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IRF6720S2TRPBF の電気的特性と機能

IRF6720S2TRPBFのメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRF6720S2TRPBF
部品説明 Power MOSFET ( Transistor )
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRF6720S2TRPBF Datasheet, IRF6720S2TRPBF PDF,ピン配置, 機能
PD - 97315
IRF6720S2TRPbF
IRF6720S2TR1PbF
l RoHS Compliant Containing No Lead and Bromide 
l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible 
l Ultra Low Package Inductance
l Optimized for High Frequency Switching 
l Ideal for CPU Core DC-DC Converters
l Optimized for Control FET Application
l Compatible with existing Surface Mount Techniques 
l 100% Rg tested
DirectFET™ Power MOSFET ‚
Typical values (unless otherwise specified)
VDSS
VGS
RDS(on)
RDS(on)
30V max ±20V max 6.0m@ 10V 9.8m@ 4.5V
Qg tot Qgd Qgs2 Qrr Qoss Vgs(th)
7.9nC 2.8nC 0.9nC 14nC 5.1nC 2.0V
Applicable DirectFET Outline and Substrate Outline 
S1 DirectFET™ ISOMETRIC
S1 S2 SB
M2 M4
L4 L6 L8
Description
The IRF6720S2PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve
improved performance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with
existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering tech-
niques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual
sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6720S2PbF has low gate resistance and low charge along with ultra low package inductance providing significant reduction in
switching losses. The reduced losses make this product ideal for high efficiency DC-DC converters that power the latest generation of
processors operating at higher frequencies. The IRF6720S2PbF has been optimized for the control FET socket of synchronous buck oper-
ating from 12 volt bus converters.
Absolute Maximum Ratings
Parameter
Max.
Units
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
IDM
EAS
IAR
Drain-to-Source Voltage
Gate-to-Source Voltage
eContinuous Drain Current, VGS @ 10V
eContinuous Drain Current, VGS @ 10V
fContinuous Drain Current, VGS @ 10V
gPulsed Drain Current
hSingle Pulse Avalanche Energy
ÃgAvalanche Current
30 V
±20
11
9.2 A
35
92
12 mJ
8.8 A
20 12.0
ID = 11A
10.0 ID= 8.8A
VDS= 24V
16 8.0 VDS= 15V
12
8
TJ = 25°C
4
05
TJ = 125°C
10 15 20
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
Notes:
 Click on this section to link to the appropriate technical paper.
‚ Click on this section to link to the DirectFET Website.
ƒ Surface mounted on 1 in. square Cu board, steady state.
www.irf.com
6.0
4.0
2.0
0.0
0 2 4 6 8 10 12 14 16 18 20
QG Total Gate Charge (nC)
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
„ TC measured with thermocouple mounted to top (Drain) of part.
… Repetitive rating; pulse width limited by max. junction temperature.
† Starting TJ = 25°C, L = 0.31mH, RG = 25, IAS = 8.8A.
1
Free Datasheet http://www.da0ta4sh/0ee7t4/u0.8com/

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IRF6720S2TRPBF pdf, ピン配列
IRF6720S2TR/TR1PbF
Absolute Maximum Ratings
PD @TA = 25°C
PD @TA = 70°C
PD @TC = 25°C
TP
TJ
TSTG
ePower Dissipation
ePower Dissipation
fPower Dissipation
Parameter
Peak Soldering Temperature
Operating Junction and
Storage Temperature Range
Thermal Resistance
RθJA
RθJA
RθJA
RθJC
RθJ-PCB
Parameter
elJunction-to-Ambient
jlJunction-to-Ambient
klJunction-to-Ambient
flJunction-to-Case
Junction-to-PCB Mounted
Linear Derating Factor
Max.
1.7
1.2
17
270
-55 to + 175
Typ.
–––
12.5
20
–––
1.0
0.012
Max.
86
–––
–––
8.6
–––
Units
W
°C
Units
°C/W
W/°C
100
D = 0.50
10
1
0.1
0.01
1E-006
0.20
0.10
0.05
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Ri (°C/W) τi (sec)
R1R1
R2R2
R3R3
R4R4
R5R5
2.676
0.00017
τJ τJ
τ1 τ1
τAτA 9.578
0.007941
τ2 τ2
τ3 τ3
τ4 τ4
τ5 τ5
34.880 0.52375
Ci= τi/Ri
Ci= τi/Ri
22.105
16.766
4.978
84
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
1E-005 0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
10 100 1000
Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 
Notes:
ƒ Surface mounted on 1 in. square Cu board, steady state.
‰ Mounted on minimum footprint full size board with metalized
„ TC measured with thermocouple incontact with top (Drain) of part. back and with small clip heatsink.
ˆ Used double sided cooling, mounting pad with large heatsink.
Š Rθ is measured at TJ of approximately 90°C.
ƒ Surface mounted on 1 in. square Cu
board (still air).
www.irf.com
‰ Mounted on minimum footprint full size board with metalized
back and with small clip heatsink. (still air)
3
Free Datasheet http://www.datasheet4u.com/


3Pages


IRF6720S2TRPBF 電子部品, 半導体
IRF6720S2TR/TR1PbF
100
Duty Cycle = Single Pulse
10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming DTj = 150°C and
Tstart =25°C (Single Pulse)
1 0.01
0.05
0.10
0.1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 25°C
and Tstart = 150°C.
0.01
1.0E-06
1.0E-05
1.0E-04
tav (sec)
1.0E-03
1.0E-02
1.0E-01
Fig 16. Typical Avalanche Current vs.Pulsewidth
80
TOP
Single Pulse
70 BOTTOM 1.0% Duty Cycle
ID = 8.8A
60
50
40
30
20
10
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Fig 17. Maximum Avalanche Energy
vs. Temperature
Notes on Repetitive Avalanche Curves , Figures 16, 17:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 19a, 19b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 16, 17).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
6 www.irf.com
Free Datasheet http://www.datasheet4u.com/

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IRF6720S2TRPBF

Power MOSFET ( Transistor )

International Rectifier
International Rectifier


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