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PDF UPA2764T1A Data sheet ( Hoja de datos )
| Número de pieza | UPA2764T1A | |
| Descripción | N-channel MOSFET | |
| Fabricantes | Renesas | |
| Logotipo |  |
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Data Sheet
μPA2764T1A
N-channel MOSFET
30 V , 130 A , 1.10 mΩ
R07DS0881EJ0102
Rev.1.02
Nov 28, 2012
Description
The μ PA2764T1A is N-channel MOS Field Effect Transistor designed for high current switching application.
Features
• VDSS = 30 V (TA = 25°C)
• Low on-state resistance
⎯ RDS(on) = 1.10 mΩ MAX. (VGS = 10 V, ID = 46 A)
⎯ RDS(on) = 2.45 mΩ MAX. (VGS = 4.5 V, ID = 35 A)
• 4.5 V Gate-drive available
• Thin type surface mount package with heat spreader
• Halogen free
8-pin HVSON(6051)
Ordering Information
Part No.
μ PA2764T1A-E2-AY∗1
LEAD PLATING
PACKING
Pure Sn
Tape 3000 p/reel
Note: ∗1. Pb-free (This product does not contain Pb in external electrode.)
Package
8-pin HVSON(6051)
0.1 g TYP.
Absolute Maximum Ratings (TA = 25°C)
Item
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) ∗1
Total Power Dissipation ∗2
Total Power Dissipation (PW = 10 sec) ∗2
Total Power Dissipation (TC = 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current ∗3
Single Avalanche Energy ∗3
Symbol
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
PT2
PT3
Tch
Tstg
IAS
EAS
Ratings
30
±20
±130
±280
1.5
4.6
83
150
−55 to +150
50
250
Unit
V
V
A
A
W
W
W
°C
°C
A
mJ
Thermal Resistance
Channel to Ambient Thermal Resistance ∗2
Channel to Case(Drain) Thermal Resistance
Rth(ch-A)
Rth(ch-C)
83.3
1.5
°C/W
°C/W
Notes: ∗1. PW ≤ 10 μs, Duty Cycle ≤ 1%
∗2. Mounted on a glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt
∗3. Starting Tch = 25°C, VDD = 15 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 μH
R07DS0881EJ0102 Rev.1.02
Nov 28, 2012
Page 1 of 6
Free Datasheet http://www.datasheet4u.com/
1 page  
μPA2764T1A
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
100000
10000
Ciss
1000
VGS = 0V
f = 1.0MHz
100
0.1 1
Coss
Crss
10 100
VDS - Drain to Source Voltage - V
DYNAMIC INPUT CHARACTERISTICS
12
10
VDD= 6V
15V
8 24V
6
4
2
ID=70A
0
0 40 80 120 160 200 240
QG - Gate Charge - nC
10000
1000
SWITCHING CHARACTERISTICS
VDD = 15V
VGS=10V
RG=10Ω
tf
td(of f )
100 tr
td(on)
10
0.1
1 10
ID - Drain Current - A
100
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
1000
100
VGS=10V
4.5V
10
1 0V
0.1
0.01
0
Pulsed
0.4 0.8 1.2
VF(S-D) - Source to Drain Voltage - V
R07DS0881EJ0102 Rev.1.02
Nov 28, 2012
Page 5 of 6
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet UPA2764T1A.PDF ] | |
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