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AON6712 の電気的特性と機能

AON6712のメーカーはAlpha & Omega Semiconductorsです、この部品の機能は「N-Channel MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 AON6712
部品説明 N-Channel MOSFET
メーカ Alpha & Omega Semiconductors
ロゴ Alpha & Omega Semiconductors ロゴ 




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AON6712 Datasheet, AON6712 PDF,ピン配置, 機能
AON6712
N-Channel Enhancement Mode Field Effect Transistor
SRFET TM
General Description
Features
The AON6712 uses advanced trench technology to
provide excellent RDS(ON), low gate charge.This device
is suitable for use as a high side switch in SMPS and
general purpose applications. Standard Product
AON6712 is Pb-free (meets ROHS & Sony 259
specifications).
VDS (V) = 30V
ID = 20A (VGS = 10V)
RDS(ON) < 5.5m(VGS = 10V)
RDS(ON) < 6.5m(VGS = 4.5V)
Fits SOIC8
footprint !
DFN5X6
Top View
SD
S DG
SD
GD
D
SRFET TM
Soft Recovery MOSFET:
Integrated Schottky Diode
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
Current B,J
TC=25°C
TC=100°C
ID
Pulsed Drain Current
IDM
Continuous Drain
Current H
Avalanche Current C
TA=25°C
TA=70°C
Repetitive avalanche energy L=0.3mH C
IDSM
IAR
EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range TJ, TSTG
Maximum
30
±12
30
30
80
16
13
42
264
62.5
25
2.5
1.6
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Case C
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
14.2
42
1.2
Max
20
50
2.0
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
Free Datasheet http://www.datasheet4u.com/

1 Page





AON6712 pdf, ピン配列
AON6712
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
80
60 Vgs=10V1
40 Vgs=3V
30
25 VDS=5V
20
15 125°C
20
0
0
VGS=2.5V
1234
VDS (Volts)
Figure 1: On-Region Characteristics
5
10
5
0
1
25°C
1.5 2 2.5 3 3.5
VGS(Volts)
Figure 2: Transfer Characteristics
8
7
VGS=4.5V
5
4 VGS=10V
1.8
ID=20A
1.6
1.4
1.2
1
VGS=10V
VGS=4.5V
4
2
0 5 10 15 20 25
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
30
0.8
0
25 50 75 100 125 150
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
14
ID=20A
12
10 125°C
8
6
4
25°C
2
2 4 6 8 10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
1.0E+02
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
0.0
125°C
25°C
0.2 0.4 0.6 0.8
VSD (Volts)
Figure 6: Body-Diode Characteristics
1.0
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
Free Datasheet http://www.datasheet4u.com/


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共有リンク

Link :


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