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UPA2813T1L の電気的特性と機能

UPA2813T1LのメーカーはRenesasです、この部品の機能は「P-channel MOSFEF」です。


製品の詳細 ( Datasheet PDF )

部品番号 UPA2813T1L
部品説明 P-channel MOSFEF
メーカ Renesas
ロゴ Renesas ロゴ 




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UPA2813T1L Datasheet, UPA2813T1L PDF,ピン配置, 機能
μPA2813T1L
P-channel MOSFET
–30 V, –27 A, 6.2 mΩ
Data Sheet
R07DS0763EJ0102
Rev.1.02
May. 28, 2013
Description
The μPA2813T1L is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management
applications of portable equipment.
Features
VDSS = 30 V (TA = 25°C)
Low on-state resistance
RDS(on) = 6.2 mΩ MAX. (VGS = 10 V, ID = 27 A)
4.5 V Gate-drive available
Small & thin type surface mount package with heat spreader
Pb-free and Halogen free
8-pin HVSON(3333)
Ordering Information
Part No.
Lead Plating
Packing
Package
μPA2813T1L-E2-AT 1
Pure Sn
Tape 3000 p/reel
8-pin HVSON (3333)
typ. 0.028 g
Note: 1. Pb-free (This product does not contain Pb in external electrode and other parts.)
Absolute Maximum Ratings (TA = 25°C)
Item
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) 1
Total Power Dissipation 2
Total Power Dissipation (PW = 10 sec) 2
Total Power Dissipation (TC = 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current 3
Single Avalanche Energy 3
Symbol
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
PT2
PT3
Tch
Tstg
IAS
EAS
Ratings
30
m20
m27
m108
1.5
3.8
52
150
55 to +150
23
54
Unit
V
V
A
A
W
W
W
°C
°C
A
mJ
Thermal Resistance
Channel to Ambient Thermal Resistance 2
Channel to Case (Drain) Thermal Resistance
Rth(ch-A)
Rth(ch-C)
83.3
2.4
°C/W
°C/W
Notes: 1. PW 10 μs, Duty Cycle 1%
2. Mounted on a glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt
3. Starting Tch = 25°C, VDD = 15 V, RG = 25 Ω, VGS = 20 0 V, L = 100 μH
R07DS0763EJ0102 Rev.1.02
May. 28, 2013
Page 1 of 6
Free Datasheet http://www.datasheet4u.com/

1 Page





UPA2813T1L pdf, ピン配列
μPA2813T1L
Chapter Title
Typical Characteristics (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
140
120
100
80
60
40
20
0
0 25 50 75 100 125 150 175
TA - Ambient Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
-1000
-100
ID(pulse) = –108 A
ID(DC) = –27A
100 ms
10 ms
PW = 200 μs
1 ms
-10
-1
R DS(on)=Limi1te0d V)
(VGS
Power Dissipation Limited
-0.1
Single Pulse
TA = 25ºC
Mounted on a glass epoxy board of
25.4 mm x 25.4 mm x 0.8 mmt
-0.01
-0.01
-0.1
-1
-10
-100
VDS - Drain to Source Voltage - V
1000
100
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
Rth(ch-A) = 83.3ºC/W
10
1
0.1
0.01
100 μ
Rth(ch-C) = 2.4ºC/W
Rth(ch-A) : Mounted on glass epoxy board of
25.4 mm x 25.4 mm x 0.8 mmt
Single pulse
1m
10 m
100 m
1
10
PW - Pulse Width - s
100 1000
-120
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
-100
-80
VGS = –10 V
-60
-40 –4.5 V
-20
-0
-0
Pulsed
-0.2 -0.4 -0.6 -0.8 -1
VDS - Drain to Source Voltage – V
FORWARD TRANSFER CHARACTERISTICS
-100
-10
-1
TA = 150°C
75°C
25°C
–55°C
-0.1
-0.01
VDS = –10 V
Pulsed
-0.001
-0 -1 -2 -3 -4
VGS - Gate to Source Voltage - V
R07DS0763EJ0102 Rev1.02
May. 28, 2013
Page 3 of 6
Free Datasheet http://www.datasheet4u.com/


3Pages


UPA2813T1L 電子部品, 半導体
μPA2813T1L
Package Drawings (Unit: mm)
8-pin HVSON (3333)
Chapter Title
1
2
8
7
36
5
4
3.3±0.15
3.0±0.1
0.10 S
0.2 0.35
1, 2, 3 : Source
4 : Gate
5, 6, 7, 8: Drain
0.4±0.1
0.4±0.1
1.75±0.1
RENESAS Package code : PVSN0008JD-A
Equivalent Circuit
Gate
Drain
Body
Diode
Source
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and
ultimately degrade the device operation. Steps must be taken to stop generation of static
electricity as much as possible, and quickly dissipate it once, when it has occurred.
R07DS0763EJ0102 Rev1.02
May. 28, 2013
Page 6 of 6
Free Datasheet http://www.datasheet4u.com/

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
UPA2813T1L

P-channel MOSFEF

Renesas
Renesas


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