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IRF6726MPBF の電気的特性と機能

IRF6726MPBFのメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRF6726MPBF
部品説明 Power MOSFET ( Transistor )
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRF6726MPBF Datasheet, IRF6726MPBF PDF,ピン配置, 機能
PD - 96121
IRF6726MPbF
IRF6726MTRPbF
l RoHS Compliant Containing No Lead and Bromide 
l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible 
l Ultra Low Package Inductance
l Optimized for High Frequency Switching 
l Ideal for CPU Core DC-DC Converters
l Optimized for both Sync.FET and some Control FET
application
l Low Conduction and Switching Losses
l Compatible with existing Surface Mount Techniques 
l 100% Rg tested
DirectFET™ Power MOSFET ‚
Typical values (unless otherwise specified)
VDSS
VGS
RDS(on)
RDS(on)
30V max ±20V max 1.3m@10V 1.9m@ 4.5V
Qg tot Qgd Qgs2 Qrr Qoss Vgs(th)
51nC 16nC 5.4nC 45nC 28nC 1.7V
MT
DirectFET™ ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ SX ST
MQ MX MT MP
Description
The IRF6726MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve
the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is
compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection
soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET pack-
age allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6726MPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of
processors operating at higher frequencies. The IRF6726MPbF has been optimized for parameters that are critical in synchronous buck
operating from 12 volt bus converters including Rds(on) and gate charge to minimize losses.
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
IDM
EAS
IAR
Gate-to-Source Voltage
eContinuous Drain Current, VGS @ 10V
eContinuous Drain Current, VGS @ 10V
fContinuous Drain Current, VGS @ 10V
gPulsed Drain Current
hSingle Pulse Avalanche Energy
ÃgAvalanche Current
Max.
30
±20
32
25
180
250
260
25
Units
V
A
mJ
A
4
ID = 32A
3
2
1
TJ = 25°C
0
05
TJ = 125°C
10 15 20
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
Notes:
 Click on this section to link to the appropriate technical paper.
‚ Click on this section to link to the DirectFET Website.
ƒ Surface mounted on 1 in. square Cu board, steady state.
www.irf.com
5.0
4.0
ID= 25A VDS= 24V
VDS= 15V
3.0
2.0
1.0
0.0
0
10 20 30 40 50 60
QG, Total Gate Charge (nC)
Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage
„ TC measured with thermocouple mounted to top (Drain) of part.
… Repetitive rating; pulse width limited by max. junction temperature.
† Starting TJ = 25°C, L = 0.82mH, RG = 25, IAS = 25A.
1
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1 Page





IRF6726MPBF pdf, ピン配列
IRF6726MPbF
Absolute Maximum Ratings
PD @TA = 25°C
PD @TA = 70°C
PD @TC = 25°C
TP
ePower Dissipation
ePower Dissipation
fPower Dissipation
Parameter
Peak Soldering Temperature
TJ
TSTG
Operating Junction and
Storage Temperature Range
Thermal Resistance
RθJA
RθJA
RθJA
RθJC
RθJ-PCB
Parameter
elJunction-to-Ambient
jlJunction-to-Ambient
klJunction-to-Ambient
flJunction-to-Case
Junction-to-PCB Mounted
Linear Derating Factor
Max.
2.8
1.8
89
270
-40 to + 150
Typ.
–––
12.5
20
–––
1.0
0.022
Max.
45
–––
–––
1.4
–––
Units
W
°C
Units
°C/W
W/°C
100
D = 0.50
10 0.20
0.10
0.05
1 0.02
0.01
0.1
0.01 SINGLE PULSE
( THERMAL RESPONSE )
τJ τJ
τ1 τ1
R 1R 1
CiC= iτ=iRi/iRi
R2R2
τ2 τ2
R 3R 3
τ3 τ3
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
R4R4 Ri (°C/W) τi (sec)
τ4 τ4
τAτA
1.1632
5.4838
21.2371
0.000194
0.045124
1.1955
17.1160 45.9
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
10 100 1000
Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient ƒ
Notes:
ˆ Used double sided cooling , mounting pad with large heatsink.
‰ Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
Š Rθ is measured at TJ of approximately 90°C.
ƒ Surface mounted on 1 in. square Cu
(still air).
www.irf.com
‰ Mounted to a PCB with
small clip heatsink (still air)
‰ Mounted on minimum
footprint full size board with
metalized back and with small
clip heatsink (still air)
3
Free Datasheet http://www.datasheet4u.com/


3Pages


IRF6726MPBF 電子部品, 半導体
IRF6726MPbF
L
VCC
DUT
0
210K S
Fig 15a. Gate Charge Test Circuit
Id
Vgs
Vds
Vgs(th)
Qgodr
Qgd Qgs2 Qgs1
Fig 15b. Gate Charge Waveform
15V
VDS
L
VRGSG
20V
tp
D.U.T
IAS
0.01
DRIVER
+
-
VDD
A
Fig 16a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
IAS
Fig 16b. Unclamped Inductive Waveforms
VDS
VGS
RG
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
D.U.T.
+- VDD
Fig 17a. Switching Time Test Circuit
6
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 17b. Switching Time Waveforms
www.irf.com
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部品番号部品説明メーカ
IRF6726MPBF

Power MOSFET ( Transistor )

International Rectifier
International Rectifier


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