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PDF 2SC1621 Data sheet ( Hoja de datos )
| Número de pieza | 2SC1621 | |
| Descripción | NPN Silicon Epitaxial Transistor | |
| Fabricantes | Kexin | |
| Logotipo |  |
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SMD Type
TransistIoCrs
NPN Silicon Epitaxial Transistor
2SC1621
Features
High speed : tstg=20ns MAX.
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
12
0.95+0.1
-0.1
1.9+0.1
-0.1
Unit: mm
0.1+0.05
-0.01
Absolute Maximum Ratings Ta = 25
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Total power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
PT
Tj
Tstg
Rating
40
20
5
200
200
150
-55 to +150
Unit
V
V
V
mA
mW
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain *
Collector-emitter saturation voltage *
Base-emitter saturation voltage *
Gain bandwidth product
Output capacitance
Turn-on time
Storage time
Turn-off time
*. PW 350ìs,duty cycle 2%
Symbol
Testconditons
ICBO VCB = 30V, IE=0
IEBO VEB = 4V, IC=0
hFE VCE = 0.5V , IC = 1mA
VCE(sat) IC = 10mA , IB = 1mA
VBE(sat) IC = 10mA , IB = 1mA
fT VCE = 10V , IE = -10mA
Cob VCB = 10V , IE = 0 , f = 1.0MHz
ton
tstg See Test Circuit
toff
Min Typ Max Unit
100 nA
100 nA
40 80 180
0.13 0.25 V
0.74 0.85 V
200 500
MHz
3.0 6.0 pF
12 20 ns
7 20 ns
18 40 ns
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| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2SC1621.PDF ] | |
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