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IXKP20N60C5 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IXKP20N60C5
部品説明 Power MOSFET
メーカ IXYS
ロゴ IXYS ロゴ 



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IXKP20N60C5 Datasheet, IXKP20N60C5 PDF,ピン配置, 機能
IXKH 20N60C5
IXKP 20N60C5
CoolMOS™ 1) Power MOSFET
N-Channel Enhancement Mode
Low RDSon, High VDSS MOSFET
Ultra low gate charge
ID25 = 20 A
VDSS
= 600 V
R =DS(on) max 0.2 Ω
D TO-247 AD (IXKH)
G
S
G
D
S
TO-220 AB (IXKP)
q D(TAB)
MOSFET
Symbol
VDSS
VGS
ID25
ID90
EAS
EAR
dV/dt
Conditions
TVJ = 25°C
TC = 25°C
TC = 90°C
single pulse
repetitive
ID = 6.6 A; TC = 25°C
MOSFET dV/dt ruggedness VDS = 0...480 V
Maximum Ratings
600 V
± 20 V
20 A
13 A
435 mJ
0.66 mJ
50 V/ns
Symbol
RDSon
VGS(th)
IDSS
IGSS
Ciss
Coss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
RthJC
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
VGS = 10 V; ID = 10 A
VDS = VGS; ID = 1.1 mA
VDS = 600 V; VGS = 0 V
VGS = ± 20 V; VDS = 0 V
VGS = 0 V; VDS = 100 V
f = 1 MHz
TVJ = 25°C
TVJ = 125°C
VGS = 0 to 10 V; VDS = 400 V; ID = 10 A
VGS = 10 V; VDS = 400 V
ID = 10 A; RG = 3.3 Ω
180
2.5 3
10
1520
72
32
8
11
10
5
50
5
200 mΩ
3.5 V
1 µA
µA
100 nA
pF
pF
45 nC
nC
nC
ns
ns
ns
ns
0.60 K/W
G
D
S
Features
• fast CoolMOS™ 1) power MOSFET
- 4th generation
- High blocking capability
- Lowest resistance
- Avalanche rated for unclamped
inductive switching (UIS)
- Low thermal resistance
due to reduced chip thickness
• Enhanced total power density
Applications
• Switched mode power supplies
(SMPS)
• Uninterruptible power supplies (UPS)
• Power factor correction (PFC)
• Welding
• Inductive heating
• PDP and LCD adapter
1) CoolMOSis a trademark of
Infineon Technologies AG.
IXYS reserves the right to change limits, test conditions and dimensions.
© 2008 IXYS All rights reserved
20080523d
1-4
Free Datasheet http://www.datasheet4u.com/

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