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UPA2763のメーカーはRenesasです、この部品の機能は「MOS FIELD EFFECT TRANSISTOR」です。 |
部品番号 | UPA2763 |
| |
部品説明 | MOS FIELD EFFECT TRANSISTOR | ||
メーカ | Renesas | ||
ロゴ | |||
このページの下部にプレビューとUPA2763ダウンロード(pdfファイル)リンクがあります。 Total 8 pages
μ PA2763
MOS FIELD EFFECT TRANSISTOR
Preliminary Data Sheet
R07DS0003EJ0100
Rev.1.00
May 31, 2010
Description
The μ PA2763 is N-channel MOS Field Effect Transistor designed for DC/DC converter and power management
applications.
Features
• Low on-state resistance
⎯ RDS(on)1 = 23.0 mΩ MAX. (VGS = 10 V, ID = 21 A)
⎯ RDS(on)2 = 28.0 mΩ MAX. (VGS = 8 V, ID = 21 A)
• Low Ciss 2100 pF TYP.
• Built-in gate protection diode
• Thin type surface mount package with heat spreader (8-pin HVSON)
• RoHS Compliant
Absolute Maximum Ratings (TA = 25°C)
Item
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) ∗1
Total Power Dissipation∗2
Total Power Dissipation (PW = 10 sec) ∗2
Total Power Dissipation (TC = 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current ∗3
Single Avalanche Energy ∗3
Symbol
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
PT2
PT3
Tch
Tstg
IAS
EAS
Ratings
100
±20
±42
±84
1.5
4.6
83
150
-55 to + 150
24.7
61.0
Unit
V
V
A
A
W
W
W
°C
°C
A
mJ
Thermal Resistance
Channel to Ambient Thermal Resistance ∗2
Rth(ch-A)
83.3
°C/W
Channel to Case (Drain) Thermal Resistance
Rth(ch-C)
1.5
°C/W
Notes: ∗1. PW ≤ 10 μ s, Duty Cycle ≤ 1%
∗2. Mounted on a glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt
∗3. Starting Tch = 25°C, VDD = 50 V, RG = 25 Ω, L = 100 μ H, VGS = 20→0 V
R07DS0003EJ0100 Rev.1.00
May 31, 2010
Page 1 of 6
Free Datasheet http://www.datasheet4u.com/
1 Page μ PA2763
Typical Characteristics (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
120
100
80
60
40
20
0
0 25 50 75 100 125 150 175
TC - Ambient Temperature - °C
Chapter Title
FORWARD BIAS SAFE OPERATING AREA
1000
100
10
1
0.1
ID(pul se) = 84 A
M ount ed on a glass epoxy board of
25.4 mm × 25.4 mm × 0.8 mmt
R
D
(
S(ON)
at V
Lim1
=
GS
1it1e0dV
ID
)
(
D
C
)
=
42
A
PW = 1100 μs
DC
Power Dissipation Lim ited
1
0.01
TC = 25°C
Single Pulse
0.1 1
10 100 1000
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
Single pulse
100
Rth(ch-A) = 83.3°C/W
10
Rth(ch-C) = 1.5°C/W
1
0.1
0.01
01.00000μ1
Rth(ch-A): Mounted on a glass epoxy board (25.4 mm × 25.4 mm × 0.8 mm)
10.m001
100.0m1
1000.1m
11
1010
110000
10100000
FORWARD TRANSFER CHARACTERISTICS
PW - Pulse Width – s
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
100 Tch = 150°C
10
125°C
75°C
1
25°C
-25°C
0.1 -55°C
4
3
2
0.01
0.001
0.0001
VDS = 10 V
Pulsed
0123456
1
0
-75
-25
25
Pulsed
VDS = 10 V
ID = 1 mA
75 125 175
VGS - Gate to Source Voltage - V
Tch - Channel Temperature - °C
R07DS0003EJ0100 Rev.1.00
May 31, 2010
Page 3 of 6
Free Datasheet http://www.datasheet4u.com/
3Pages μ PA2763
Package Drawing (Unit: mm)
1
2
3
4
8
7
6
5
6 ±0.2
5.4 ±0.2
0.10 S
Equivalent Circuit
Chapter Title
1
0.2
1, 2, 3 : Source
4 : Gate
5, 6, 7, 8: Drain
3.65 ±0.2
0.6 ±0.15
0.7 ±0.15
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding the
rated voltage may be applied to this device
Ordering Information
Part No.
Lead Plating
Packing
μ PA2763T1A-E1-AY ∗1
μ PA2763T1A-E2-AY ∗1
Pure Sn
Tape 3000 p/reel
Note: ∗1. This product does not contain Pb in the external electrode.
Package
8-pin HVSON (0.1 g TYP.)
R07DS0003EJ0100 Rev.1.00
May 31, 2010
Page 6 of 6
Free Datasheet http://www.datasheet4u.com/
6 Page | |||
ページ | 合計 : 8 ページ | ||
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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