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2N3819 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 2N3819
部品説明 SFET RF/VHF/ UHF/ Amplitiers
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 

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2N3819 Datasheet, 2N3819 PDF,ピン配置, 機能
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2N3819
N-Channel RF Amplifier
• This device is designed for RF amplifier and mixer applications
operating up to 450MHz, and for analog switching requiring low
capacitance.
• Sourced from process 50.
1 TO-92
1. Drain 2. Gate 3. Source
Epitaxial Silicon Transistor
Absolute Maximum Ratings* TC=25°C unless otherwise noted
Symbol
Parameter
VDG Drain-Gate Voltage
VGS Gate-Source Voltage
ID Drain Current
IGF Forward Gate Current
TSTG
Storage Temperature Range
* This ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Ratings
25
-25
50
10
-55 ~ 150
NOTES:
1) These rating are based on a maximum junction temperature of 150 degrees C.
2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
mA
mA
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Off Characteristics
V(BR)GSS Gate-Source Breakdwon Voltage
IGSS
Gate Reverse Current
VGS(off) Gate-Source Cutoff Voltage
VGS Gate-Source Voltage
On Characteristics
IG = 1.0µA, VDS = 0
VGS = -15V, VDS = 0
VDS = 15V, ID = 2.0nA
VDS = 15V, ID = 200µA
IDSS
Zero-Gate Voltage Drain Current
Small Signal Characteristics
VDS = 15V, VGS = 0
gfs
goss
yfs
Ciss
Crss
Forward Transfer Conductance
Output Conductance
Forward Transfer Admittance
Input Capacitance
Reverse Transfer Capacitance
VDS = 15V, VGS = 0, f = 1.0KHz
VDS= 15V, VGS = 0, f = 1.0KHz
VDS= 15V, VGS = 0, f = 1.0KHz
VDS = 15V, VGS = 0, f = 1.0KHz
VDS = 15V, VGS = 0, f = 1.0KHz
Min.
25
-0.5
2.0
2000
1600
Typ.
Max. Units
V
2.0 nA
8.0 V
-7.5 V
20 mA
6500
50
8.0
4.0
µmhos
µmhos
µmhos
pF
pF
Thermal Characteristics TA=25°C unless otherwise noted
Symbol
Parameter
PD Total Device Dissipation
Derate above 25°C
RθJC
Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
* Device mounted on FR-4 PCB 1.5” × 1.6” × 0.06”
Max.
350
2.8
125
357
Units
mW
mW/°C
°C/W
°C/W
©2002 Fairchild Semiconductor Corporation
Rev. A1, December 2002

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