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IRFB3004PBF の電気的特性と機能

IRFB3004PBFのメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRFB3004PBF
部品説明 Power MOSFET ( Transistor )
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRFB3004PBF Datasheet, IRFB3004PBF PDF,ピン配置, 機能
Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
G
D
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
S
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
D
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
DS
G
TO-220AB
IRFB3004PbF
PD - 97377
IRFB3004PbF
IRFS3004PbF
IRFSL3004PbF
HEXFET® Power MOSFET
VDSS
RDS(on)
typ.
max.
ID (Silicon Limited)
ID (Package Limited)
40V
1.4m
1.75m
340Ac
195A
DD
S
G
D2Pak
IRFS3004PbF
S
GD
TO-262
IRFSL3004PbF
G
G ate
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Wire Bond Limited)
IDM
PD @TC = 25°C
Pulsed Drain Current d
Maximum Power Dissipation
Linear Derating Factor
VGS Gate-to-Source Voltage
dv/dt
Peak Diode Recovery f
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
EAS (Thermally limited)
Single Pulse Avalanche Energy e
IAR Avalanche Current d
EAR Repetitive Avalanche Energy d
Thermal Resistance
Symbol
RθJC
RθCS
RθJA
RθJA
Parameter
Junction-to-Case kl
Case-to-Sink, Flat Greased Surface, TO-220
Junction-to-Ambient, TO-220
Junction-to-Ambient (PCB Mount) , D2Pak j
www.irf.com
D
Drain
Max.
340c
240c
195
1310
380
2.5
± 20
4.4
-55 to + 175
300
10lbfxin (1.1Nxm)
S
Source
Units
A
W
W/°C
V
V/ns
°C
300
See Fig. 14, 15, 22a, 22b
mJ
A
mJ
Typ.
–––
0.50
–––
–––
Max.
0.40
–––
62
40
Units
°C/W
1
Free Datasheet http://ww0w2./d2at6a/s0he9et4u.com/

1 Page





IRFB3004PBF pdf, ピン配列
10000
1000
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
4.8V
4.5V
100 4.5V
10
0.1
60µs PULSE WIDTH
Tj = 25°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
1000
100
TJ = 175°C
10
TJ = 25°C
1
VDS = 25V
60µs PULSE WIDTH
0.1
12345678
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
100000
10000
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
1000
Crss
100
1
10 100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
www.irf.com
IRFB/S/SL3004PbF
10000
1000
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
4.8V
4.5V
4.5V
100
10
0.1
60µs PULSE WIDTH
Tj = 175°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
2.0
ID = 195A
VGS = 10V
1.5
1.0
0.5
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance vs. Temperature
14.0
12.0
ID= 187A
10.0
8.0
VDS= 32V
VDS= 20V
6.0
4.0
2.0
0.0
0
50 100 150 200
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
3
Free Datasheet http://www.datasheet4u.com/


3Pages


IRFB3004PBF 電子部品, 半導体
IRFB/S/SL3004PbF
4.5
4.0
3.5
3.0
2.5 ID = 250µA
2.0
ID = 1.0mA
ID = 1.0A
1.5
1.0
-75 -50 -25 0 25 50 75 100 125 150 175 200
TJ , Temperature ( °C )
Fig 16. Threshold Voltage vs. Temperature
10
IF = 78A
9 VR = 34V
8 TJ = 25°C
TJ = 125°C
7
6
5
4
3
2
100 200 300 400 500
diF /dt (A/µs)
Fig. 17 - Typical Recovery Current vs. dif/dt
11
10 IF = 117A
9
VR = 34V
TJ = 25°C
8 TJ = 125°C
7
6
5
4
3
2
1
100 200 300 400 500
diF /dt (A/µs)
Fig. 18 - Typical Recovery Current vs. dif/dt
350
IF = 78A
300 VR = 34V
TJ = 25°C
250 TJ = 125°C
200
150
100
50
100 200 300 400 500
diF /dt (A/µs)
Fig. 19 - Typical Stored Charge vs. dif/dt
400
IF = 117A
350 VR = 34V
300 TJ = 25°C
TJ = 125°C
250
200
150
100
50
0
100
200 300 400
diF /dt (A/µs)
500
Fig. 20 - Typical Stored Charge vs. dif/dt
6 www.irf.com
Free Datasheet http://www.datasheet4u.com/

6 Page



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部品番号部品説明メーカ
IRFB3004PBF

Power MOSFET ( Transistor )

International Rectifier
International Rectifier


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