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K40T1202 の電気的特性と機能

K40T1202のメーカーはInfineonです、この部品の機能は「IGBT ( Insulated Gate Bipolar Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 K40T1202
部品説明 IGBT ( Insulated Gate Bipolar Transistor )
メーカ Infineon
ロゴ Infineon ロゴ 




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K40T1202 Datasheet, K40T1202 PDF,ピン配置, 機能
IKW40N120T2
TrenchStop® 2nd Generation Series
Low Loss DuoPack : IGBT in 2nd generation TrenchStop®
with soft, fast recovery anti-parallel Emitter Controlled Diode
C
Best in class TO247
Short circuit withstand time – 10s
Designed for :
- Frequency Converters
G
E
- Uninterrupted Power Supply
TrenchStop® 2nd generation for 1200 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
Easy paralleling capability due to positive temperature coefficient in
PG-TO-247-3
VCE(sat)
Low EMI
Low Gate Charge
Very soft, fast recovery anti-parallel Emitter Controlled HEDiode
Qualified according to JEDEC1 for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type
VCE
IC VCE(sat),Tj=25°C Tj,max Marking Code
IKW40N120T2 1200V 40A
1.75V
175C K40T1202
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
DC collector current (Tj=150°C)
TC = 25C
TC = 110C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
VCE 1200V, Tj 175C
DC Diode forward current (Tj=150°C)
TC = 25C
TC = 110C
Diode pulsed current, tp limited by Tjmax
Gate-emitter voltage
Short circuit withstand time3)
VGE = 15V, VCC 600V, Tj,start 175C
Power dissipation
TC = 25C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
Wavesoldering only, temperature on leads only
VCE
IC
ICpuls
-
IF
IFpuls
VGE
tSC
Ptot
Tj
Tstg
-
Package
PG-TO-247-3
Value
1200
752
40
160
160
752
40
160
20
10
480
-40...+175
-55...+150
260
Unit
V
A
V
s
W
C
1 J-STD-020 and JESD-022
2 Limited by bond wire
3) Allowed number of short circuits: <1000; time between short circuits: >1s.
IFAG IPC TD VLS
1
Rev. 2.3 12.06.2013
Free Datasheet http://www.datasheet4u.com/

1 Page





K40T1202 pdf, ピン配列
IKW40N120T2
TrenchStop® 2nd Generation Series
Dynamic Characteristic
Input capacitance
Ciss
VCE=25V,
- 2360 - pF
Output capacitance
Coss
VGE=0V,
- 230 -
Reverse transfer capacitance
Crss
f=1MHz
- 125 -
Gate charge
QGate
VCC=960V, IC=40A
-
192
- nC
VGE=15V
Internal emitter inductance
LE
- 13 - nH
measured 5mm (0.197 in.) from case
Short circuit collector current1)
IC(SC)
VGE=15V,tSC10s
-
-A
VCC = 600V,
Tj,start = 25C
220
Tj.start = 175C
156
Switching Characteristic, Inductive Load, at Tj=25 C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during t b
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
trr
Qrr
Irrm
dirr/dt
Tj=25C,
VCC=600V,IC=40A,
VGE=0/15V,
RG=12,
L2)=80nH,
C2)=67pF
Energy losses include
“tail” and diode reverse
recovery.
Tj=25C,
VR=600V, IF=40A,
diF/dt=950A/s
min.
-
-
-
-
-
-
-
-
-
-
-
Value
typ.
33
28
314
94
3.2
2.05
5.25
258
3.3
23
350
Unit
max.
- ns
-
-
-
- mJ
-
-
- ns
µC
A
- A/s
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
2) Leakage inductance L a n d Stray capacity C due to dynamic test circuit in Figure E.
IFAG IPC TD VLS
3
Rev. 2.3 12.06.2013
Free Datasheet http://www.datasheet4u.com/


3Pages


K40T1202 電子部品, 半導体
IKW40N120T2
TrenchStop® 2nd Generation Series
150A
125A
100A
20V
VGE=17V
15V
13V
11V
75A
9V
7V
50A
25A
0A
0V 1V 2V 3V 4V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristic
(Tj = 25°C)
150A
125A
100A
20V
VGE=17V
15V
13V
11V
75A
9V
7V
50A
25A
0A
5V 0V 1V 2V 3V 4V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 6. Typical output characteristic
(Tj = 175°C)
5V
140A
120A
100A
80A
60A
40A
20A
0A
0V
TJ=175°C
25°C
2V 4V 6V
8V 10V 12V
Figure 7.
VGE, GATE-EMITTER VOLTAGE
Typical transfer characteristic
(VCE=20V)
3.5V
3.0V
IC=80A
2.5V
2.0V
1.5V
1.0V
0.5V
IC=40A
IC=20A
IC=8A
0.0V
-50°C
0°C
50°C 100°C 150°C
Figure 8.
TJ, JUNCTION TEMPERATURE
Typical collector-emitter saturation
voltage as a function of junction
temperature
(VGE = 15V)
IFAG IPC TD VLS
6
Rev. 2.3 12.06.2013
Free Datasheet http://www.datasheet4u.com/

6 Page



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共有リンク

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部品番号部品説明メーカ
K40T120

IGBT ( Insulated Gate Bipolar Transistor )

Infineon
Infineon
K40T1202

IGBT ( Insulated Gate Bipolar Transistor )

Infineon
Infineon


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