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IRF3546 の電気的特性と機能

IRF3546のメーカーはInternational Rectifierです、この部品の機能は「60A Dual Integrated Power Block」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRF3546
部品説明 60A Dual Integrated Power Block
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRF3546 Datasheet, IRF3546 PDF,ピン配置, 機能
  60A Dual Integrated Power Block  IRF3546
FEATURES
Peak efficiency up to 94% at 1.2V
Two pairs of control and synchronous
MOSFETs in a single PQFN package
Proprietary package minimizes package
parasitic and simplifies PCB layout
Input voltage (VIN) range of 4.5V to 21V
Output current capability of 30A/phase
Ultra-low Rg MOSFET technology minimizes
switching losses for optimized high frequency
performance
Synchronous MOSFET with monolithic
integrated Schottky diode reduces dead-time
and diode reverse recovery losses
Efficient dual side cooling
Small 6mm x 8 mm x 0.9mm PQFN package
Lead-free RoHS compliant package 
APPLICATIONS
High frequency, low profile DC-DC converters
Voltage Regulators for CPUs, GPUs, and DDR
memory arrays
 
DESCRIPTION
The IRF3546 dual integrated Power Block co-
packages two pairs of high performance control and
synchronous MOSFETs and is ideal for use in high-
density two-phase synchronous buck converters. It is
optimized internally for PCB layout, heat transfer and
package inductance. Coupled with the latest
generation of IR MOSFET technology, the IRF3546
provides higher efficiency at low output voltages
required by cutting edge CPU, GPU and DDR
memory designs.
High switching frequency enables high performance
transient response, allowing miniaturization of output
inductors, as well as input and output capacitors while
maintaining industry leading efficiency. Integrating two
phases in one package while still providing superior
efficiency and thermal performance, the IRF3546
enables smallest size solutions.
The IRF3546 uses IR’s latest generation of low
voltage MOSFET technology characterized by ultra-
low gate resistance (Rg, <0.5) and charge that result
in minimized switching losses. The synchronous
MOSFET optimizes conduction losses and features a
monolithic integrated Schottky to significantly reduce
dead-time and diode conduction and reverse recovery
losses.
The IRF3546 is optimized specifically for CPU core
power delivery in 12V input applications like servers,
certain notebooks, GPU and DDR memory designs.
ORDERING INFORMATION
Base Part Number Package Type
IRF3546
PQFN 6 mm x 8 mm
Standard Pack
Form
Quantity
Tape and Reel
3000
Orderable Part Number
IRF3546MTRPBF
  1 www.irf.com | © 2013 International Rectifier
May 29, 2013 | Final
Free Datasheet http://www.datasheet4u.com/

1 Page





IRF3546 pdf, ピン配列
 
TYPICAL APPLICATION
60A Dual Integrated Power Block  IRF3546
IRF3546
Q1
GATEH1
7
GATEL1
37
Q2
PGND
8, 42
GATEH2
9
GATEL2
18
Q3
Q4
VIN1
1, 40, 41
C2
0.1uF
SW1
2936
C1
10uF x2
L1
150nH
PGND
38, 39
VIN2
1517
C5
0.1uF
C4
10uF x2
SW2
2128
L2
150nH
PGND
19, 20
Figure 3: High Density Two Phase Voltage Regulator
VOUT1
C3
22uF x5
VOUT2
C6
22uF x5
  3 www.irf.com | © 2013 International Rectifier
May 29, 2013 | Final
Free Datasheet http://www.datasheet4u.com/


3Pages


IRF3546 電子部品, 半導体
  60A Dual Integrated Power Block 
ELECTRICAL SPECIFICATIONS
IRF3546
The electrical characteristics involve the spread of values guaranteed within the recommended operating
conditions. Typical values represent the median values, which are related to 25°C.
ELECTRICAL CHARACTERISTICS
Efficiency
PARAMETER
Power Block per-channel Peak Efficiency
Control MOSFETs (Q1 and Q3)
Drain-to-Source On-Resistance
Drain-to-Source On-Resistance
SYMBOL
CONDITIONS
Note 2
η
Note 3
RDS(ON)_4.5V_25°C
RDS(ON)_10V_25°C
VGS=4.5V, ID=13A, TJ=25°C
VGS=10V, ID=27A, TJ=25°C
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage Current
Gate-to-Source Reverse Leakage Current
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 +Qgd )
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
BVDSS
BVDSS / TJ
IDSS
IGSS
IGSS
VGS(th)
VGS(th)
Qg
Qgs1
Qgs2
Qgd
Qgodr
QSW
Qoss
Rg
td(on)
tr
td
tf
Ciss
Coss
Crss
VSD
trr
Qrr
VGS=0V, ID=250uA, TJ=25°C
TJ=25°C -125°C, Note 1
VDS=20V, VGS=0V, TJ=25°C
VGS=16V
VGS=-16V
VDS= VGS, ID=35uA
VDS= VGS, ID=35uA
VDS= 13V, VGS=4.5V, ID=13A,
Note 1
VDS= 13V, VGS=4.5V, ID=13A
VDS= 13V, VGS=4.5V, ID=13A
VDS= 13V, VGS=4.5V, ID=13A
VDS= 13V, VGS=4.5V, ID=13A
VDS= 13V, VGS=4.5V, ID=13A
VDS= 16V, VGS=0V
VDD= 13V, VGS=4.5V, ID=13A,
RG=1.8
VDD= 13V, VGS=4.5V, ID=13A,
RG=1.8
VDD= 13V, VGS=4.5V, ID=13A,
RG=1.8
VDD= 13V, VGS=4.5V, ID=13A,
RG=1.8
VGS= 0V, VDS=13V, f=1.0MHz
VGS= 0V, VDS=13V, f=1.0MHz
VGS= 0V, VDS=13V, f=1.0MHz
VGS=0V, IS=13A, TJ=25°C
TJ=25°C, IF=30A, VDD=13V,
di/dt=200A/us, Note 1
TJ=25°C, IF=30A, VDD=13V,
di/dt=200A/us, Note 1
  6 www.irf.com | © 2013 International Rectifier
MIN
25
1.1
0.72
TYP MAX UNIT
94 %
93 %
4.1
3.2
0.02
1.6
-5.7
9.7
2.3
1.8
3.1
2.9
4.9
13
0.6
7.5
12
6.7
4.2
1310
380
90
0.80
15
10
4.8
3.9
1
100
-100
2.1
15
m
m
V
V/°C
μA
nA
nA
V
mV/°C
nC
nC
nC
nC
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
0.88 V
23 ns
15 nC
May 29, 2013 | Final
Free Datasheet http://www.datasheet4u.com/

6 Page



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部品番号部品説明メーカ
IRF3546

60A Dual Integrated Power Block

International Rectifier
International Rectifier


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