pdfファイル)リンクがあります。 Total 16 pages
STD150N3LLH6
STP150N3LLH6, STU150N3LLH6
N-channel 30 V, 0.0024 Ω , 80 A, DPAK, IPAK, TO-220
STripFET™ VI DeepGATE™ Power MOSFET
Features
Type
STD150N3LLH6
STP150N3LLH6
STu150N3LLH6
VDSS
30 V
30 V
30 V
RDS(on) max
0.0028 Ω
0.0033 Ω
0.0033 Ω
ID
80 A
80 A
80 A
■ RDS(on) * Qg industry benchmark
■ Extremely low on-resistance RDS(on)
■ High avalanche ruggedness
■ Low gate drive power losses
Application
■ Switching applications
Description
This product utilizes the 6th generation of design
rules of ST’s proprietary STripFET™ technology,
with a new gate structure.The resulting Power
MOSFET exhibits the lowest RDS(on) in all
packages.
3
1
DPAK
IPAK
3
2
1
3
2
1
TO-220
Figure 1. Internal schematic diagram
$ 4!" OR
'
Table 1. Device summary
Order codes
STD150N3LLH6
STP150N3LLH6
STU150N3LLH6
Marking
150N3LLH6
150N3LLH6
150N3LLH6
3
!-V
Package
DPAK
TO-220
IPAK
Packaging
Tape and reel
Tube
Tube
September 2009
Doc ID 15227 Rev 3
1/16
www.st.com
16
Free Datasheet http://www.datasheet4u.com/
1 Page STD150N3LLH6, STP150N3LLH6, STU150N3LLH6
1 Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
VDS Drain-source voltage (VGS = 0)
VGS Gate-source voltage
ID (1) Drain current (continuous) at TC = 25 °C
ID Drain current (continuous) at TC = 100 °C
IDM (2) Drain current (pulsed)
PTOT Total dissipation at TC = 25 °C
Derating factor
EAS (3) Single pulse avalanche energy
Tstg Storage temperature
Tj Max. operating junction temperature
1. Limited by wire bonding
2. Pulse width limited by safe operating area
3. Starting Tj = 25°C, ID = 40 A, VDD = 25 V
Value
30
± 20
80
80
320
110
0.73
525
-55 to 175
175
Table 3. Thermal resistance
Symbol
Parameter
Rthj-case
Rthj-amb
Tj
Thermal resistance junction-case max
Thermal resistance junction-case max
Maximum lead temperature for soldering purpose
Value
1.36
100
275
Unit
V
V
A
A
A
W
W/°C
mJ
°C
°C
Unit
°C/W
°C/W
°C
Doc ID 15227 Rev 3
3/16
Free Datasheet http://www.datasheet4u.com/
3Pages Electrical characteristics
STD150N3LLH6, STP150N3LLH6, STU150N3LLH6
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area
Figure 3. Thermal impedance
ID
(A)
100
OpLeirmaittieodn binytmhiasxaRreDaS(iosn)
AM03997v1
10
1
0.1
0.1
Tj=150°C
Tc=25°C
Sinlge
pulse
1 10
100µs
1ms
10ms
VDS(V)
Figure 4. Output characteristics
Figure 5. Transfer characteristics
ID
(A)
VGS=10V
350
AM03998v1
ID
(A)
300 VDS=1V
AM03999v1
300
5V
250
200
150
100
50
4V
3V
250
200
150
100
50
0
0 2 4 VDS(V)
0
0 2 4 6 8 10 VGS(V)
Figure 6. Normalized BVDSS vs temperature Figure 7. Static drain-source on resistance
BVDSS
(norm)
1.06
1.04
ID=250µA
AM04903v1
RDS(on)
(Ω)
4.5
4.0
3.5
VGS=10V
AM04905v1
1.02
1.00
3.0
2.5
2.0
0.98
0.96
0.94
-50 0 50 100 150 TJ(°C)
1.5
1.0
0.5
0.0
0 20 40 60 80 ID(A)
6/16 Doc ID 15227 Rev 3
Free Datasheet http://www.datasheet4u.com/
6 Page | |||
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部品番号 | 部品説明 | メーカ |
STU150N3LLH6 | N-channel MOSFET | STMicroelectronics |