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IRFR7440PBFのメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET ( Transistor )」です。 |
部品番号 | IRFR7440PBF |
| |
部品説明 | Power MOSFET ( Transistor ) | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRFR7440PBFダウンロード(pdfファイル)リンクがあります。 Total 11 pages
IRFR7440PbF
IRFU7440PbF
Applications
l Brushed Motor drive applications
l BLDC Motor drive applications
l PWM Inverterized topologies
l Battery powered circuits
l Half-bridge and full-bridge topologies
l Electronic ballast applications
l Synchronous rectifier applications
l Resonant mode power supplies
l OR-ing and redundant power switches
l DC/DC and AC/DC converters
G
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dv/dt and dI/dt Capability
l Lead-Free
l RoHS Compliant containing no Lead, no Bromide,
and no Halogen
HEXFET® Power MOSFET
D VDSS
40V
RDS(on) typ.
max.
ID (Silicon Limited)
1.9mΩ
2.4mΩ
c180A
S
ID (Package Limited)
90A
DD
S
G
D-Pak
IRFR7440TRPbF
S
D
G
I-Pak
IRFU7440TRPbF
G
Gate
D
Drain
S
Source
Ordering Information
Orderable part number Package Type
IRFR7440PbF
IRFR7440TRPbF
IRFU7440PbF
D-PAK
D-PAK
I-PAK
Standard Pack
Form
Quantity
Tube/Bulk
75
Tape and Reel
2000
Tube/Bulk
75
Complete Part Number
IRFR7440PbF
IRFR7440TRPbF
IRFU7440PbF
8
ID = 90A
6
4
TJ = 125°C
2
TJ = 25°C
0
4
8 12 16 20
VGS, Gate-to-Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
1 www.irf.com © 2012 International Rectifier
180
160
140
120
100
80
60
40
20
0
25
LIMITED BY PACKAGE
50 75 100 125 150
TC, Case Temperature (°C)
175
Fig 2. Maximum Drain Current vs. Case Temperature
October 17, 2012
Free Datasheet http://www.datasheet4u.com/
1 Page IRFR/U7440PbF
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min.
gfs Forward Transconductance
280
Qg
Qgs
Qgd
Qsync
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss eff. (ER)
Coss eff. (TR)
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Qg - Qgd)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance (Energy Related)
Effective Output Capacitance (Time Related)
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
89
26
26
63
11
39
51
34
4610
690
460
855
1210
Max. Units
Conditions
––– S VDS = 10V, ID = 90A
134 nC ID =90A
Ãg––– VDS =20V
––– VGS = 10V
––– ID = 90A, VDS =0V, VGS = 10V
––– ns VDD = 20V
––– ID = 30A
g––– RG = 2.7Ω
––– VGS = 10V
––– pF VGS = 0V
––– VDS = 25V
––– ƒ = 1.0 MHz, See Fig. 5
i––– VGS = 0V, VDS = 0V to 32V See Fig. 12
h––– VGS = 0V, VDS = 0V to 32V
Diode Characteristics
Symbol
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
Ãd(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IRRM Reverse Recovery Current
Min.
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
0.9
34
35
33
34
1.8
Max. Units
Conditions
180 A MOSFET symbol
D
showing the
760 A integral reverse
G
p-n junction diode.
S
1.3 V TJ = 25°C, IS = 90A, VGS = 0V
––– ns TJ = 25°C
VR = 34V,
––– TJ = 125°C
––– nC TJ = 25°C
gIF = 90A
di/dt = 100A/μs
––– TJ = 125°C
––– A TJ = 25°C
3 www.irf.com © 2012 International Rectifier
October 17, 2012
Free Datasheet http://www.datasheet4u.com/
3Pages IRFR/U7440PbF
10
1
D = 0.50
0.20
0.1 0.10
0.05
0.01
0.001
1E-006
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
0.0001
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01 0.1
t1 , Rectangular Pulse Duration (sec)
Fig 14. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔTj = 150°C and
Tstart =25°C (Single Pulse)
100
10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔΤ j = 25°C and
1 Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
tav (sec)
Fig 15. Typical Avalanche Current vs.Pulsewidth
1.0E-02
1.0E-01
180 Notes on Repetitive Avalanche Curves , Figures 15, 16:
TOP
Single Pulse
(For further info, see AN-1005 at www.irf.com)
160
BOTTOM 1.0% Duty Cycle
1. Avalanche failures assumption:
140 ID = 90A
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded.
120 3. Equation below based on circuit and waveforms shown in Figures 23a, 23b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
100 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
80 6. Iav = Allowable avalanche current.
60
7. ΔT = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 15, 16).
40
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
20 ZthJC(D, tav) = Transient thermal resistance, see Figures 14)
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Fig 16. Maximum Avalanche Energy vs. Temperature
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
6 www.irf.com © 2012 International Rectifier
October 17, 2012
Free Datasheet http://www.datasheet4u.com/
6 Page | |||
ページ | 合計 : 11 ページ | ||
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部品番号 | 部品説明 | メーカ |
IRFR7440PBF | Power MOSFET ( Transistor ) | International Rectifier |
IRFR7440PbF | HEXFET Power MOSFET | International Rectifier |