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IRF6802SDPBF の電気的特性と機能

IRF6802SDPBFのメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRF6802SDPBF
部品説明 Power MOSFET ( Transistor )
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRF6802SDPBF Datasheet, IRF6802SDPBF PDF,ピン配置, 機能
PD - 97769
IRF6802SDPbF
IRF6802SDTRPbF
DirectFET®plus Power MOSFET ‚
l RoHs Compliant Containing No Lead and Bromide 
l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible 
Typical values (unless otherwise specified)
VDSS
VGS
RDS(on)
RDS(on)
25V max ±16V max 3.2m@ 10V 4.5m@ 4.5V
l Low Package Inductance
l Optimized for High Frequency Switching 
l Ideal for CPU Core DC-DC Converters
Qg tot Qgd
8.8nC 3.1nC
Qgs2
1.1nC
Qrr
22nC
Qoss
13nC
Vgs(th)
1.6V
l Optimized for Control FET socket of Sync. Buck Converter
l Low Conduction and Switching Losses
l Compatible with existing Surface Mount Techniques 
GG
DD
l 100% Rg tested
SS
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ SX ST SA MQ MX MT
SA
MP
DirectFET®plus ISOMETRIC
MB
Description
The IRF6802SDTRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging to
achieve improved performance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET® package is
compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection
soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET®
package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6802SDTRPbF has low gate resistance and low charge along with ultra low package inductance providing significant reduction in
switching losses. The reduced losses make this product ideal for high efficiency DC-DC converters that power the latest generation of
processors operating at higher frequencies. The IRF6802SDTRPbF has been optimized for the control FET socket of synchronous buck
operating from 12 volt bus converters.
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
IDM
EAS
IAR
Gate-to-Source Voltage
eContinuous Drain Current, VGS @ 10V
eContinuous Drain Current, VGS @ 10V
fContinuous Drain Current, VGS @ 10V
gPulsed Drain Current
hSingle Pulse Avalanche Energy
ÃgAvalanche Current
Max.
25
±16
16
13
57
130
66
13
Units
V
A
mJ
A
10
ID = 16A
8
6 TJ = 125°C
4
2 TJ = 25°C
0
2 4 6 8 10 12 14 16
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
Notes:
 Click on this section to link to the appropriate technical paper.
‚ Click on this section to link to the DirectFET Website.
ƒ Surface mounted on 1 in. square Cu board, steady state.
www.irf.com
14.0
12.0
10.0
8.0
ID= 13A
VDS= 20V
VDS= 13V
VDS= 6.0V
6.0
4.0
2.0
0.0
0
5 10 15 20 25
QG Total Gate Charge (nC)
Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage
„ TC measured with thermocouple mounted to top (Drain) of part.
… Repetitive rating; pulse width limited by max. junction temperature.
† Starting TJ = 25°C, L = 0.78mH, RG = 50, IAS = 13A.
1
Free Datashee0t h3t/t2p:1///w1w2w.datasheet4u.com/

1 Page





IRF6802SDPBF pdf, ピン配列
IRF6802SDTRPbF
Absolute Maximum Ratings
PD @TA = 25°C
PD @TA = 70°C
PD @TC = 25°C
Parameter
elPower Dissipation
elPower Dissipation
fPower Dissipation
TP Peak Soldering Temperature
TJ
TSTG
Operating Junction and
Storage Temperature Range
Thermal Resistance
RJA
RJA
RJA
RJC
RJ-PCB
Parameter
elJunction-to-Ambient
jlJunction-to-Ambient
klJunction-to-Ambient
fJunction-to-Case
Junction-to-PCB Mounted
Linear Derating Factor
Max.
1.7
1.1
21
270
-40 to + 150
Typ.
–––
12.5
20
–––
1.0
0.014
Max.
72
–––
–––
5.9
–––
Units
W
°C
Units
°C/W
W/°C
100
D = 0.50
10
0.20
0.10
0.05
1
0.02
0.01
0.1
0.01 SINGLE PULSE
( THERMAL RESPONSE )
J J
1 1
R 1R 1
CiC= i=iRiiRi
R 2R 2
2 2
R 3R 3
3 3
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
R4R4 Ri (°C/W)
4 4
AA
29.131
28.050
2.9126
11.738
i (sec)
6.820693
0.918995
0.001521
0.074589
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
1 10 100
Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient ƒ
Notes:
ˆ Used double sided cooling , mounting pad with large heatsink.
‰ Mounted on minimum footprint full size board with metalized
Š Ris measured at TJ of approximately 90°C.
back and with small clip heatsink.
ƒ Surface mounted on 1 in. square Cu
(still air).
www.irf.com
‰ Mounted to a PCB with
small clip heatsink (still air)
‰ Mounted on minimum
footprint full size board with
metalized back and with small
clip heatsink (still air)
3
Free Datasheet http://www.datasheet4u.com/


3Pages


IRF6802SDPBF 電子部品, 半導体
IRF6802SDTRPbF
L
VCC
DUT
0
210K S
Fig 15a. Gate Charge Test Circuit
Id
Vgs
Vds
Vgs(th)
Qgodr
Qgd Qgs2 Qgs1
Fig 15b. Gate Charge Waveform
15V
VDS
L
VRGSG
20V
tp
D.U.T
IAS
0.01
DRIVER
+
-
VDD
A
Fig 16a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
IAS
Fig 16b. Unclamped Inductive Waveforms
VDS
VGS
RG
VGS
Pulse Width µs
Duty Factor 
RD
D.U.T.
+- VDD
Fig 17a. Switching Time Test Circuit
6
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 17b. Switching Time Waveforms
www.irf.com
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部品番号部品説明メーカ
IRF6802SDPBF

Power MOSFET ( Transistor )

International Rectifier
International Rectifier


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