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40N60A4D の電気的特性と機能

40N60A4DのメーカーはFairchild Semiconductorです、この部品の機能は「HGT1N40N60A4D」です。


製品の詳細 ( Datasheet PDF )

部品番号 40N60A4D
部品説明 HGT1N40N60A4D
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 




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40N60A4D Datasheet, 40N60A4D PDF,ピン配置, 機能
Data Sheet
HGT1N40N60A4D
December 2001
600V, SMPS Series N-Channel IGBT with
Anti-Parallel Hyperfast Diode
The HGT1N40N60A4D is a MOS gated high voltage
switching device combining the best features of a MOSFET
and a bipolar transistor. These devices have the high input
impedance of a MOSFET and the low on-state conduction
loss of a bipolar transistor. The much lower on-state voltage
drop varies only moderately between 25oC and 150oC. This
IGBT is ideal for many high voltage switching applications
operating at high frequencies where low conduction losses
are essential. This device has been optimized for high
frequency switch mode power supplies.
Formerly Developmental Type TA49349.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGT1N40N60A4D
SOT-227
40N60A4D
NOTE: When ordering, use the entire part number.
Features
• 100kHz Operation At 390V, 22A
• 600V Switching SOA Capability
• Typical Fall Time . . . . . . . . . . . . . . . . . 55ns at TJ = 125oC
• Low Conduction Loss
Symbol
C
G
E
Packaging
JEDEC STYLE SOT-227B
GATE
EMITTER
TAB
(ISOLATED)
COLLECTOR EMITTER
Fairchild CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
©2001 Fairchild Semiconductor Corporation
HGT1N40N60A4D Rev. B
Free Datasheet http://www.datasheet4u.com/

1 Page





40N60A4D pdf, ピン配列
HGT1N40N60A4D
Electrical Specifications TJ = 25oC, Unless Otherwise Specified (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Diode Reverse Recovery Time
Thermal Resistance Junction To Case
trr
RθJC
IEC = 40A, dIEC/dt = 200A/µs
IGBT
Diode
- 48 55 ns
-
-
0.42
oC/W
- - 1.8 oC/W
NOTES:
2. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
3. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2 is the
turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in Figure 20.
Typical Performance Curves (Unless Otherwise Specified)
120
VGE = 15V
100 TJ = 150oC
80
60
40
20
0
25 50 75 100 125
TC, CASE TEMPERATURE (oC)
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
150
225
TJ = 150oC, RG = 2.2, VGE = 15V, L = 100µH
200
175
150
125
100
75
50
25
0
0 100 200 300 400 500 600
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
700
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
300
TC VGE
75oC 15V
12
VCE = 390V, RG = 2.2, TJ = 125oC
1200
10 1000
100 ISC
8 800
fMAX1 = 0.05 / (td(OFF)I + td(ON)I)
fMAX2 = (PD - PC) / (EON2 + EOFF)
PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
RØJC = 0.42oC/W, SEE NOTES
10
1
10
20
ICE, COLLECTOR TO EMITTER CURRENT (A)
100
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
6 600
tSC
4 400
2 200
10 11 12 13 14 15 16
VGE, GATE TO EMITTER VOLTAGE (V)
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
©2001 Fairchild Semiconductor Corporation
HGT1N40N60A4D Rev. B
Free Datasheet http://www.datasheet4u.com/


3Pages


40N60A4D 電子部品, 半導体
HGT1N40N60A4D
Typical Performance Curves (Unless Otherwise Specified) (Continued)
14
FREQUENCY = 1MHz
12
10
8
CIES
6
4
COES
2
CRES
0
0 10 20 30 40 50 60 70 80 90
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
100
FIGURE 17. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
2.4
DUTY CYCLE < 0.5%, VGE = 15V
PULSE DURATION = 250ms, TJ = 25oC
2.3
2.2
2.1
2.0
1.9
8
ICE = 80A
ICE = 40A
ICE = 20A
9 10 11 12 13 14 15
VGE, GATE TO EMITTER VOLTAGE (V)
16
FIGURE 18. COLLECTOR TO EMITTER ON-STATE VOLTAGE
vs GATE TO EMITTER VOLTAGE
50
DUTY CYCLE < 0.5%,
45 PULSE DURATION = 250ms
40
35 TJ = 125oC
30
25
20
15 TJ = 25oC
10
5
0
0 0.5 1.0 1.5 2.0
VEC, FORWARD VOLTAGE (V)
2.5
FIGURE 19. DIODE FORWARD CURRENT vs FORWARD
VOLTAGE DROP
120
110 dIEC/dt = 200A/µs
100 125oC trr
90
80
70
60 125oC ta
50
40
30
20
10
0
0 5 10 15
125oC tb
25oC trr
25oC ta
25oC tb
20 25 30 35
IEC, FORWARD CURRENT (A)
40
FIGURE 20. RECOVERY TIMES vs FORWARD CURRENT
70
65
60
55
50
45
40
35
30
25
20
15
10
200
125oC ta
IF = 40A, VCE = 390V
125oC tb
25oC ta
25oC tb
300 400 500 600 700 800 900
diEC/dt, RATE OF CHANGE OF CURRENT (A/µs)
1000
FIGURE 21. RECOVERY TIMES vs RATE OF CHANGE OF
CURRENT
1400
1200
1000
VCE = 390V
125oC, IF = 40A
800
125oC, IF = 20A
600
25oC, IF = 40A
400
200 25oC, IF = 20A
0
200 400 600 800 1000
diEC/dt, RATE OF CHANGE OF CURRENT (A/µs)
FIGURE 22. STORED CHARGE vs RATE OF CHANGE OF
CURRENT
©2001 Fairchild Semiconductor Corporation
HGT1N40N60A4D Rev. B
Free Datasheet http://www.datasheet4u.com/

6 Page



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部品番号部品説明メーカ
40N60A4D

HGT1N40N60A4D

Fairchild Semiconductor
Fairchild Semiconductor


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