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Número de pieza | IRF6724MPBF | |
Descripción | Power MOSFET ( Transistor ) | |
Fabricantes | International Rectifier | |
Logotipo | ||
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IRF6724MPbF
IRF6724MTRPbF
DirectFET Power MOSFET
l RoHs Compliant and Halogen Free
l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible
Typical values (unless otherwise specified)
VDSS
VGS
RDS(on)
RDS(on)
30V max ±20V max 1.9mΩ@ 10V 2.7mΩ@ 4.5V
l Ultra Low Package Inductance
l Optimized for High Frequency Switching
l Ideal for CPU Core DC-DC Converters
Qg tot
33nC
Qgd
10nC
Qgs2
3.9nC
Qrr
34nC
Qoss
20nC
Vgs(th)
1.8V
l Optimized for Sync. FET socket of Sync. Buck Converter
l Low Conduction and Switching Losses
l Compatible with existing Surface Mount Techniques
l 100% Rg tested
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
MX
DirectFET ISOMETRIC
SQ SX ST
MQ MX MT MP
Description
The IRF6724MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve
the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows
dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6724MPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of
processors operating at higher frequencies. The IRF6724MPbF has been optimized for parameters that are critical in synchronous buck
including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6724MPbF offers particularly low Rds(on) and high Cdv/dt
immunity for synchronous FET applications.
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
IDM
EAS
IAR
Gate-to-Source Voltage
eContinuous Drain Current, VGS @ 10V
eContinuous Drain Current, VGS @ 10V
fContinuous Drain Current, VGS @ 10V
gPulsed Drain Current
hSingle Pulse Avalanche Energy
ÃgAvalanche Current
8
ID = 27A
6
12
10 ID= 21A
8
Max.
30
±20
27
21
150
212
12
21
VDS= 24V
VDS= 15V
Units
V
A
mJ
A
4
TJ = 125°C
6
4
2
TJ = 25°C
2
0
2.0 4.0 6.0 8.0 10.0
VGS, Gate-to-Source Voltage (V)
Fig 1. Typical On-Resistance Vs. Gate Voltage
Notes:
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
www.irf.com
0
0 20 40 60 80 100
QG Total Gate Charge (nC)
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.051mH, RG = 25Ω, IAS = 21A.
1
04/30/09
Free Datasheet http://www.datasheet4u.com/
1 page 1000.0
100.0
10.0
TJ = 150°C
TJ = 25°C
TJ = -40°C
1.0
VGS = 0V
0.1
0.2 0.4 0.6 0.8 1.0 1.2
VSD, Source-to-Drain Voltage (V)
Fig 10. Typical Source-Drain Diode Forward Voltage
150
IRF6724MPbF
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
10 100µsec
10msec
1
TA = 25°C
Tj = 150°C
Single Pulse
0.1
0.1 1.0
1msec
10.0 100.0
VDS , Drain-toSource Voltage (V)
Fig11. Maximum Safe Operating Area
2.5
2.0
100 ID = 100µA
1.5
50
1.0
0
25 50 75 100 125 150
TC , Case Temperature (°C)
Fig 12. Maximum Drain Current vs. Case Temperature
50
40
30
0.5
-75 -50 -25 0 25 50 75 100 125 150
TJ , Junction Temperature ( °C )
Fig 13. Typical Threshold Voltage vs. Junction
Temperature
ID
TOP 7.2A
8.4A
BOTTOM 21A
20
10
www.irf.com
0
25
50 75 100 125 150
Starting TJ, Junction Temperature (°C)
Fig 14. Maximum Avalanche Energy Vs. Drain Current
5
Free Datasheet http://www.datasheet4u.com/
5 Page |
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PDF Descargar | [ Datasheet IRF6724MPBF.PDF ] |
Número de pieza | Descripción | Fabricantes |
IRF6724MPBF | Power MOSFET ( Transistor ) | International Rectifier |
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