|
|
UPA2766T1AのメーカーはRenesasです、この部品の機能は「N-channel MOSFET」です。 |
部品番号 | UPA2766T1A |
| |
部品説明 | N-channel MOSFET | ||
メーカ | Renesas | ||
ロゴ | |||
このページの下部にプレビューとUPA2766T1Aダウンロード(pdfファイル)リンクがあります。 Total 7 pages
Data Sheet
μPA2766T1A
N-channel MOSFET
30 V , 130 A , 0.88 mΩ
R07DS0883EJ0102
Rev.1.02
Nov 28, 2012
Description
The μ PA2766T1A is N-channel MOS Field Effect Transistor designed for high current switching application.
Features
• VDSS = 30 V (TA = 25°C)
• Low on-state resistance
⎯ RDS(on) = 0.88 mΩ MAX. (VGS = 10 V, ID = 46 A)
⎯ RDS(on) = 1.82 mΩ MAX. (VGS = 4.5 V, ID = 39 A)
• 4.5 V Gate-drive available
• Thin type surface mount package with heat spreader
• Halogen free
8-pin HVSON(6051)
Ordering Information
Part No.
μ PA2766T1A-E2-AY∗1
LEAD PLATING
PACKING
Pure Sn
Tape 3000 p/reel
Note: ∗1. Pb-free (This product does not contain Pb in external electrode.)
Package
8-pin HVSON(6051)
0.1 g TYP.
Absolute Maximum Ratings (TA = 25°C)
Item
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) ∗1
Total Power Dissipation ∗2
Total Power Dissipation (PW = 10 sec) ∗2
Total Power Dissipation (TC = 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current ∗3
Single Avalanche Energy ∗3
Symbol
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
PT2
PT3
Tch
Tstg
IAS
EAS
Ratings
30
±20
±130
±312
1.5
4.6
83
150
−55 to +150
55
303
Unit
V
V
A
A
W
W
W
°C
°C
A
mJ
Thermal Resistance
Channel to Ambient Thermal Resistance ∗2
Channel to Case(Drain) Thermal Resistance
Rth(ch-A)
Rth(ch-C)
83.3
1.5
°C/W
°C/W
Notes: ∗1. PW ≤ 10 μs, Duty Cycle ≤ 1%
∗2. Mounted on a glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt
∗3. Starting Tch = 25°C, VDD = 15 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 μH
R07DS0883EJ0102 Rev.1.02
Nov 28, 2012
Page 1 of 6
Free Datasheet http://www.datasheet4u.com/
1 Page μPA2766T1A
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS SAFE
OPERATING AREA
140
120
100
80
60
40
20
0
0 25 50 75 100 125 150 175
TC - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
1000
100
10
1
ID(pulse)=312A
RDVSG(So=n)1L0iVmited
100ms10ms 1mPsW=200us
Power Dissipation Limited
0.1
0.01
Tc=25°C
Single Pulse
0.01 0.1
1
10 100
VDS - Drain to Source Voltage – V
1000
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
Single pulse
100 Rth(ch-A) = 83.3 °C/W
10
Rth(ch-C) = 1.5 °C/W
1
0.1
0.01
100 μ
Rth(ch-A) : Mounted on a glass expoxy board of 25.4mm x 25.4mm 0.8mmt
1m
10 m
100 m
1
10 100
PW - Pulse Width - s
1000
DRAIN CURRENT(DC) vs. CASE TEMPERATURE
150
125
100
75
50
25
0
0 25 50 75 100 125 150 175
TC - Case Temperature - °C
DRAIN CURRENT vs. DRAIN TO SOURCE
VOLTAGE
350
300
VGS=10V
250
VGS=4.5V
200
150
100
50
0
0
Pulsed
0.1 0.2 0.3 0.4 0.5 0.6 0.7
VDS - Drain to Source Voltage - V
R07DS0883EJ0102 Rev.1.02
Nov 28 2012
Page 3 of 6
Free Datasheet http://www.datasheet4u.com/
3Pages μPA2766T1A
Package Drawings (Unit: mm)
8pin-HVSON(6051)
1
2
3
4
8
7
6
5
6 ±0.2
5.4 ±0.2
0.10 S
Equivalent Circuit
1
0.2
1, 2, 3 : Source
4 : Gate
5, 6, 7, 8: Drain
3.65 ±0.2
0.6 ±0.15
0.7 ±0.15
RENESAS Package code : PVSN0008DA-A
Gate
Drain
Body
Diode
Source
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and
ultimately degrade the device operation. Steps must be taken to stop generation of static
electricity as much as possible, and quickly dissipate it once, when it has occurred.
R07DS0883EJ0102 Rev.1.02
Nov 28 2012
Page 6 of 6
Free Datasheet http://www.datasheet4u.com/
6 Page | |||
ページ | 合計 : 7 ページ | ||
|
PDF ダウンロード | [ UPA2766T1A データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
UPA2766T1A | N-channel MOSFET | Renesas |