DataSheet.jp

AP9998GS-HF の電気的特性と機能

AP9998GS-HFのメーカーはAdvanced Power Electronicsです、この部品の機能は「N-CHANNEL ENHANCEMENT MODE POWER MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 AP9998GS-HF
部品説明 N-CHANNEL ENHANCEMENT MODE POWER MOSFET
メーカ Advanced Power Electronics
ロゴ Advanced Power Electronics ロゴ 




このページの下部にプレビューとAP9998GS-HFダウンロード(pdfファイル)リンクがあります。
Total 4 pages

No Preview Available !

AP9998GS-HF Datasheet, AP9998GS-HF PDF,ピン配置, 機能
Advanced Power
Electronics Corp.
AP9998GS-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Lower Gate Charge
D
Single Drive Requirement
Fast Switching Characteristic
G
RoHS Compliant & Halogen-Free
S
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-263 package is widely preferred for commercial-industrial
surface mount applications and suited for switching power
applications.
BVDSS
RDS(ON)
ID
100V
25mΩ
44A
GD S
TO-263(S)
Absolute Maximum Ratings
Symbol
Parameter
VDS Drain-Source Voltage
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
PD@TA=25
TSTG
TJ
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating
100
+20
44
28
160
104
3.13
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W
Thermal Data
Symbol
Parameter
Rthj-c
Rthj-a
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)3
Data and specifications subject to change without notice
Value
1.2
40
Units
/W
/W
1
201105091
Free Datasheet http://www.datasheet4u.com/

1 Page





AP9998GS-HF pdf, ピン配列
150
T C =25 o C
125
100
10V
9.0V
8.0V
7.0V
75
V G =6.0V
50
25
0
0 4 8 12 16 20
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1.4
I D =1mA
1.2
1
0.8
0.6
-50 0 50 100 150
T j , Junction Temperature ( o C)
Fig 3. Normalized BVDSS v.s. Junction
Temperature
30
20
T j =150 o C
T j =25 o C
10
0
0 0.2 0.4 0.6 0.8 1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
AP9998GS-HF
100
T C = 150 o C
80
60
40
10V
9.0V
8.0V
7.0V
V G =6.0V
20
0
0 4 8 12 16
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.8
I D =24A
2.4 V G =10V
2.0
1.6
1.2
0.8
0.4
-50 0 50 100
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
150
1.8
I D =250uA
1.2
0.6
0.0
-50 0 50 100 150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
Free Datasheet http://www.datasheet4u.com/


3Pages





ページ 合計 : 4 ページ
 
PDF
ダウンロード
[ AP9998GS-HF データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
AP9998GS-HF

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power Electronics
Advanced Power Electronics


www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap