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UPA2813T1LのメーカーはRenesasです、この部品の機能は「P-channel MOSFEF」です。 |
部品番号 | UPA2813T1L |
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部品説明 | P-channel MOSFEF | ||
メーカ | Renesas | ||
ロゴ | |||
このページの下部にプレビューとUPA2813T1Lダウンロード(pdfファイル)リンクがあります。 Total 7 pages
μPA2813T1L
P-channel MOSFET
–30 V, –27 A, 6.2 mΩ
Data Sheet
R07DS0763EJ0102
Rev.1.02
May. 28, 2013
Description
The μPA2813T1L is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management
applications of portable equipment.
Features
• VDSS = −30 V (TA = 25°C)
• Low on-state resistance
⎯ RDS(on) = 6.2 mΩ MAX. (VGS = −10 V, ID = −27 A)
• 4.5 V Gate-drive available
• Small & thin type surface mount package with heat spreader
• Pb-free and Halogen free
8-pin HVSON(3333)
Ordering Information
Part No.
Lead Plating
Packing
Package
μPA2813T1L-E2-AT ∗1
Pure Sn
Tape 3000 p/reel
8-pin HVSON (3333)
typ. 0.028 g
Note: ∗1. Pb-free (This product does not contain Pb in external electrode and other parts.)
Absolute Maximum Ratings (TA = 25°C)
Item
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) ∗1
Total Power Dissipation ∗2
Total Power Dissipation (PW = 10 sec) ∗2
Total Power Dissipation (TC = 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current ∗3
Single Avalanche Energy ∗3
Symbol
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
PT2
PT3
Tch
Tstg
IAS
EAS
Ratings
−30
m20
m27
m108
1.5
3.8
52
150
−55 to +150
23
54
Unit
V
V
A
A
W
W
W
°C
°C
A
mJ
Thermal Resistance
Channel to Ambient Thermal Resistance ∗2
Channel to Case (Drain) Thermal Resistance
Rth(ch-A)
Rth(ch-C)
83.3
2.4
°C/W
°C/W
Notes: ∗1. PW ≤ 10 μs, Duty Cycle ≤ 1%
∗2. Mounted on a glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt
∗3. Starting Tch = 25°C, VDD = −15 V, RG = 25 Ω, VGS = −20 → 0 V, L = 100 μH
R07DS0763EJ0102 Rev.1.02
May. 28, 2013
Page 1 of 6
Free Datasheet http://www.datasheet4u.com/
1 Page μPA2813T1L
Chapter Title
Typical Characteristics (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
140
120
100
80
60
40
20
0
0 25 50 75 100 125 150 175
TA - Ambient Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
-1000
-100
ID(pulse) = –108 A
ID(DC) = –27A
100 ms
10 ms
PW = 200 μs
1 ms
-10
-1
R DS(on)=Lim–i1te0d V)
(VGS
Power Dissipation Limited
-0.1
Single Pulse
TA = 25ºC
Mounted on a glass epoxy board of
25.4 mm x 25.4 mm x 0.8 mmt
-0.01
-0.01
-0.1
-1
-10
-100
VDS - Drain to Source Voltage - V
1000
100
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
Rth(ch-A) = 83.3ºC/W
10
1
0.1
0.01
100 μ
Rth(ch-C) = 2.4ºC/W
Rth(ch-A) : Mounted on glass epoxy board of
25.4 mm x 25.4 mm x 0.8 mmt
Single pulse
1m
10 m
100 m
1
10
PW - Pulse Width - s
100 1000
-120
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
-100
-80
VGS = –10 V
-60
-40 –4.5 V
-20
-0
-0
Pulsed
-0.2 -0.4 -0.6 -0.8 -1
VDS - Drain to Source Voltage – V
FORWARD TRANSFER CHARACTERISTICS
-100
-10
-1
TA = 150°C
75°C
25°C
–55°C
-0.1
-0.01
VDS = –10 V
Pulsed
-0.001
-0 -1 -2 -3 -4
VGS - Gate to Source Voltage - V
R07DS0763EJ0102 Rev1.02
May. 28, 2013
Page 3 of 6
Free Datasheet http://www.datasheet4u.com/
3Pages μPA2813T1L
Package Drawings (Unit: mm)
8-pin HVSON (3333)
Chapter Title
1
2
8
7
36
5
4
3.3±0.15
3.0±0.1
0.10 S
0.2 0.35
1, 2, 3 : Source
4 : Gate
5, 6, 7, 8: Drain
0.4±0.1
0.4±0.1
1.75±0.1
RENESAS Package code : PVSN0008JD-A
Equivalent Circuit
Gate
Drain
Body
Diode
Source
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and
ultimately degrade the device operation. Steps must be taken to stop generation of static
electricity as much as possible, and quickly dissipate it once, when it has occurred.
R07DS0763EJ0102 Rev1.02
May. 28, 2013
Page 6 of 6
Free Datasheet http://www.datasheet4u.com/
6 Page | |||
ページ | 合計 : 7 ページ | ||
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PDF ダウンロード | [ UPA2813T1L データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
UPA2813T1L | P-channel MOSFEF | Renesas |