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PDF UPA2672T1R Data sheet ( Hoja de datos )
| Número de pieza | UPA2672T1R | |
| Descripción | DUAL P-CHANNEL MOSFET | |
| Fabricantes | Renesas | |
| Logotipo |  |
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μPA2672T1R
DUAL P-CHANNEL MOSFET
–12 V, –4.0 A, 67 mΩ
Data Sheet
R07DS0834EJ0101
Rev.1.01
Apr 15, 2013
Description
The μPA2672T1R is Dual P-channel MOS Field Effect Transistors for switching application.
This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications
such as power switch of portable machine and so on.
Features
• –1.8V drive available
• Low on-state resistance
⎯ RDS (on)1 = 67 mΩ MAX. (VGS = –4.5 V, ID = –2.0 A)
⎯ RDS (on)2 = 92 mΩ MAX. (VGS = –2.5 V, ID = –2.0 A)
⎯ RDS (on)3 = 159 mΩ MAX. (VGS = –1.8 V, ID = –2.0 A)
• Built-in gate protection diode
• Lead-free and Halogen-free
6pinHUSON2020(Dual)
Ordering Information
Part Number
μPA2672T1R-E2-AX∗1
Package
6pinHUSON2020
Note: ∗1. Pb-free (This product does not contain Pb in the external electrode and other parts.)
Absolute Maximum Ratings (TA = 25°C)
Item
Symbol
Ratings
Unit
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC)
Drain Current (pulse) ∗1
Total Power Dissipation (1 unit, 5 s) ∗2
Total Power Dissipation (2 units, 5 s) ∗2
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
PT2
–12 V
m10 V
m4.0 A
m16 A
1.5 W
2.3 W
Channel Temperature
Tch 150 °C
Storage Temperature
Notes: ∗1. PW≤10 μs, Duty Cycle≤1%
TSTG
–55 to +150 °C
∗2. Mounted on glass epoxy board of 25.4mm x 25.4mm x 0.8mmt
R07DS0834EJ0101 Rev.1.01
Apr 15, 2013
Page 1 of 6
Free Datasheet http://www.datasheet4u.com/
1 page  
μPA2672T1R
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
160
Pulsed
140 VGS = –1.8 V
120 ID = –2.0 A
100
80
60
–4.5 V
40
–2.5 V
–2.0 A
20 –2.0 A
0
-50 0 50 100 150
Tch - Channel Temperature - °C
SWITCHING CHARACTERISTICS
100
td(off)
tf
10
td(on)
1
0.1
tr
1
VDD = –6 V
VGS = –4.0 V
RG = 6 Ω
10 100
ID - Drain Current - A
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
100
Pulsed
10 VGS = 0 V
1
0.1
0.01
0 0.5 1 1.5
VF(S–D) - Drain to Source Voltage - V
CAPACITANCE vs. DRAIN TO SOURCE
VOLTAGE
1000
100
Ciss
Coss
Crss
VGS = 0 V
f = 1.0 MHz
10
-0.1 -1
-10 -100
VDS – Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
-25
-20
VDS
-15
VDD = –9.6 V
–6.0 V
–3.6 V
-5
-4
VGS
-3
-10 -2
-5 -1
ID = –4.0 A
-0 -0
0123456
QG - Gate Charge - nC
R07DS0834EJ0101 Rev.1.01
Apr 15, 2013
Page 5 of 6
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet UPA2672T1R.PDF ] | |
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