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IRF7821PBFのメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET ( Transistor )」です。 |
部品番号 | IRF7821PBF |
| |
部品説明 | Power MOSFET ( Transistor ) | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRF7821PBFダウンロード(pdfファイル)リンクがあります。 Total 10 pages
Applications
l High Frequency Point-of-Load
Synchronous Buck Converter for
Applications in Networking &
Computing Systems.
l Lead-Free
Benefits
l Very Low RDS(on) at 4.5V VGS
l Low Gate Charge
l Fully Characterized Avalanche Voltage
and Current
VDSS
30V
PD - 95213A
IRF7821PbF
HEXFET® Power MOSFET
RDS(on) max
Qg(typ.)
9.1mW@VGS= 10V 9.3nC
S1
S2
S3
G4
AA
8D
7D
6D
5D
Top View
SO-8
Absolute Maximum Ratings
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cPulsed Drain Current
fPower Dissipation
fPower Dissipation
TJ
TSTG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Thermal Resistance
Parameter
gRθJL Junction-to-Drain Lead
fgRθJA Junction-to-Ambient
Notes through
are on page 10
www.irf.com
Max.
30
± 20
13.6
11
100
2.5
1.6
0.02
-55 to + 155
Units
V
A
W
W/°C
°C
Typ.
–––
–––
Max.
20
50
Units
°C/W
1
05/23/07
Free Datasheet http://www.datasheet4u.com/
1 Page IRF7821PbF
100
VGS
TOP
10V
4.5V
3.7V
3.5V
3.3V
3.0V
10 2.7V
BOTTOM 2.5V
1
0.1
0.1
2.5V
20µs PULSE WIDTH
Tj = 25°C
1 10
VDS, Drain-to-Source Voltage (V)
100
100
VGS
TOP
10V
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
BOTTOM 2.5V
10
2.5V
1
0.1
20µs PULSE WIDTH
Tj = 150°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100.0
TJ = 150°C
10.0
TJ = 25°C
1.0
0.1
2.0
VDS = 15V
20µs PULSE WIDTH
3.0 4.0 5.0
VGS, Gate-to-Source Voltage (V)
6.0
Fig 3. Typical Transfer Characteristics
www.irf.com
2.0
ID = 13A
VGS = 10V
1.5
1.0
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
Free Datasheet http://www.datasheet4u.com/
3Pages IRF7821PbF
30
ID = 13A
25
20
15
TJ = 125°C
10
5 TJ = 25°C
0
2.0
4.0 6.0 8.0
VGS, Gate-to-Source Voltage (V)
10.0
Fig 12. On-Resistance Vs. Gate Voltage
15V
VDS
L
DRIVER
RG
2V0GVS
tp
D.U.T
IAS
0.01Ω
+
-
VDD
A
Fig 13a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
100
ID
TOP 4.5A
80 8.0A
BOTTOM 10A
60
40
20
0
25 50 75 100 125 150
Starting TJ, Junction Temperature (°C)
Fig 13c. Maximum Avalanche Energy
Vs. Drain Current
VDS
LD
VDD
VGS
Pulse Width < 1µs
Duty Factor < 0.1%
D.U.T
Fig 14a. Switching Time Test Circuit
VDS
90%
IAS
Fig 13b. Unclamped Inductive Waveforms
6
10%
VGS
td(on) tf
td(off) tr
Fig 14b. Switching Time Waveforms
www.irf.com
Free Datasheet http://www.datasheet4u.com/
6 Page | |||
ページ | 合計 : 10 ページ | ||
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PDF ダウンロード | [ IRF7821PBF データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
IRF7821PBF | Power MOSFET ( Transistor ) | International Rectifier |
IRF7821PBF-1 | Power MOSFET ( Transistor ) | International Rectifier |