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Datasheet AON6536 PDF ( 特性, スペック, ピン接続図 )

部品番号 AON6536
部品説明 N-Channel MOSFET
メーカ Alpha & Omega Semiconductors
ロゴ Alpha & Omega Semiconductors ロゴ 
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AON6536 Datasheet, AON6536 PDF,ピン配置, 機能
AON6536
30V N-Channel MOSFET
General Description
Product Summary
The AON6536 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON). This device is ideal for load switch
and battery protection applications.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS=4.5V)
100% UIS Tested
100% Rg Tested
30V
55A
< 7m
< 10m
Top View
DFN5X6
Bottom View
PIN1
Top View
18
27
36
45
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
ID
IDM
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche Energy L=0.05mH C
IDSM
IAS
EAS
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum
30
±20
55
35
135
22
17.5
35
31
35.5
14
5.5
3.6
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
18
40
2.8
Max
22
55
3.5
D
S
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Rev0 : Aug 2012
www.aosmd.com
Page 1 of 6
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1 Page



AON6536 pdf, ピン配列
AON6536
CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
4.5V
50
6V
40 10V
3.5V
60
VDS=5V
50
40
30 30
20
3V
125°C
20
10
VGS=2.5V
0
01234
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
5
10 25°C
0
0.5 1.5 2.5 3.5 4.5
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
5.5
12
10
VGS=4.5V
8
6
4 VGS=10V
2
0 5 10 15 20 25 30
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
1.8
VGS=10V
1.6 ID=20A
1.4 17
5
1.2 2
VGS=4.51V0
1 ID=20A
0.8
0
25 50 75 100 125 150 175
Temperature (°C) 0
Figure 4: On-Resistance vs. Junction18Temperature
(Note E)
15
ID=20A
12
125°C
9
6
25°C
3
0
2 4 6 8 10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
1.0E+02
1.0E+01
40
1.0E+00
125°C
1.0E-01
1.0E-02
25°C
1.0E-03
1.0E-04
1.0E-05
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Rev0: Aug 2012
www.aosmd.com
Page 3 of 6
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3Pages


AON6536 電子部品, 半導体
AON6536
+
VDC
-
Vgs
Ig
Gate Charge Test Circuit & Waveform
+
Vds
VDC
DUT -
Vgs
10V
Qgs
Qg
Qgd
Vds
Vgs
Rg
Resistive Switching Test Circuit & Waveforms
RL
Vds
DUT
+
Vdd
VDC
-
Charge
90%
10%
Vgs
Vgs
td(on) tr
ton
td(off)
tf
toff
Vds
Id
Vgs
Rg
Vgs
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E=
AR
1/2
LIAR
Vds
Vgs
+
Vdd
VDC
- Id
DUT
Vgs
B VD S S
I AR
Vds +
Vds -
Isd
Vgs
Ig
DUT
L
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vgs
+
Vdd
VDC
-
Isd
Vds
I F trr
dI/dt
I RM
Vdd
Rev0: Aug 2012
www.aosmd.com
Page 6 of 6
Free Datasheet http://www.datasheet4u.com/

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