DataSheet.jp

2SB1412 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 2SB1412
部品説明 Low Frequency Transistor
メーカ Kexin
ロゴ Kexin ロゴ 

Total 1 pages
		

No Preview Available !

2SB1412 Datasheet, 2SB1412 PDF,ピン配置, 機能
SMD Type
Low Frequency Transistor
2SB1412
Transistors
Features
Low VCE(sat).
PNP silicon transistor.
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30+0.1
-0.1
0.50+0.8
-0.7
Unit: mm
0.80+0.1
-0.1
0.127
max
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current pulse
Collector power dissipation
Junction temperature
Storage temperature
* Single pulse ,PW=10ms
(Tc=25 )
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Output capacitance
Transition frequency
2.3
4.60+0.15
-0.15
0.60+0.1
-0.1
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
PC
Tj
Tstg
Rating
-30
-20
-6
-5
-10
-10
1
10
150
-55 to +150
Unit
V
V
V
A(DC)
A (Pulse)*
A
W
W
1 Base
2 Collector
3 Emitter
Symbol
Testconditons
BVCBO IC=-50ìA
BVCEO IC=-1mA
BVEBO IE=-50ìA
ICBO VCB=-20V
IEBO VEB=-5V
VCE(sat) IC= -4A, IB= -0.1A
hFE VCE= -2V, IC= -0.5A
fT VCE= -6V, IE=50mA, f=100MHz
Cob VCB= -20V,IE=0A,f=1MHz
Min Typ Max Unit
-30 V
-20 V
-6 V
-0.5 ìA
-0.5 ìA
-0.35 -1.0 V
82 390
120 MHz
60 pF
hFE Classification
Rank
hFE
P
82 180
Q
120 270
R
180 390
www.kexin.com.cn 1
Free Datasheet http://www.datasheet4u.com/

1 Page





ページ 合計 : 1 ページ
PDF
ダウンロード
[ 2SB1412.PDF ]

共有リンク

Link :

おすすめデータシート

部品番号部品説明メーカ
2SB1411

There is a function of SILICON PNP TRIPLE DIFFUSED TYPE TRANSISTOR.

Toshiba Semiconductor
Toshiba Semiconductor
2SB1411

There is a function of SILICON POWER TRANSISTOR.

SavantIC
SavantIC
2SB1412

There is a function of Low Frequency Transistor.

Rohm
Rohm
2SB1412

There is a function of Silicon PNP Power Transistor.

Inchange Semiconductor
Inchange Semiconductor

多くを見つけるデータシート

部品番号部品説明メーカ
82S129

The 82S126 and 82S129 are field programmable, which means that custom patterns are immediately available by following the Signetics Generic fusing procedure. 1K-bit TTL Bipolar PROM, Address access time : 50ns max.

NXP
NXP
D1695

This part is a darlington connection NPN silicon epitaxial transistor. The 2SD1695 is a Darlington connection transistor and incorporates a dumper diode between the collector and emitter and a constant voltage diode and protection elements between the collector and base. This transistor is ideal for drives in solenoid and actuators.

NEC
NEC

www.DataSheet.jp    |   2018   |  メール    |   最新    |   Sitemap