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PDF 2SA1961 Data sheet ( Hoja de datos )

Número de pieza 2SA1961
Descripción Silicon PNP Epitaxial Transistor
Fabricantes Panasonic Semiconductor　
Logotipo Panasonic Semiconductor Logotipo



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No Preview Available ! 2SA1961 Hoja de datos, Descripción, Manual

Transistor
2SA1961
Silicon PNP epitaxial planer type
For general amplification
Complementary to 2SC5419
s Features
q High collector to emitter voltage VCEO.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
–200
V
Collector to emitter voltage VCEO
–200
V
Emitter to base voltage
VEBO
–5
V
Peak collector current
ICP
– 0.1
A
Collector current IC –70 mA
Collector power dissipation PC* 1 W
Junction temperature
Tj
150 ˚C
Storage temperature
Tstg –55 ~ +150 ˚C
* Printed circuit board: Copper foil area of 1cm2 or more, and the board
thickness of 1.7mm for the collector portion
6.9±0.1
0.7 4.0
Unit: mm
1.05 2.5±0.1
±0.05
(1.45)
0.8
0.65 max.
+0.1
0.45–0.05
2.5±0.5 2.5±0.5
123
Note: In addition to the
lead type shown in
the upper figure, the
type as shown in
the lower figure is
also available.
1:Emitter
2:Collector
3:Base
MT2 Type Package
1.2±0.1
0.45+–00..105
0.65
max.
(HW type)
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
VCEO
VEBO
hFE*1
IC = –100µA, IB = 0
IE = –1µA, IC = 0
VCE = –10V, IC = –5mA
–200
–5
30
V
V
150 –
Collector to emitter saturation voltage VCE(sat)
IC = –50mA, IB = –5mA
–2.5 V
Transition frequency fT VCB = –5V, IE = 10mA, f = 200MHz 30 MHz
Collector output capacitance
Cob
VCB = –10V, IE = 0, f = 1MHz
7 pF
*1hFE Rank classification
Rank
P
hFE 30 ~ 100
Q
60 ~ 150
1

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