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UPA2826T1S の電気的特性と機能

UPA2826T1SのメーカーはRenesasです、この部品の機能は「N-channel MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 UPA2826T1S
部品説明 N-channel MOSFET
メーカ Renesas
ロゴ Renesas ロゴ 




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UPA2826T1S Datasheet, UPA2826T1S PDF,ピン配置, 機能
Data Sheet
μPA2826T1S
N-channel MOSFET
20 V , 27 A , 4.3 mΩ
R07DS0989EJ0100
Rev.1.00
Dec 25, 2012
Description
The μ PA2826T1S is N-channel MOS Field Effect Transistor designed for power management applications of portable
equipment .
Features
VDSS = 20 V (TA = 25°C)
Low on-state resistance
RDS(on) = 4.3 mΩ MAX. (VGS = 8.0 V, ID = 13.5 A)
2.5 V Gate-drive available
Small & thin type surface mount package with heat spreader
Pb-free and Halogen free
HWSON-8
Ordering Information
Part No.
LEAD PLATING
PACKING
Package
μ PA2826T1S-E2-AT1
Pure Sn(Tin)
HWSON-8
Tape 5000 p/reel
0.022 g TYP.
Note: 1. Pb-free (This product does not contain Pb in external electrode and other parts.)
Absolute Maximum Ratings (TA = 25°C)
Item
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) 1
Total Power Dissipation 2
Total Power Dissipation (PW = 10 sec) 2
Total Power Dissipation (TC = 25°C)
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
PT2
PT3
Tch
Tstg
Ratings
20
±12
±27
±81
1.5
3.8
20
150
55 to +150
Unit
V
V
A
A
W
W
W
°C
°C
Thermal Resistance
Channel to Ambient Thermal Resistance ∗2
Channel to Case(Drain) Thermal Resistance
Rth(ch-A)
Rth(ch-C)
83.3
6.25
°C/W
°C/W
Notes: 1. PW 10 μs, Duty Cycle 1%
2. Mounted on a glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt
R07DS0989EJ0100 Rev.1.00
Dec 25, 2012
Page 1 of 6
Free Datasheet http://www.datasheet4u.com/

1 Page





UPA2826T1S pdf, ピン配列
μPA2826T1S
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS SAFE
OPERATING AREA
140
120
100
80
60
40
20
0
0 25 50 75 100 125 150 175
TC - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
1000
100
ID(pulse)=81A
ID(DC)=27A
PW=100us
10
1
0.1
0.01
0.01
RDS(on) Limited
VGS=8V
Power Dissipation Limited
Tc=25°C
Single Pulse
0.1
1
10
200us
500us
1ms
10ms
DC
100
VDS - Drain to Source Voltage – V
1000
100
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
Single Pulse
Rth(ch-A) = 83.3°C/W
10 Rth(ch-C) = 6.25°C/W
1
0.1
0.01
100 μ
Rth(ch-A) : Mounted on a glass expoxy board (25.4mm x 25.4mm 0.8 mmt)
1m
10 m
100 m
1
10
PW - Pulse Width - s
100
1000
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE
80
VGS=8V
60 4.5V
2.5V
40
20
Pulsed
0
0 0.2 0.4 0.6 0.8
VDS - Drain to Source Voltage - V
FORWARD TRANSFER CHARACTERISTICS
100
TA=150°C
10 75°C
25°C
-55°C
1
0.1
0.01
VDS = 10V
Pulsed
0.001
0 0.5 1 1.5 2
VGS - Gate to Source Voltage - V
R07DS0989EJ0100 Rev.1.00
Dec 25, 2012
Page 3 of 6
Free Datasheet http://www.datasheet4u.com/


3Pages


UPA2826T1S 電子部品, 半導体
μPA2826T1S
Package Drawings (Unit: mm)
HWSON-8
5678
432 1
1,2,3 : Source
4 : Gate
5,6,7,8 : Drain
RENESAS Package Code : PWSN0008JB-A
Equivalent Circuit
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and
ultimately degrade the device operation. Steps must be taken to stop generation of static
electricity as much as possible, and quickly dissipate it once, when it has occurred.
R07DS0989EJ0100 Rev.1.00
Dec 25, 2012
Page 6 of 6
Free Datasheet http://www.datasheet4u.com/

6 Page



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部品番号部品説明メーカ
UPA2826T1S

N-channel MOSFET

Renesas
Renesas


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