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IXTN62N50L の電気的特性と機能

IXTN62N50LのメーカーはIXYSです、この部品の機能は「Power MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IXTN62N50L
部品説明 Power MOSFET ( Transistor )
メーカ IXYS
ロゴ IXYS ロゴ 




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IXTN62N50L Datasheet, IXTN62N50L PDF,ピン配置, 機能
LinearTM Power MOSFET
w/Extended FBSOA
IXTN62N50L
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
PD
TJ
TJM
Tstg
VISOL
Md
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, Pulse Width Limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
50/60 Hz, RMS, t = 1minute
IISOL 1mA,
t = 1s
Mounting Torque for Base Plate
Terminal Connection Torque
Maximum Ratings
500 V
500 V
± 30 V
± 40 V
62 A
150 A
80 A
5J
800 W
-55 ... +150
°C
150 °C
-55 ... +150
°C
2500
3000
1.5/13
1.3/11.5
30
V~
V~
Nm/lb.in.
Nm/lb.in.
g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 1mA
VGS(th)
VDS = VGS, ID = 250μA
IGSS VGS = ± 30V, VDS = 0V
IDSS VDS = VDSS, VGS = 0V
TJ = 125°C
RDS(on)
VGS = 20V, ID = 0.5 • ID25, Note 1
Characteristic Values
Min. Typ. Max.
500 V
3.0 5.5 V
± 200 nA
50 μA
1 mA
100 mΩ
VDSS =
ID25 =
RDS(on)
500V
62A
100mΩ
miniBLOC
E153432
S
G
S
D
G = Gate
S = Source
D = Drain
Either Source Terminal S can be used as
the Source Terminal or the Kelvin Source
(Gate Return) Terminal.
Features
z International Standard Package
z Low Intrinsic Gate Resistance
z miniBLOC with Aluminum Nitride
Isolation
z Fast Intrinsic Diode
z Extended FBSOA
z Avalanche Rated
z Low RDS(ON) and QG
z Low Package Inductance
Advantages
z High Power Density
z Easy to Mount
z Space Savings
Applications
z Programmable Loads
z DC-DC Converters
z Current Regulators
z Battery Chargers
z DC Choppers
z Temperature and Lighting
Controls
© 2011 IXYS CORPORATION, All Rights Reserved
DS99812A(11/11)
Free Datasheet http://www.datasheet4u.com/

1 Page





IXTN62N50L pdf, ピン配列
IXTN62N50L
Fig. 1. Output Characteristics @ TJ = 25ºC
60 VGS = 20V
16V
14V
50
12V
40
30
10V
20
9V
10
8V
0 7V
012345
VDS - Volts
6
Fig. 3. Output Characteristics @ TJ = 125ºC
60 VGS = 20V
14V
50 12V
40
10V
30
9V
20
10 8V
7V
0 6V
0 2 4 6 8 10 12
VDS - Volts
Fig. 5. RDS(on) Normalized to ID = 31A Value vs.
Drain Current
3.0
VGS = 20V
2.6
TJ = 125ºC
14
2.2
1.8
TJ = 25ºC
1.4
1.0
0.6
0
20 40 60 80 100 120 140
ID - Amperes
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
140 VGS = 20V
16V
120
14V
100
80
60 12V
40 10V
20 9V
8V
0 7V
0 2 4 6 8 10 12 14 16 18 20
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 31A Value vs.
Junction Temperature
3.2
VGS = 10V
2.8
2.4
I D = 62A
2.0
I D = 31A
1.6
1.2
0.8
0.4
-50
-25
0 25 50 75 100 125 150
TJ - Degrees Centigrade
Fig. 6. Maximum Drain Current vs.
Case Temperature
70
60
50
40
30
20
10
0
-50
-25
0 25 50 75 100 125 150
TC - Degrees Centigrade
© 2011 IXYS CORPORATION, All Rights Reserved
Free Datasheet http://www.datasheet4u.com/


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部品番号部品説明メーカ
IXTN62N50L

Power MOSFET ( Transistor )

IXYS
IXYS


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