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PDF 2SB1424 Data sheet ( Hoja de datos )
| Número de pieza | 2SB1424 | |
| Descripción | TRANSISTOR | |
| Fabricantes | Jin Yu Semiconductor | |
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2SB1 424
TRANSISTOR(PNP)
SOT-89-3L
FEATURES
Excellent DC Current Gain
Low Collector-emitter saturation voltage
Complement the 2SD2150
1. BASE
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
-20
-20
-6
-3
500
250
150
-55~+150
Unit
V
V
V
A
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Collector output capacitance
Transition frequency
Symbol
Test conditions
Min Typ Max Unit
V(BR)CBO IC=-50µA,IE=0
-20
V
V(BR)CEO IC=-1mA,IB=0
-20
V
V(BR)EBO IE=-50µA,IC=0
-6
V
ICBO VCB=-20V,IE=0
-0.1 µA
IEBO
VEB=-5V,IC=0
-0.1 µA
hFE VCE=-2V, IC=-0.1A
120
390
VCE(sat) IC=-2A,IB=-0.1A
-0.5 V
Cob VCB=-10V,IE=0, f=1MHz
35
pF
VCE=-2V,IC=-0.5A,
fT
f=100MHz
240 MHz
CLASSIFICATION OF hFE
RANK
Q
RANGE
120–270
MARKING
AEQ
R
180–390
AER
JinYu
semiconductor
www.htsemi.com
Free Datasheet http://www.datasheet4u.com/
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