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IS42SM16800E PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IS42SM16800E
部品説明 128Mb Mobile Synchronous DRAM
メーカ ISSI
ロゴ ISSI ロゴ 



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IS42SM16800E Datasheet, IS42SM16800E PDF,ピン配置, 機能
IS42SM81600E / IS42SM16800E / IS42SM32400E
IS42RM81600E / IS42RM16800E / IS42RM32400E
16Mx8, 8Mx16, 4Mx32
128Mb Mobile Synchronous DRAM
FEATURES
• Fully synchronous; all signals referenced to a positive
clock edge
• Internal bank for hiding row access and precharge
• Programmable CAS latency: 2, 3
• Programmable Burst Length: 1, 2, 4, 8, and Full Page
• Programmable Burst Sequence:
• Sequential and Interleave
• Auto Refresh (CBR)
• TCSR (Temperature Compensated Self Refresh)
• PASR (Partial Arrays Self Refresh): 1/16, 1/8, 1/4, 1/2,
and Full
• Deep Power Down Mode (DPD)
• Driver Strength Control (DS): 1/4, 1/2, and Full
OPTIONS
• Configurations:
- 16M x 8
- 8M x 16
- 4M x 32
• Power Supply
IS42SMxxx – Vdd/Vddq = 3.3 V
IS42RMxxx – Vdd/Vddq = 2.5 V
• Packages:
x8 / x16 –TSOP II (54), BGA (54) [x16 only]
x32 – TSOP II (86), BGA (90)
• Temperature Range:
Commercial (0°C to +70°C)
Industrial (–40 ºC to 85 ºC)
APRIL 2011
DESCRIPTION
ISSI's 128Mb Mobile Synchronous DRAM achieves high-
speed data transfer using pipeline architecture. All input
and output signals refer to the rising edge of the clock
input. Both write and read accesses to the SDRAM are
burst oriented. The 128Mb Mobile Synchronous DRAM
is designed to minimize current consumption making it
ideal for low-power applications. Both TSOP and BGA
packages are offered, including industrial grade products.
KEY TIMING PARAMETERS
Parameter
CLK Cycle Time
CAS Latency = 3
CAS Latency = 2
CLK Frequency
CAS Latency = 3
CAS Latency = 2
Access Time from CLK
CAS Latency = 3
CAS Latency = 2
-6
6
10
166
100
5.4
8
-7 -75E Unit
7 ns
10 7.5 ns
143 Mhz
100 133 Mhz
5.4 ns
8 5.4 ns
ADDRESSING TABLE
Parameter
Configuration
Refresh Count
Row Addressing
Column Addressing
Bank Addressing
Precharge Addressing
16M x 8
4M x 8 x 4 banks
4K/64ms
A0-A11
A0-A9
BA0, BA1
A10
8M x 16
2M x 16 x 4 banks
4K/64ms
A0-A11
A0-A8
BA0, BA1
A10
4M x 32
1M x 32 x 4 banks
4K/64ms
A0-A11
A0-A7
BA0, BA1
A10
Copyright © 2011 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no
liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on
any published information and before placing orders for products.
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reasonably be ex-
pected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Integrated Silicon
Solution, Inc. receives written assurance to its satisfaction, that:
a.) the risk of injury or damage has been minimized;
b.) the user assume all such risks; and
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances
Integrated Silicon Solution, Inc. - www.issi.com
Rev.  B
04/15/2011
1
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128Mb Mobile Synchronous DRAM

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