PDF IXTP64N055T Data sheet ( Hoja de datos )

Número de pieza	IXTP64N055T
Descripción	Power MOSFET ( Transistor )
Fabricantes	IXYS
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No Preview Available ! Preliminary Technical Information TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTP64N055T IXTY64N055T VDSS = ID25 = RDS(on) ≤ 55 V 64 A 13 mΩ TO-220 (IXTP) Symbol Test Conditions Maximum Ratings GD S D (TAB) VDSS VDGR VGSM ID25 IL IDM IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Transient TC = 25°C Package Current Limit, RMS TO-252 TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS TJ ≤ 175°C, RG = 18 Ω TC = 25°C 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 seconds Mounting torque (TO-220) 55 55 ± 20 64 25 170 10 250 3 V V V A A A A mJ V/ns 130 W -55 ... +175 175 -55 ... +175 °C °C °C 300 °C 260 °C 1.13 / 10 Nm/lb.in. TO-220 TO-252 3g 0.35 g Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVDSS VGS = 0 V, ID = 250 μA VGS(th) VDS = VGS, ID = 25 μA IGSS VGS = ± 20 V, VDS = 0 V IDSS VDS = VDSS VGS = 0 V TJ = 150°C RDS(on) VGS = 10 V, ID = 0.5 ID25, Notes 1, 2 Characteristic Values Min. Typ. Max. 55 V 2.0 4.0 V ± 100 nA 1 μA 100 μA 13 mΩ TO-252 (IXTY) G S D (TAB) G = Gate S = Source D = Drain TAB = Drain Features Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 °C Operating Temperature Advantages Easy to mount Space savings High power density Applications Automotive - Motor Drives - High Side Switch - 12V Battery - ABS Systems DC/DC Converters and Off-line UPS Primary- Side Switch High Current Switching Applications © 2006 IXYS CORPORATION All rights reserved DS99498 (11/06) Free Datasheet http://www.datasheet4u.com/ 1 page Fig. 13. Resistiv e Turn-on Rise Time v s. Junction Temperature 65 60 RG = 18Ω VGS = 10V 55 VDS = 27.5V 50 45 40 I D = 30A 35 I D = 10A 30 25 20 25 35 45 55 65 75 85 95 105 115 125 TJ - Degrees Centigrade Fig. 15. Resistiv e Turn-on Switching Times v s. Gate Resistance 90 t r td(on) - - - - 80 TJ = 125ºC, VGS = 10V VDS = 27.5V 70 ID = 30A 60 I D = 10A 50 30 28 26 24 22 40 20 30 18 20 16 15 20 25 30 35 40 45 50 55 60 RG - Ohms Fig. 17. Resistiv e Turn-off Switching Times v s. Drain Current 40 58 t f td(off) - - - - 38 RG = 18Ω, VGS = 10V 54 VDS = 27.5V 36 50 34 46 TJ = 125ºC 32 42 30 38 28 34 TJ = 25ºC 26 30 10 12 14 16 18 20 22 24 26 28 30 ID - Amperes © 2006 IXYS CORPORATION All rights reserved IXTP64N055T IXTY64N055T Fig. 14. Resistiv e Turn-on Rise Time v s. Drain Current 65 60 TJ = 25ºC 55 50 RG = 18Ω 45 VGS = 10V VDS = 27.5V 40 35 30 25 TJ = 125ºC 20 10 12 14 16 18 20 22 24 26 28 30 ID - Amperes Fig. 16. Resistiv e Turn-off Switching Times v s. Junction Temperature 42 54 40 50 38 46 36 I D = 10A 34 42 38 32 34 30 28 26 25 ID = 30A tf td(off) - - - - 30 RG = 18Ω, VGS = 10V VDS = 27.5V 26 22 35 45 55 65 75 85 95 105 115 125 TJ - Degrees Centigrade Fig. 18. Resistiv e Turn-off Switching Times v s. Gate Resistance 120 130 110 t f td(off) - - - - TJ = 125ºC, VGS = 10V 100 VDS = 27.5V 120 110 90 100 80 ID = 10A 70 90 80 60 70 I D = 30A 50 60 40 50 30 40 20 30 15 20 25 30 35 40 45 50 55 60 RG - Ohms IXYS REF: T_64N055T (1V) 7-14-06.xls Free Datasheet http://www.datasheet4u.com/ 5 Page

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