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Datasheet 08N50E PDF ( 特性, スペック, ピン接続図 )

部品番号 08N50E
部品説明 FMP08N50E
メーカ Fuji Electric
ロゴ Fuji Electric ロゴ 
プレビュー
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08N50E Datasheet, 08N50E PDF,ピン配置, 機能
FMP08N50E
Super FAP-E3 series
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Features
Maintains both low power loss and low noise
Lower RDS(on) characteristic
More controllable switching dv/dt by gate resistance
Smaller VGS ringing waveform during switching
Narrow band of the gate threshold voltage (3.0±0.5V)
High avalanche durability
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Outline Drawings [mm]
TO-220AB
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
Maximum Ratings and Characteristics
Absolute Maximum Ratings at Tc=25°C (unless otherwise specified)
Description
Drain-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Gate-Source Voltage
Repetitive and Non-Repetitive Maximum Avalanche Current
Non-Repetitive Maximum Avalanche Energy
Repetitive Maximum Avalanche Energy
Peak Diode Recovery dV/dt
Peak Diode Recovery -di/dt
Symbol
VDS
VDSX
ID
IDP
VGS
IAR
EAS
EAR
dV/dt
-di/dt
Maximum Power Dissipation
PD
Operating and Storage Temperature range
Tch
Tstg
Characteristics
500
500
±7.5
±30
±30
7.5
301.1
3.7
5.9
100
2.02
105
150
-55 to +150
Unit
V
V
A
A
V
A
mJ
mJ
kV/µs
A/µs
W
°C
°C
Remarks
VGS = -30V
Note*1
Note*2
Note*3
Note*4
Note*5
Ta=25°C
Tc=25°C
Electrical Characteristics at Tc=25°C (unless otherwise specified)
Description
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Drain-Source On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche Capability
Diode Forward On-Voltage
Reverse Recovery Time
Reverse Recovery Charge
Symbol
BVDSS
VGS (th)
IDSS
IGSS
RDS (on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
IAV
VSD
trr
Qrr
Conditions
ID=250µA, VGS=0V
ID=250µA, VDS=VGS
VDS=500V, VGS=0V
VDS=400V, VGS=0V
VGS=±30V, VDS=0V
ID=3.8A, VGS=10V
ID=3.8A, VDS=25V
VDS=25V
VGS = 0V
f=1MHz
Vcc = 30 0V
VGS=10V
ID=3.8A
RGS=18Ω
Vcc =250V
ID=7.5A
VGS=10V
L=3.93mH, Tch=25°C
IF=7.5A, VGS=0V, Tch=25°C
IF=7.5A, VGS=0V
-di/dt=100A/µs, Tch=25°C
Tch=25°C
Tch=125°C
min.
500
2.5
-
-
-
-
4
-
-
-
-
-
-
-
-
-
-
7.5
-
-
-
typ.
-
3.0
-
-
10
0.68
8
1100
100
7.5
17
8.0
80
15
35
9.0
10
-
0.90
0.35
3.5
Thermal Characteristics
Description
Thermal resistance
Symbol
Rth (ch-c)
Rth (ch-a)
Test Conditions
Channel to Case
Channel to Ambient
min.
typ.
Note *1 : Tch≤150°C
Note *2 : Stating Tch=25°C, IAS=3.0A, L=61.3mH, Vcc=50V, RG=50Ω
EAS limited by maximum channel temperature and avalanche current.
See to 'Avalanche Energy' graph.
Note *3 : Repetitive rating : Pulse width limited by maximum channel temperature.
See to the 'Transient Themal impeadance' graph.
Note *4 : IF≤-ID, -di/dt=100A/µs, Vcc≤BVDSS, Tch≤150°C.
Note *5 : IF≤-ID, dv/dt=5.9kV/µs, Vcc≤BVDSS, Tch≤150°C.
max.
-
3.5
25
250
100
0.79
-
1650
150
11
26
12
120
23
53
14
15
-
1.35
-
-
max.
1.19
62.0
Unit
V
V
µA
nA
S
pF
ns
nC
A
V
µs
µC
Unit
°C/W
°C/W
1
Free Datasheet http://www.datasheet4u.com/

1 Page



08N50E pdf, ピン配列
FMP08N50E
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=3.8A,VGS=10V
2.5
2.0
1.5
1.0 max.
typ.
0.5
0.0
-50
-25
0
25 50 75
Tch [°C]
100 125 150
Typical Gate Charge Characteristics
VGS=f(Qg):ID=7.5A,Tch=25 °C
14
12
Vcc= 100V
250V
10 400V
8
6
4
2
0
0 5 10 15 20 25 30 35 40 45 50
Qg [nC]
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80 µs pulse test,Tch=25 °C
100
10
1
FUJI POWER MOSFET
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250µA
6
5
4
max.
3 typ.
min.
2
1
0
-50 -25 0
25 50 75 100 125 150
Tch [°C]
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
104
103 Ciss
102
Coss
101
Crss
100
10-1
100 101
VDS [V]
102
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=300V,VGS=10V,RG=18 Ω
103
tf
103
td(off)
102
td(on)
101
tr
0.1
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00
VSD [V]
3
100
10-1
100
ID [A]
101
Free Datasheet http://www.datasheet4u.com/


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