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PDF IXTA4N80P Data sheet ( Hoja de datos )
| Número de pieza | IXTA4N80P | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | IXYS | |
| Logotipo |  |
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Advance Technical Information
PolarHVTM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTA4N80P
IXTP4N80P
IRVDD2D5SSS(on)
=
=
≤
800
3.6
3.4
V
A
Ω
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IAR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 18 Ω
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque (TO-220)
TO-220
TO-263
Maximum Ratings
800 V
800 V
TO-263 (IXTA)
± 30
± 40
3.6
8
2
20
250
V
V
G
S
A
A TO-220 (IXTP)
A
mJ
mJ
10 V/ns
G DS
(TAB)
(TAB)
100
-55 ... +150
150
-55 ... +150
W
°C
°C
°C
300 °C
260 °C
1.13/10 Nm/lb.in.
4g
3g
G = Gate
S = Source
Features
D = Drain
TAB = Drain
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
BVDSS
VGS = 0 V, ID = 250 μA
Characteristic Values
Min. Typ. Max.
800 V
VGS(th)
VDS = VGS, ID = 100μA
3.0 5.5 V
IGSS VGS = ±30 V, VDS = 0 V
±100 nA
IDSS
VDS = VDSS
VGS = 0 V
TJ = 125°C
5 μA
150 μA
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
3.4 Ω
z International standard packages
z Unclamped Inductive Switching (UIS)
rated
z Low package inductance
- easy to drive and to protect
Advantages
z Easy to mount
z Space savings
z High power density
© 2006 IXYS CORPORATION All rights reserved
DS99596E(08/06)
Free Datasheet http://www.datasheet4u.com/
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet IXTA4N80P.PDF ] | |
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