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09N20 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 09N20
部品説明 GI09N20
メーカ GTM
ロゴ GTM ロゴ 



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09N20 Datasheet, 09N20 PDF,ピン配置, 機能
Pb Free Plating Product
ISSUED DATE :2005/06/27
REVISED DATE :
GI09N20
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
200V
380m
8.6A
Description
The GI09N20 provide the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The through-hole version (TO-251) is available for low-profile applications.
Features
*Simple Drive Requirement
*Lower On-resistance
*Fast Switching Characteristic
Package Dimensions
TO-251
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
6.40 6.80
5.20 5.50
6.80 7.20
7.20 7.80
2.30 REF.
0.60 0.90
REF.
G
H
J
K
L
M
Millimeter
Min. Max.
0.50 0.70
2.20 2.40
0.45 0.55
0.45 0.60
0.90 1.50
5.40 5.80
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
Continuous Drain Current, VGS@10V
Continuous Drain Current, VGS@10V
Pulsed Drain Current1
Total Power Dissipation
ID @TC=25
ID @TC=100
IDM
PD @TC=25
Linear Derating Factor
Single Pulse Avalanche Energy2
Avalanche Current
Operating Junction and Storage Temperature Range
EAS
IAR
Tj, Tstg
Ratings
200
±30
8.6
5.5
36
69
0.55
40
8.6
-55 ~ +150
Unit
V
V
A
A
A
W
W/
mJ
A
Thermal Data
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Symbol
Rthj-c
Rthj-a
Value
1.8
110
Unit
/W
/W
GI09N20
Page: 1/4
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