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Número de pieza | IXGR72N60C3D1 | |
Descripción | IGBT | |
Fabricantes | IXYS | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de IXGR72N60C3D1 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! GenX3TM 600V IGBT
with Diode
High-Speed Low-Vsat PT IGBT
40-100 kHz Switching
IXGR72N60C3D1
VCES
IC110
VCE(sat)
tfi(typ)
= 600V
= 35A
≤£ 2.7V
= 55ns
Symbol
VCES
VCGR
VGES
VGEM
IC25
IC110
IF110
ICM
IA
EAS
SSOA
(RBSOA)
PC
TJ
TJM
Tstg
VISOL
FC
TL
TSOLD
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1MΩ
Continuous
Transient
TC = 25°C (Limited by Leads)
TC = 110°C
TC = 110°C
TC = 25°C, 1ms
TC = 25°C
TC = 25°C
VGE = 15V, TVJ = 125°C, RG = 2Ω
Clamped Inductive Load
TC = 25°C
50/60 Hz, RMS, t = 1Minute
IISOL < 1mA
t = 20 Seconds
Mounting Force
Maximum Ratings
600
600
V
V
±20 V
±30 V
75 A
35 A
36 A
400 A
50 A
500 mJ
ICM = 150
VCE ≤ VCES
200
A
W
-55 ... +150
150
-55 ... +150
2500
3000
20..120/4.5..27
°C
°C
°C
V~
V~
N/lb
Maximum Lead Temperature for Soldering
300 °C
1.6mm (0.062 in.) from Case for 10s
260 °C
5g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
VGE(th)
IC = 250μA, VCE = VGE
ICES VCE = VCES, VGE = 0V
TJ = 125°C
IGES VCE = 0V, VGE = ±20V
VCE(sat)
IC = 50A, VGE = 15V, Note 1
TJ = 125°C
Characteristic Values
Min.
Typ. Max.
3.0 5.5 V
300 μA
5 mA
±100 nA
2.10
1.65
2.70 V
V
ISOPLUS 247TM
G
CE
Isolated Tab
G = Gate
E = Emitter
C = Collector
Features
z Silicon Chip on Direct-Copper Bond
(DCB) Substrate
z Optimized for Low Switching Losses
z Square RBSOA
z Isolated Mounting Surface
z Anti-Parallel Ultra Fast Diode
z Avalanche Rated
z 2500V Electrical Isolation
Advantages
z High Power Density
z Low Gate Drive Requirement
Applications
z High Frequency Power Inverters
z UPS
z Motor Drives
z SMPS
z PFC Circuits
z Battery Chargers
z Welding Machines
z Lamp Ballasts
© 2009 IXYS CORPORATION, All Rights Reserved
DS100010A(11/09)
Free Datasheet http://www.datasheet4u.com/
1 page 5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
2
Fig. 12. Inductive Switching
Energy Loss vs. Gate Resistance
6.0
Eoff Eon - - - -
TJ = 125ºC , VGE = 15V
VCE = 480V
5.5
5.0
4.5
I C = 100A
4.0
3.5
3.0
I C = 50A
2.5
2.0
1.5
1.0
3 4 5 6 7 8 9 10 11 12 13 14 15
RG - Ohms
Fig. 14. Inductive Switching
Energy Loss vs. Junction Temperature
3.5
5.6
3.0 Eoff
Eon - - - -
RG = 2Ω , VGE = 15V
2.5 VCE = 480V
4.8
4.0
2.0
I C = 100A
3.2
1.5 2.4
1.0 1.6
0.5
I C = 50A
0.8
0.0 0.0
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
180
160
140
120
100
80
60
40
20
20
Fig. 16. Inductive Turn-off
Switching Times vs. Collector Current
t f td(off) - - - -
RG = 2Ω , VGE = 15V
VCE = 480V
TJ = 125ºC
TJ = 25ºC
30 40 50 60 70 80 90
IC - Amperes
150
140
130
120
110
100
90
80
70
100
© 2009 IXYS CORPORATION, All Rights Reserved
IXGR72N60C3D1
Fig. 13. Inductive Switching
Energy Loss vs. Collector Current
2.8
2.4 Eoff
Eon - - - -
RG = 2Ω , VGE = 15V
2.0 VCE = 480V
5.6
4.8
4.0
1.6 3.2
1.2
TJ = 125ºC, 25ºC
0.8
2.4
1.6
0.4 0.8
0.0 0.0
20 30 40 50 60 70 80 90 100
IC - Amperes
190
180
170
160
150
140
130
120
110
100
90
2
Fig. 15. Inductive Turn-off
Switching Times vs. Gate Resistance
500
t f td(off) - - - -
TJ = 125ºC, VGE = 15V
VCE = 480V
450
400
350
I C = 100A
300
250
I C = 50A
200
150
100
50
0
3 4 5 6 7 8 9 10 11 12 13 14 15
RG - Ohms
Fig. 17. Inductive Turn-off
Switching Times vs. Junction Temperature
160
t f td(off) - - - -
140 RG = 2Ω , VGE = 15V
VCE = 480V
120
125
115
105
100
I C = 100A
80
I C = 50A
95
85
60 75
40 65
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Free Datasheet http://www.datasheet4u.com/
5 Page |
Páginas | Total 7 Páginas | |
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