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IRFB3006PBFのメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET ( Transistor )」です。 |
部品番号 | IRFB3006PBF |
| |
部品説明 | Power MOSFET ( Transistor ) | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRFB3006PBFダウンロード(pdfファイル)リンクがあります。 Total 8 pages
PD -97143
IRFB3006PbF
Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
G
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
HEXFET® Power MOSFET
D VDSS
RDS(on) typ.
max.
60V
2.1m:
2.5m:
ID (Silicon Limited) 270A c
S ID (Package Limited) 195A
D
DS
G
TO-220AB
G
G ate
D
Drain
S
Source
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Wire Bond Limited)
Pulsed Drain Current d
Maximum Power Dissipation
Linear Derating Factor
VGS Gate-to-Source Voltage
dv/dt
Peak Diode Recovery f
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
EAS (Thermally limited)
Single Pulse Avalanche Energy e
IAR Avalanche Current d
EAR Repetitive Avalanche Energy g
Thermal Resistance
Symbol
Parameter
RθJC
RθCS
RθJA
Junction-to-Case k
Case-to-Sink, Flat Greased Surface
Junction-to-Ambient jk
www.irf.com
Max.
270c
190 c
195
1080
375
2.5
± 20
10
-55 to + 175
300
10lbxin (1.1Nxm)
Units
A
W
W/°C
V
V/ns
°C
320
See Fig. 14, 15, 22a, 22b,
mJ
A
mJ
Typ.
–––
0.50
–––
Max.
Units
0.4
––– °C/W
62
1
Free Datasheet http://www1.0da/6ta/s0he8et4u.com/
1 Page 1000
100
TOP
BOTTOM
VGS
15V
10V
8.0V
6.0V
5.0V
4.5V
4.0V
3.5V
10
1
0.1
3.5V
≤ 60μs PULSE WIDTH
Tj = 25°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
1000
100 TJ = 175°C
TJ = 25°C
10
1
2.0
VDS = 25V
≤ 60μs PULSE WIDTH
3.0 4.0 5.0 6.0
VGS, Gate-to-Source Voltage (V)
7.0
Fig 3. Typical Transfer Characteristics
16000
12000
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
8000
4000
Coss
Crss
0
1 10
100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
www.irf.com
IRFB3006PbF
1000
100
TOP
BOTTOM
VGS
15V
10V
8.0V
6.0V
5.0V
4.5V
4.0V
3.5V
3.5V
10
0.1
≤ 60μs PULSE WIDTH
Tj = 175°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
2.5
ID = 170A
VGS = 10V
2.0
1.5
1.0
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance vs. Temperature
16
ID= 170A
VDS= 48V
12 VDS= 30V
8
4
0
0 40 80 120 160 200 240 280
QG Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
3
Free Datasheet http://www.datasheet4u.com/
3Pages IRFB3006PbF
4.0
ID = 1.0A
3.5 ID = 1.0mA
ID = 250μA
3.0
2.5
2.0
1.5
1.0
-75 -50 -25 0 25 50 75 100 125 150 175
TJ , Temperature ( °C )
Fig 16. Threshold Voltage Vs. Temperature
20
16
12
8
IF = 112A
4 VR = 51V
TJ = 125°C
TJ = 25°C
0
100 200 300 400 500 600 700 800
dif / dt - (A / μs)
Fig. 17 - Typical Recovery Current vs. dif/dt
20 700
600
16
500
12 400
8
IF = 170A
4 VR = 51V
TJ = 125°C
TJ = 25°C
0
100 200 300 400 500 600 700 800
dif / dt - (A / μs)
Fig. 18 - Typical Recovery Current vs. dif/dt
700
300
200 IF = 112A
VR = 51V
100 TJ = 125°C
TJ = 25°C
0
100 200 300 400 500 600 700 800
dif / dt - (A / μs)
Fig. 19 - Typical Stored Charge vs. dif/dt
600
500
400
300
200 IF = 170A
VR = 51V
100 TJ = 125°C
TJ = 25°C
0
100 200 300 400 500 600 700 800
dif / dt - (A / μs)
Fig. 20 - Typical Stored Charge vs. dif/dt
6 www.irf.com
Free Datasheet http://www.datasheet4u.com/
6 Page | |||
ページ | 合計 : 8 ページ | ||
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部品番号 | 部品説明 | メーカ |
IRFB3006PBF | Power MOSFET ( Transistor ) | International Rectifier |