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UPA2630T1R の電気的特性と機能

UPA2630T1RのメーカーはRenesasです、この部品の機能は「P-CHANNEL MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 UPA2630T1R
部品説明 P-CHANNEL MOSFET
メーカ Renesas
ロゴ Renesas ロゴ 




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UPA2630T1R Datasheet, UPA2630T1R PDF,ピン配置, 機能
μPA2630T1R
P-CHANNEL MOSFET
–12 V, –7.0 A, 28 mΩ
Data Sheet
R07DS0990EJ0100
Rev.1.00
Dec 27, 2012
Description
The μPA2630T1R is P-channel MOS Field Effect Transistors for switching application.
This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications
such as power switch of portable machine and so on.
Features
1.8V drive available
Low on-state resistance
RDS (on)1 = 28 mΩ MAX. (VGS = 4.5 V, ID = 3.5 A)
RDS (on)2 = 35 mΩ MAX. (VGS = 2.5 V, ID = 3.5 A)
RDS (on)2 = 59 mΩ MAX. (VGS = 1.8 V, ID = 3.5 A)
Built-in gate protection diode
Lead-free and Halogen-free
6pinHUSON2020
Ordering Information
Part Number
Package
μPA2630T1R-E2-AX1
6pinHUSON2020
Note: 1.Pb-free (This product does not contain Pb in the external electrode and other parts.)
Absolute Maximum Ratings (TA = 25°C)
Item
Symbol
Ratings
Unit
Drain to Source Voltage (VGS = 0 V)
VDSS
–12 V
Gate to Source Voltage (VDS = 0 V)
VGSS
m8 V
Drain Current (DC)
Drain Current (pulse) 1
Total Power Dissipation (5 s) 2
ID(DC)
ID(pulse)
PT
m7.0 A
m28 A
2.5 W
Channel Temperature
Tch 150 °C
Storage Temperature
TSTG
–55 to +150 °C
Notes: 1. PW10 μs, Duty Cycle1%
2. Mounted on glass epoxy board of 25.4mm x 25.4mm x 0.8mmt
R07DS0990EJ0100 Rev.1.00
Dec 27, 2012
Page 1 of 6
Free Datasheet http://www.datasheet4u.com/

1 Page





UPA2630T1R pdf, ピン配列
μPA2630T1R
Typical Characteristics (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS SAFE
OPERATING AREA
140
120
100
80
60
40
20
0
0 25 50 75 100 125 150 175
TA -Ambient Temperature - °C
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
3
2.5
2
1.5
1
0.5 Mounted on a glass expoxy board
of 25.4mm x 25.4mm 0.8mmt
PW=5sec
0
0 25
50
75 100 125 150 175
TA -Ambient Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
-100
ID(pulse) = -28A
-10 ID(DC) = -7A
-1 RDS((oVnG)LSi=m4it.e5dV)
1mPsW=300us
Power
5s100m1s0ms
Dissipation Limited
-0.1
TA=25ºC
Single Pulse
Mounted on glass epoxy board of
-0.01 25.4 mm x 25.4 mm x 0.8 mmt
-0.01
-0.1
-1
-10
-100
VDS - Drain to Source Voltage - V
1000
100
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
Single pulse
Rth(ch-a)=113.6ºC/W
10
1
0.1
0.01
100 μ
Rth(ch-A) : Mounted on a glass expoxy board of 25.4mm x 25.4mm 0.8mmt
1m
10 m
100 m
1
10
PW - Pulse Width - s
100
1000
R07DS0990EJ0100 Rev.1.00
Dec 27, 2012
Page 3 of 6
Free Datasheet http://www.datasheet4u.com/


3Pages


UPA2630T1R 電子部品, 半導体
μPA2630T1R
Package Drawings (Unit: mm)
6pinHUSON2020
2 ± 0.1
A
B
0.3 ± 0.05
4
1.6
1 ± 0.05
0.2
56
4
3
0.3 ± 0.05
21
0.65 ± 0.03
0.05 M S A B
0.05 S
0.65 ± 0.03
1,2,5,6 : Drain
3 : Gate
S 4 : Source
RENESAS Package code : PWSN0006JD-B
Equivalent Circuit
Drain
Gate
Body
Diode
Remark
Gate
Protection
Diode
Source
The diode connected between the gate and source of the transistor serves as a protector against
ESD. When this device actually used, an additional protection circuit is externally required if a
voltage exceeding the rated voltage may be applied to this device.
R07DS0990EJ0100 Rev.1.00
Dec 27, 2012
Page 6 of 6
Free Datasheet http://www.datasheet4u.com/

6 Page



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部品番号部品説明メーカ
UPA2630T1R

P-CHANNEL MOSFET

Renesas
Renesas


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