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UPA863TD の電気的特性と機能

UPA863TDのメーカーはCELです、この部品の機能は「NPN SILICON RF TRANSISTOR」です。


製品の詳細 ( Datasheet PDF )

部品番号 UPA863TD
部品説明 NPN SILICON RF TRANSISTOR
メーカ CEL
ロゴ CEL ロゴ 




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UPA863TD Datasheet, UPA863TD PDF,ピン配置, 機能
DATA SHEET
NPN SILICON RF TWIN TRANSISTOR
μPA863TD
NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS)
IN A 6-PIN LEAD-LESS MINIMOLD
FEATURES
Low voltage operation
2 different built-in transistors (2SC5436, 2SC5800)
Q1: Built-in high gain transistor
fT = 12.0 GHz TYP., S21e2 = 9.0 dB TYP. @ VCE = 1 V, IC = 10 mA, f = 2 GHz
Q2: Built-in low phase distortion transistor suited for OSC operation
fT = 4.5 GHz TYP., S21e2 = 4.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz
6-pin lead-less minimold package
BUILT-IN TRANSISTORS
3-pin thin-type ultra super minimold part No.
Q1
2SC5436
Q2
2SC5800
ORDERING INFORMATION
Part Number
μPA863TD-A
μPA863TD-T3-A
Quantity
50 pcs (Non reel)
10 kpcs/reel
Supplying Form
8 mm wide embossed taping
Pin 1 (Q1 Collector), Pin 6 (Q1 Base) face the perforation side of the tape
Remark To order evaluation samples, consult your nearby sales office.
Unit sample quantity is 50 pcs.
Because this product uses high-frequency technology, avoid excessive static electricity, etc.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Document No. P15686EJ1V0DS00 (1st edition)
Date Published July 2001 NS CP(K)
Free Datasheet http://www.datasheet4u.com/

1 Page





UPA863TD pdf, ピン配列
μPA863TD
ELECTRICAL CHARACTERISTICS (TA = +25°C)
(1) Q1
Parameter
Symbol
Test Conditions
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Gain Bandwidth Product
Insertion Power Gain
Noise Figure
Reverse Transfer Capacitance
ICBO VCB = 5 V, IE = 0 mA
IEBO VBE = 1 V, IC = 0 mA
h Note 1
FE
VCE = 1 V, IC = 10 mA
fT VCE = 1 V, IC = 10 mA, f = 2 GHz
S21e2
NF
VCE = 1 V, IC = 10 mA, f = 2 GHz
VCE = 1 V, IC = 3 mA, f = 2 GHz,
ZS = Zopt
C Note 2
re
VCB = 0.5 V, IE = 0 mA, f = 1 MHz
(2) Q2
Parameter
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Gain Bandwidth Product (1)
Gain Bandwidth Product (2)
Insertion Power Gain (1)
Insertion Power Gain (2)
Noise Figure
Reverse Transfer Capacitance
Symbol
Test Conditions
ICBO VCB = 5 V, IE = 0 mA
IEBO VBE = 1 V, IC = 0 mA
h Note 1
FE
VCE = 1 V, IC = 5 mA
fT VCE = 1 V, IC = 5 mA, f = 2 GHz
fT VCE = 1 V, IC = 15 mA, f = 2 GHz
S21e2 VCE = 1 V, IC = 5 mA, f = 2 GHz
S21e2 VCE = 1 V, IC = 15 mA, f = 2 GHz
NF VCE = 1 V, IC = 10 mA, f = 2 GHz,
ZS = Zopt
C Note 2
re
VCB = 0.5 V, IE = 0 mA, f = 1 MHz
Notes 1. Pulse measurement: PW 350 μs, Duty Cycle 2%
2. Collector to base capacitance when the emitter grounded
hFE CLASSIFICATION
Rank
Marking
hFE Value of Q1
hFE Value of Q2
FB
xC
70 to 140
100 to 145
MIN.
70
10.0
7.0
TYP.
110
12.0
9.0
1.3
MAX.
100
100
140
2.0
0.4 0.7
Unit
nA
nA
GHz
dB
dB
pF
MIN.
100
3.0
5.0
3.0
4.5
TYP.
120
4.5
6.5
4.0
5.5
1.9
MAX.
600
600
145
2.5
0.6 0.8
Unit
nA
nA
GHz
GHz
dB
dB
dB
pF
Data Sheet P15686EJ1V0DS
3
Free Datasheet http://www.datasheet4u.com/


3Pages


UPA863TD 電子部品, 半導体
Q1
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
35
30 400 μA
25
IB : 50 μA step
300 μA
20 200 μA
15
10 100 μA
5
IB = 50 μA
0 1234
Collector to Emitter Voltage VCE (V)
μPA863TD
Q2
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
60
50 400 μA 350 μA
300 μA
40
250 μA
30 200 μA
20 150 μA
100 μA
10
IB = 50 μA
0 1234567
Collector to Emitter Voltage VCE (V)
6 Data Sheet P15686EJ1V0DS
Free Datasheet http://www.datasheet4u.com/

6 Page



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共有リンク

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部品番号部品説明メーカ
UPA863TD

NPN SILICON RF TRANSISTOR

CEL
CEL
UPA863TS

NPN SILICON RF TRANSISTOR

NEC
NEC


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