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PDF IXTN600N04T2 Data sheet ( Hoja de datos )
| Número de pieza | IXTN600N04T2 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | IXYS | |
| Logotipo |  |
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TrenchT2TM GigaMOSTM
Power MOSFET
IXTN600N04T2
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
VDSS
VDGR
VGSM
ID25
IL(RMS)
IDM
IA
EAS
PD
TJ
TJM
Tstg
TL
TSOLD
VISOL
Md
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGS = 1MΩ
Transient
TC = 25°C (Chip Capability)
External Lead Current Limit
TC = 25°C, Pulse Width Limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
50/60 Hz, RMS
t = 1 minute
IISOL ≤ 1mA
t = 1 second
Mounting Torque
Terminal Connection Torque
Maximum Ratings
40
40
V
V
±20 V
600 A
200
1800
A
A
200 A
3J
940 W
-55 ... +175
175
-55 ... +175
°C
°C
°C
300 °C
260 °C
2500
3000
V~
V~
1.5/13
1.3/11.5
Nm/lb.in.
Nm/lb.in.
30 g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 250μA
VGS(th)
VDS = VGS, ID = 250μA
IGSS VGS = ±20V, VDS = 0V
IDSS VDS = VDSS, VGS = 0V
TJ = 150°C
RDS(on)
VGS = 10V, ID = 100A, Note 1
Characteristic Values
Min.
Typ. Max.
40 V
1.5 3.5 V
±200 nA
10 μA
1 mA
1.3 mΩ
VDSS =
ID25 =
RDS(on) ≤
40V
600A
1.3mΩ
miniBLOC, SOT-227
E153432
S
G
S
D
G = Gate
S = Source
D = Drain
Either Source Terminal S can be used as
the Source Terminal or the Kelvin Source
( Gate Return ) Terminal.
Features
z International Standard Package
z miniBLOC, with Aluminium Nitride
Isolation
z 175°C Operating Temperature
z Isolation Voltage 2500 V~
z High Current Handling Capability
z Fast Intrinsic Diode
z Avalanche Rated
z Low RDS(on)
Advantages
z Easy to Mount
z Space Savings
z High Power Density
Applications
z DC-DC Converters and Off-Line UPS
z Primary-Side Switch
z High Speed Power Switching
Applications
© 2012 IXYS CORPORATION, All Rights Reserved
DS100172B(10/12)
Free Datasheet http://www.datasheet4u.com/
1 page  
IXTN600N04T2
Fig. 13. Resistive Turn-on Rise Time
vs. Junction Temperature
90
80 RG = 1Ω , VGS = 10V
VDS = 20V
70
60
50 I D = 200A
40
30 I D = 100A
20
10
0
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 15. Resistive Turn-on Switching Times
vs. Gate Resistance
600
t r td(on) - - - -
500 TJ = 125ºC, VGS = 10V
VDS = 20V
400
I D = 200A
300
200 I D = 100A
140
120
100
80
60
100 40
0 20
1 2 3 4 5 6 7 8 9 10
RG - Ohms
400
350
300
250
200
150
100
50
0
40
Fig. 17. Resistive Turn-off Switching Times
vs. Drain Current
t f td(off) - - - -
RG = 1Ω, VGS = 10V
VDS = 20V
200
180
160
140
TJ = 125ºC, 25ºC
120
100
80
60
40
60 80 100 120 140 160 180 200
ID - Amperes
100
90
80
70
60
50
40
30
20
10
0
40
Fig. 14. Resistive Turn-on Rise Time
vs. Drain Current
RG = 1Ω , VGS = 10V
VDS = 20V
TJ = 125ºC
TJ = 25ºC
60 80 100 120 140 160 180
ID - Amperes
200
Fig. 16. Resistive Turn-off Switching Times
vs. Junction Temperature
400
350 t f
td(off) - - - -
RG = 1Ω, VGS = 10V
300 VDS = 20V
160
150
140
250 130
200
150 I D = 100A
I D = 200A
120
110
100 100
50 90
0 80
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 18. Resistive Turn-off Switching Times
vs. Gate Resistance
800
700 t f
td(off) - - - -
TJ = 125ºC, VGS = 10V
600 VDS = 20V
I D = 200A, 100A
800
700
600
500 500
400 400
300 300
200 200
100 100
00
1 2 3 4 5 6 7 8 9 10
RG - Ohms
© 2012 IXYS CORPORATION, All Rights Reserved
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet IXTN600N04T2.PDF ] | |
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