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AON6782 の電気的特性と機能

AON6782のメーカーはAlpha & Omega Semiconductorsです、この部品の機能は「N-Channel MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 AON6782
部品説明 N-Channel MOSFET
メーカ Alpha & Omega Semiconductors
ロゴ Alpha & Omega Semiconductors ロゴ 




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AON6782 Datasheet, AON6782 PDF,ピン配置, 機能
AON6782
30V N-Channel MOSFET
SRFET TM
General Description
Product Summary
SRFETTM AON6782 uses advanced trench technology
with a monolithically integrated Schottky diode to provide
excellent RDS(ON),and low gate charge. This device is
suitable for use as a low side FET in SMPS, load switching
and general purpose applications.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS = 4.5V)
30V
85A
< 2.4m
< 2.9m
100% UIS Tested
100% Rg Tested
Top View
DFN5X6
Bottom View
PIN1
Top View
18
27
36
45
G
D
SRFETTM
Soft Recovery MOSFET:
Integrated Schottky Diode
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
ID
IDM
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche energy L=0.1mH C
IDSM
IAS, IAR
EAS, EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum
30
±12
85
66
260
24
19
57
162
83
33
2.5
1.6
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
15
42
1.1
Max
20
50
1.5
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Rev1 : Oct 2010
www.aosmd.com
Page 1 of 7
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1 Page





AON6782 pdf, ピン配列
AON6782
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120
3V
4.5V
90 10V
60
2.5V
30
0
012345
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
100
VDS=5V
80
60
125°C
40
20 25°C
0
1 1.5 2 2.5 3
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
5
4
3 VGS=4.5V
2
1 VGS=10V
0
0 5 10 15 20 25 30
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
2
1.8
VGS=4.5V
1.6 ID=20A
17
1.4 5
1.2
VGS=10V
ID=20A
2
10
1
0.8
0 25 50 75 100 125 150 175 200
Temperature (°C)
0
Figure 4: On-Resistance vs. Junction Te1m8perature
(Note E)
8
ID=20A
6
4 125°C
2
25°C
0
2 4 6 8 10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
1.0E+02
1.0E+01
1.0E+040 0
125°
1.0E-01
25°
1.0E-02
1.0E-03
1.0E-04
1.0E-05
0.0 0.2 0.4 0.6 0.8 1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Rev1 : Oct 2010
www.aosmd.com
Page 3 of 7
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3Pages


AON6782 電子部品, 半導体
AON6782
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1.0E-01
1.0E-02
1.0E-03
1.0E-04
VDS=30V
VDS=15V
1.0E-05
0 50 100 150 200
Temperature (°C)
Figure 17: Diode Reverse Leakage Current vs.
Junction Temperature
40 12
35 di/dt=800A/µs
30
25
Qrr
20
15 Irm
10
0
5 10
125ºC
25ºC
125ºC
25ºC
15 20
25
10
8
6
4
2
30
IS (A)
Figure 18: Diode Reverse Recovery Charge and
Peak Current vs. Conduction Current
35
30 Is=20A
25
20
Qrr
15
125ºC
25ºC
20
15
10
10
5
0
0
Irm
200
125ºC
25ºC
400 600 800
5
0
1000
di/dt (A/µs)
Figure 20: Diode Reverse Recovery Charge and
Peak Current vs. di/dt
0.7
20A 10A 5A
0.6
0.5
0.4
0.3
0.2 IS=1A
0.1
0
0 50 100 150 200
Temperature (°C)
Figure 18: Diode Forward voltage vs. Junction
Temperature
14
di/dt=800A/µs
12
10 trr
8
6
4S
2
125ºC
25ºC
125ºC
25ºC
3
2.5
2
1.5
1
0.5
00
0 5 10 15 20 25 30
IS (A)
Figure 19: Diode Reverse Recovery Time and
Softness Factor vs. Conduction Current
21
18
15 trr
25ºC
12 125ºC
9
6 S 25ºC
Is=20A
4
3.5
3
2.5
2
1.5
1
3 125º
0.5
00
0 200 400 600 800 1000
di/dt (A/µs)
Figure 21: Diode Reverse Recovery Time and
Softness Factor vs. di/dt
Rev1 : Oct 2010
www.aosmd.com
Page 6 of 7
Free Datasheet http://www.datasheet4u.com/

6 Page



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