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IXKH47N60C PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IXKH47N60C
部品説明 Power MOSFET
メーカ IXYS
ロゴ IXYS ロゴ 



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IXKH47N60C Datasheet, IXKH47N60C PDF,ピン配置, 機能
IXKH 47N60C
CoolMOS™ 1) Power MOSFET
Low RDSon, high VDSS
Superjunction MOSFET
D
G
S
VDSS
= 600 V
ID25 = 47 A
R =DS(on) max 70 mΩ
TO-247
G
D
S
E72873
q
tab
MOSFET
Symbol
VDSS
VGS
ID25
ID100
EAS
EAR
dV/dt
Conditions
TVJ = 25°C
TC = 25°C
TC = 100°C
single pulse ID = 10 A; TC = 25°C
repetitive ID = 20 A; TC = 25°C
MOSFET dV/dt ruggedness VDS = 0...480 V
Maximum Ratings
600 V
± 20 V
47
30
1800
tbd
tbd
A
A
mJ
mJ
V/ns
Symbol Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
RDSon
VGS = 10 V; ID = ID100 c
60 70 mΩ
VGS(th)
IDSS
IGSS
VDS = VGS; ID = 2 mA
VDS = VDSS; VGS = 0 V
VGS = ± 20 V; VDS = 0 V
TVJ = 25°C
TVJ = 150°C
2
4
25
250
±100
V
µA
µA
nA
Ciss
Coss
VGS = 0 V; VDS = 100 V
f = 1 MHz
Qg
Qgs VGS = 0 to 10 V; VDS = 350 V; ID = 40 A
Qgd
td(on)
tr
td(off)
tf
VGS = 10 V; VDS = 380 V
ID = 47 A; RG = 4.7 Ω
RthJC
c Pulse test, t < 300 µs, duty cycle d < 2%
tbd pF
tbd pF
255 650 nC
30 nC
110 nC
20 ns
27 ns
111 ns
10 ns
0.3 K/W
Features
• 3rd generation Superjunction power
MOSFET
- high blocking capability
- lowest resistance
- avalanche rated for unclamped
inductive switching (UIS)
- low thermal resistance
due to reduced chip thickness
Applications
• Switched mode power supplies (SMPS)
• Uninterruptible power supplies (UPS)
• Power factor correction (PFC)
• Welding
• Inductive heating
1) CoolMOSis a trademark of
Infineon Technologies AG.
IXYS reserves the right to change limits, test conditions and dimensions.
© 2008 IXYS All rights reserved
20080523a
1-4
Free Datasheet http://www.datasheet4u.com/

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