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UPA2811T1LのメーカーはRenesasです、この部品の機能は「MOS FIELD EFFECT TRANSISTOR」です。 |
部品番号 | UPA2811T1L |
| |
部品説明 | MOS FIELD EFFECT TRANSISTOR | ||
メーカ | Renesas | ||
ロゴ | |||
このページの下部にプレビューとUPA2811T1Lダウンロード(pdfファイル)リンクがあります。 Total 8 pages
μ PA2811T1L
MOS FIELD EFFECT TRANSISTOR
Preliminary Data Sheet
R07DS0191EJ0100
Rev.1.00
Jan 11, 2011
Description
The μ PA2811T1L is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management
applications of portable equipment.
Features
• VDSS −30 V (TA = 25°C)
• Low on-state resistance
⎯ RDS(on) = 15 mΩ MAX. (VGS = −10 V, ID = −19 A)
• 4.5 V Gate-drive available
• Built-in gate protection diode
• Small & thin type surface mount package with heat spreader (8-pin HVSON)
• Halogen free and RoHS compliant
Ordering Information
Part No.
LEAD PLATING
PACKING
μ PA2811T1L-E1-AY ∗1
μ PA2811T1L-E2-AY ∗1
Pure Sn
Tape 3000 p/reel
Note: ∗1. Pb-free (This product does not contain Pb in external electrode.)
Package
8-pin HVSON (3333)
typ. 0.028 g
Absolute Maximum Ratings (TA = 25°C)
Item
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) ∗1
Total Power Dissipation ∗2
Total Power Dissipation (PW = 10 sec) ∗2
Total Power Dissipation (TC = 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current ∗3
Single Avalanche Energy ∗3
Symbol
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
PT2
PT3
Tch
Tstg
IAS
EAS
Ratings
−30
m25
m19
m76
1.5
3.8
52
150
−55 to +150
−19
36
Unit
V
V
A
A
W
W
W
°C
°C
A
mJ
Thermal Resistance
Channel to Ambient Thermal Resistance ∗2
Rth(ch-A)
Channel to Case (Drain) Thermal Resistance Rth(ch-C)
83.3
2.4
°C/W
°C/W
Notes: ∗1. PW ≤ 10 μs, Duty Cycle ≤ 1%
∗2. Mounted on a glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt
∗3. Starting Tch = 25°C, VDD = −15 V, RG = 25 Ω, VGS = −20 → 0 V, L = 100 μH
R07DS0191EJ0100 Rev.1.00
Jan 11, 2011
Page 1 of 6
Free Datasheet http://www.datasheet4u.com/
1 Page Typical Characteristics (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS SAFE
OPERATING AREA
120
100
80
60
40
20
0
0 25 50 75 100 125 150 175
TC - Case Temperature - °C
Chapter Title
FORWARD BIAS SAFE OPERATING AREA
-1000
-100
ID(pulse) = −76 A
1 ms PW = 200 μs 100 μs
-10
-1
ID(DC) = −19 A
RD(SV(oGn)SL=im−1iti 0edV)
100 ms
Power Dissipation Limited
-0.1
TC = 25°C
Single Pulse
-0.1
-1
-10 -100
VDS - Drain to Source Voltage - V
1000
100
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
Rth(ch-A) = 83.3°C/W
10
Rth(ch-C) = 2.4°C/W
1
0.1
Single Pulse
Rth(ch-A): Mounted on a glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt
0.01
100 μ
1m
10 m
100 m
1
PW - Pulse Width - s
10 100
1000
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
-100
Pulsed
-90
-80
-70
VGS = −10 V
-60
-50
-40
-30
-20
-10
0
0 -0.5 -1
−4.5 V
-1.5 -2
-2.5
VDS - Drain to Source Voltage - V
FORWARD TRANSFER CHARACTERISTICS
-100
-10
-1
-0.1
-0.01
Tch = −55°C
−25°C
25°C
75°C
125°C
150°C
-0.001
-0.0001
VDS = -10 V
Pulsed
0 -0.5 -1 -1.5 -2 -2.5 -3 -3.5 -4 -4.5
VGS - Gate to Source Voltage - V
R07DS0191EJ0100 Rev.1.00
Jan 11, 2011
Page 3 of 6
Free Datasheet http://www.datasheet4u.com/
3Pages Package Drawings (Unit: mm)
8-pin HVSON (3333)
Chapter Title
1
2
8
7
36
5
4
3.3±0.15
3.0±0.1
0.10 S
0.35
0.2
1, 2, 3 : Source
4 : Gate
5, 6, 7, 8: Drain
0.4±0.1
0.4±0.1
1.75±0.1
Equivalent Circuit
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Remark The diode connected between the gate and source of the transistor serves as a protector against
ESD. When this device actually used, an additional protection circuit is externally required if a
voltage exceeding the rated voltage may be applied to this device.
R07DS0191EJ0100 Rev.1.00
Jan 11, 2011
Page 6 of 6
Free Datasheet http://www.datasheet4u.com/
6 Page | |||
ページ | 合計 : 8 ページ | ||
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部品番号 | 部品説明 | メーカ |
UPA2811T1L | MOS FIELD EFFECT TRANSISTOR | Renesas |